SANYO FC155 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

PNP Epitaxial Planar Silicon Transistor (With bias resistances)

PNP Epitaxail Planar Silicon Transistor

Constant-Current Circuit Applications

Ordering number:EN5063

FC155

Features

· Complex type of 2 devices (transistor with resis­tances and low saturation transistor) contained in one
package, facilitating high-density mounting.

Electrical Connection

1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

]1RT[

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

tnerruCesaBI

noitapissiDrotcelloCP

noitapissiDlatoTP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

]2RT[

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

tnerruCesaBI

noitapissiDrotcelloCP

noitapissiDlatoTP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

PC

B

C
T

OBC
OEC
OBE

C

PC

B

C
T

Package Dimensions

unit:mm

2104A

[FC155]

1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1

SANYO:CP6

02–V
51–V
5–V
005–Am
1–A
5–Am

tinu1 002Wm

003Wm

˚C
˚C

02–V
51–V
5–V
005–Am
1–A
001–Am

tinu1 002Wm

003Wm

˚C
˚C

52098HA (KT)/31495MO (KOTO) TA-0178 No.5063-1/4

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnotidnoC

]1RT[

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCDh

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOboCV

egatloVnoitarutaSE-CV

egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV

egatloVetatS-FFO-tupnIV

egatloVetatS-NO-tupnIV

ecnatsiseRtupnI1R3.37.41.6V

oitaRecnatsiseR2R/1R 74.0kΩ

]2RT[

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOboCV

egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV

egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV

hEF)1(VECI,V2–=
hEF)2(VECI,V2–=

FC155

sgnitaR

nimpytxam

V

OBC

V

OBE

V

EF

V

T

I

)tas(EC

C

I

OBC)RB(

C

I

OEC)RB(

C

V

)ffo(I

V

)no(I

V

OBC

V

OBE

V

T

I

)tas(EC

C

I

)tas(EB

C

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

C

I,V51–=

BC
BE
EC
EC
EC

EC
EC

BC
BE

EC
EC

0=1.0–Aµ

E

I,V4–=

0=012–072–093–Aµ

C

I,V2–=

C

I,V2–=

C

I,Aµ01–=

E

R,Am1–=

I,V5–=

C

I,V4–=

C
C
C

I,V2–=

C

I,Aµ01–=

E

R,Am1–=

I,Aµ01–=

C

Am001–=001

Am05–=051zHM

zHM1=f,V01–=5Fp

I,Am001–=

Am5–=001–052–Vm

B

0=02–V

=∞ 51–V

BΕ

Aµ001–=7.0–08.0–59.0–V

I,V2.0–=

Am01–=58.0–2.1–8.1–V

C

I,V51–=

0=1.0–Aµ

E

0=1.0–Aµ

Am01–=061065

Am004–=07zHM

Am05–=004Fp

zHM1=f,V01–=5.6Vm

I,Am002–=

Am01–=002–063–V

B

I,Am002–=

Am01–=59.0–2.1–V

B

0=02–V

=∞ 51–V

BΕ

0= 5–V

tinU

No.5063-2/4