SANYO FH102 Datasheet

FH102

Ordering number : EN5874

High-Frequency Low-Noise Amp,

Differential Amp Applications

NPN Epitaxial Planar Silicon Composite Transistor

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

51598TS (KOTO) TA-1130 No.5874-1/5

Package Dimensions

unit: mm

2149-MCP6

[FH102]

1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6

0‘0.1

0.65

2.0

1.25

0.4250.425

2.1

0.25

12

54

0.15

0.9

0.2

0.2

3

6

Specifications
Absolute Maximum Ratings

at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage V

CBO

20 V

Collector-to-Emitter Voltage V

CEO

10 V

Emitter-to-Base Voltage V

EBO

2V

Collector Current I

C

70 mA

Collector Dissipation P

C

Mounted on ceramic board 300 mW
(250mm2×0.8mm), 1unit

Total Dissipation P

T

Mounted on ceramic board 500 mW

(250mm2×0.8mm)
Junction Temperature Tj 150 °C
Storage Temperature Tstg –55 to +150 °C

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Ratings

min typ max

Unit

Collector Cutoff Current I

CBO

VCB=10V, IE=0 1.0 µA

Emitter Cutoff Current I

EBO

VEB=1V, IC=0 10 µA

DC Current Gain h

FE

VCE=5V, IC=20mA 90 200

DC Current Gain Ratio h

FE(small/large)VCE

=5V, IC=20mA 0.7 0.95

Base-to-Emitter Voltage V

BE(small-large)VCE

=5V, IC=20mA 1.0 mV
Difference
Gain-Bandwidth Product f

T

VCE=5V, IC=20mA 5 7 GHz
Output Capacitance Cob VCB=10V, f=1MHz 0.75 1.2 pF
Reverse Transfer Capacitance Cre VCB=10V, f=1MHz 0.5 pF

Continued on next page.

Features

• Composite type with 2 transistors contained in the MCP
package currently in use, improving the mounting
efficiency greatly.

• The FH102 is formed with two chips, being equivalent to
the 2SC5226, placed in one package.

• Optimal for differential amplification due to excellent
thermal equilibrium and pair capability.

FH102

No.5874-2/5

Continued from preceding page.

Parameter Symbol Conditions

Ratings

min typ max

Unit

Forward Transfer Gain S2le2(1) VCE=5V, IC=20mA, f=1GHz 9 12 dB

S2le2(2) VCE=5V, IC=3mA, f=1GHz 8 dB

Noise Figure NF VCE=5V, IC=7mA, f=1GHz 1.0 1.8 dB

Note) The specifications shown above are for each individual transistor except the hFE(small/large) and V

BE

(small-large) for which pair capability is also shown.

Marking : 102

Electrical Connection

B 1 B 2 E 2

C 1 E 1 C 2

1.0

7

100

100

7

10

1.0 10 100

5

7
5

3

2

3
2

7

1.0

0.1

10

1.0

10

5

7
5

2

3

2

7

0.1

1.0

5

7
5

3
2

3
2

7

0.1

1.0

5

7
5

3
2

3
2

7

5

3 2 2

753

2

753

7532 7532 2

10

7 7532 7532 2 3

1.0

0.1

10

7 7532 7532 2 3

VCE=5V

VCE=5V

DC Current Gain, h

FE

Output Capacitance, Cob – pF

Reverse Transfer Capacitance, Cre – pF

Collector Current,I

C

– mA Collector Current,IC – mA

Collector-to-Base Voltage, V

CB

– V Collector-to-Base Voltage, VCB – V

h

FE

– I

C

f

T

– I

C

Cob – V

CB

Cre – V

CB

f=1MHzf=1MHz

Gain-Bandwidth Product,f

T

– GHz