SANYO FC18 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR:NPN Epitaxial Planar Silicon Transistor
FET:N-Channel Junction Silicon FET
High-Frequency Amp, AM Amp,
Low-Frequency Amp Applications
Ordering number:EN4983
FC18
Features
· Composed of 2 chips, one being equivalent to the
2SK2394 and the other the 2SC4639, in the
convertional CP package, improving the mounting
efficiency greatly.
· Drain and emitter are shared.
Electrical Connection
Package Dimensions
unit:mm
2122
[FC18]
1:Collector
2:Gate
3:Source
4:Emitter/Drain
5:Base
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]TEF[
egatloVecruoS-ot-niarDV
egatloVniarD-ot-etaGV
tnerruCetaGI
tnerruCniarDI
noitapissiDrewoPelbawollA
]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
]sgnitaRnommoC[
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
· Marking:18
G
D
P
D
C
PC
B
C
T
SANYO:XP5
XSD
SDG
OBC
OEC
OBE
Continued on next page.
51V
51–V
01Am
05Am
002Wm
55V
05V
6V
051Am
003Am
03Am
002Wm
003Wm
˚C
˚C
52098HA (KT)/42695MO(KOTO) BX-1576 No.4983-1/5
FC18
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]TEF[
egatloVnwodkaerBD-GV
tnerruCffotuCetaGI
egatloVffotuCV
tnerruCniarDI
ecnattimdArefsnarTdrawroFY|sf|VSDV,V5=
ecnaticapaCtupnIssiCVSDV,V5=
ecnaticapaCrefsnarTesreveRssrCVSDV,V5=
erugiFesioNFNVSDk1=gR,V5= ,Ω I
]RT[
tnerruCffottuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSgtsttiucriCtseTdeificepseeS57.0sµ
emiTllaFt
Note*:The FC18 is classified by I
021F0.60.02G0.010.23H0.61
as follows : (unit:mA)
DSS
I
SDG)RB(
G
V
SSG
V
)ffo(SG
V
SSD
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
f
V,Aµ01–=
0=51–V
SD
V,V01–=
SG
SD
SD
BC
BE
EC
EC
BC
0=0.1–An
SD
I,V5=
Aµ001=3.0–7.0–5.1–V
D
V,V5=
0=*0.6*0.23Am
SG
SG
SG
SG
I,V53=
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
I,V6=
C
I,V6=
C
I,Am05=
B
I,Am05=
B
I,Aµ01=
0=55V
E
R,Am1=
=∞ 05V
EB
I,Aµ01=
0=6V
C
zHk1=f,0=0283Sm
zHM1=f,0=0.01Fp
zHM1=f,0=9.2Fp
D
Am1=531004
Am01=002zHM
zHM1=f,V6=7.1Fp
Am5=80.04.0V
Am5=8.00.1V
tiucriCtseTdeificepseeS51.0sµ
tiucriCtseTdeificepseeS02.0sµ
sgnitaR
nimpytxam
zHk1=f,Am1=0.1Bd
tinU
Marking:18
I
rank:F, G, H
DSS
The specifications shown above are for each individual FET or transistor.
Switching Time T est CIrcuit
No.4983-2/5
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