SANYO FC21 Datasheet
Ordering number : ENN7021
FC21
TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon Junction FET
FC21
High-Frequency Amplifier ,
AM tuner RF Amplifier Applications
Features
•
The FC21 contains both a 2SK1740 equivalent chip
and a 2SC2812 equivalent chip in the CP package,
thus realizes higher efficiency in device mounting
on the PCB.
Package Dimensions
unit : mm
2122
[FC21]
1.9
0.95 0.95
54
1
0.4
2.9
3
0.60.6
1.6
2
0.8
0.16
2.8
1 : Collector
2 : Gate
3 : Source
1.1
4 : Emitter/Drain
5 : Base
SANYO : CP5
0 to 0.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[FET]
Drain-to-Source Voltage V
Gate-to-Drain Voltage V
Gate Current I
Drain Current I
Allowable Power Dissipation P
[TR]
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current(Pulse) I
Base Current I
Collector Dissipation P
[Common Ratings]
Total Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
Marking : 1C
DSX
GDS
G
D
D
CBO
CEO
EBO
C
CP
B
C
T
40 V
--40 V
10 mA
75 mA
400 mW
55 V
50 V
6V
150 mA
300 mA
30 mA
200 mW
600 mW
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81001 TS IM TA-1526
No.7021-1/5
FC21
B S
CG
E / D
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
[FET]
Gate-to-Drain Breakdown Voltage V
Gate Cutoff Current I
Cutoff Voltage VGS(off) VDS=10V , ID=100µA --2.0 --3.0 --5.0 V
Drain Current I
Forward Transfer Admittance
Input Capacitance Ciss VDS=10V, VGS=0, f=1MHz 11 pF
Reverse Transfer Capacitance Crss VDS=10V, VGS=0, f=1MHz 2.5 pF
Noise Figure NF VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB
[TR]
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=6V, f=1MHz 3 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.1 0.5 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA 0.8 1.0 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
(BR)GDSIG
GSS
DSS
yfs
CBO
EBO
FE
T
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
=--10µA, VDS=0 --40 V
VGS=--20V, VDS=0 --1.0 nA
VDS=10V , VGS=0 40* 75* mA
VDS=10V, VGS=0, f=1kHz 22 30 mS
VCB=35V, IE=0 0.1 µA
VEB=4V, IC=0 0.1 µA
VCE=6V, IC=1mA 135 600
VCE=6V, IC=10mA 100 MHz
=10µA, IE=0 55 V
=1mA, RBE=∞ 50 V
=10µA, IC=0 6 V
Ratings
min typ max
Unit
* : The FC21 is classified by I
Rank JKL
I
DSS
The specifications shown above are for each individual FET or transistor.
80
60
40 to 52 48 to 63 57 to 75
-- mA
D
40
as follows : (unit : mA)
DSS
I
-- V
D
DS
V
GS
--0.5V
[FET]
=0
--1.0V
20
Drain Current, I
--1.5V
--2.0V
0
012345
Drain-to-Source V oltage, V
I
-- V
D
--3.0V
DS
GS
--2.5V
-- V
ITR01960 ITR01961
[FET]
VDS=10V
100
80
Electrical Connection
I
-- V
I
D
D
-- V
80
60
-- mA
D
40
20
Drain Current, I
0
048 2012 16
Drain-to-Source V oltage, V
DS
GS
--3.0V
DS
V
-- V
VDS=10V
I
=60mA
DSS
[FET]
GS
--0.5V
--1.0V
--1.5V
--2.0V
--2.5V
[FET]
=0
100
80
--6 --4--5 --3 --2 --1 0
Gate-to-Source V oltage, V
DSS
I
GS
=75mA
55mA
-- V
40mA
ITR01963
-- mA
60
D
40
Drain Current, I
20
0
25°C
75°C
Ta= --25°C
--6 --5 --4 --3 --2 --1 0
Gate-to-Source V oltage, V
GS
-- V
ITR01964
No.7021-2/5
-- mA
60
D
40
Drain Current, I
20
0
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