SANYO FC155 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Transistor (With bias resistances)
PNP Epitaxail Planar Silicon Transistor
Constant-Current Circuit Applications
Ordering number:EN5063
FC155
Features
· Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one
package, facilitating high-density mounting.
Electrical Connection
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]1RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
]2RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
C
T
OBC
OEC
OBE
C
PC
B
C
T
Package Dimensions
unit:mm
2104A
[FC155]
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
SANYO:CP6
02–V
51–V
5–V
005–Am
1–A
5–Am
tinu1 002Wm
003Wm
˚C
˚C
02–V
51–V
5–V
005–Am
1–A
001–Am
tinu1 002Wm
003Wm
˚C
˚C
52098HA (KT)/31495MO (KOTO) TA-0178 No.5063-1/4
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
]1RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVetatS-FFO-tupnIV
egatloVetatS-NO-tupnIV
ecnatsiseRtupnI1R3.37.41.6V
oitaRecnatsiseR2R/1R 74.0kΩ
]2RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
hEF)1(VECI,V2–=
hEF)2(VECI,V2–=
FC155
sgnitaR
nimpytxam
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
OBC)RB(
C
I
OEC)RB(
C
V
)ffo(I
V
)no(I
V
OBC
V
OBE
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
C
I,V51–=
BC
BE
EC
EC
EC
EC
EC
BC
BE
EC
EC
0=1.0–Aµ
E
I,V4–=
0=012–072–093–Aµ
C
I,V2–=
C
I,V2–=
C
I,Aµ01–=
E
R,Am1–=
I,V5–=
C
I,V4–=
C
C
C
I,V2–=
C
I,Aµ01–=
E
R,Am1–=
I,Aµ01–=
C
Am001–=001
Am05–=051zHM
zHM1=f,V01–=5Fp
I,Am001–=
Am5–=001–052–Vm
B
0=02–V
=∞ 51–V
BΕ
Aµ001–=7.0–08.0–59.0–V
I,V2.0–=
Am01–=58.0–2.1–8.1–V
C
I,V51–=
0=1.0–Aµ
E
0=1.0–Aµ
Am01–=061065
Am004–=07zHM
Am05–=004Fp
zHM1=f,V01–=5.6Vm
I,Am002–=
Am01–=002–063–V
B
I,Am002–=
Am01–=59.0–2.1–V
B
0=02–V
=∞ 51–V
BΕ
0= 5–V
tinU
No.5063-2/4
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