SANYO FTD2005 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6429
FTD2005
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Features
· Low ON resistance.
· 2.5V drive.
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : D2005 Continued on next page.
SSD
SSG
D
SG
R
SD
R
SD
WP ≤ elcycytud,sµ01 ≤ %14A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
D
Mounted on a ceramic board (1000mm
T
I
SSD)RB(
D
V
SSD
SSG
SD
V
SG
)ffo(VSDI,V01=
1)no(IDV,A1=
2)no(IDV,A5.0=
SD
SD
SD
Package Dimensions
unit:mm
2155A
[FTD2005]
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
02V
01±V
1A
sgnitaR
8.0W
0.1W
˚C
˚C
tinU
2
×0.8mm)
nimpytxam
V,Am1=
0=02V
SG
V,V02=
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
Am1=4.03.1V
D
A1=8.16.2S
D
V4=002062mΩ
SG
V5.2=062063mΩ
SG
zHM1=f,V01=09Fp
zHM1=f,V01=06Fp
zHM1=f,V01=82Fp
30300TS (KOTO) TA-2054 No.6429–1/4
FTD2005
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 1Cn
egrahC"relliM"niarD-ot-etaGdgQ 2Cn
egatloVdrawroFedoiDV
Switching Time Test Circuit Electrical Connection
VDD=10V
V
IN
4V
0V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=1A
RL=10Ω
V
OUT
)no(tiucriCtseTdeificepSeeS01sn
d
r
)ffo(tiucriCtseTdeificepSeeS02sn
d
f
V
I
DS
S
V,V01=
SD
SG
V,A1=
0=0.12.1V
SG
tiucriCtseTdeificepSeeS22sn
tiucriCtseTdeificepSeeS91sn
I,V01=
A1=
D
D2S2 S2 G2
sgnitaR
nimpytxam
6Cn
tinU
P.G
2.0
1.8
1.6
1.4
–A
D
1.2
1.0
0.8
0.6
Drain Current, I
0.4
0.2
0
0
500
450
mΩ
400
–
350
(on)
300
DS
250
200
150
100
Static Drain-to-Source
On-State Resistance, R
50
0
01234 56
50Ω
I
8.0V
6.0V
4.0V
10.0V
0.2
Drain-to-Source Voltage, VDS –V
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
RDS(on) -- V
1.0A
ID=0.5A
Gate-to-Source Voltage, VGS –V
D
S
-- V
FTD2005
DS
3.0V
2.5V
2.0V
VGS=1.5V
IT00977
GS
Ta=25°C
78910
IT00979
D1S1 S1 G1
I
-- V
2.0
1.8
1.6
1.4
–A
D
1.2
1.0
0.8
0.6
Drain Current, I
0.4
0.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
500
450
mΩ
400
–
350
(on)
300
DS
250
200
150
100
Static Drain-to-Source
On-State Resistance, R
50
0
- -60
Gate-to-Source Voltage, VGS –V
--40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
D
25°C
RDS(on) -- Ta
=0.5A, V
I
D
I
D
°C
75
Ta=--25°C
=1.0A, V
GS
GS
=2.5V
GS
=4.0V
VDS=10V
IT00978
IT00980
No.6429-2/4
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