SANYO FC154 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN/PNP Epitaxial Planar Silicon Transistor
High-Speed Switching,
High-Frequency Amp Applications
Ordering number:EN5099
FC154
Features
· Composite type with NPN transistor and a PNP
transistor contained in the conventional CP package,
improving the mounting efficiency greatly.
· The FC154 is formed with two chips, being equivalent to the 2SC4270 and the other the 2SA1699,
placed in one package.
Electrical Connection
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
])rTNPN(1RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
])rTPNP(2RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
]sgnitaRnommoC[
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Marking:154
OBC
OEC
OBE
C
C
OBC
OEC
OBE
C
C
T
Package Dimensions
unit:mm
2104A
[FC154]
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
SANYO:CP6
52V
51V
3V
05Am
002Wm
02–V
51–V
3–V
05–Am
002Wm
003Wm
˚C
˚C
Continued on next page.
52098HA (KT)/71095MO (KOTO) TA-0144 No.5099-1/7
Continued from Preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
])rTNPN(1RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
niaGrewoPGPVECI,V01=
erugiFesioNFNVECI,V01=
])rTPNP(2RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
niaGrefsnarTdrawroFV
erugiFesioNFNVECI,V01–=
| S2le |
PG, NF Test Circuit
FC154
sgnitaR
nimpytxam
V
OBC
V
OBE
V
EF
V
T
V
OBC
V
OBE
V
EF
V
T
2
I,V02=
BC
BE
EC
EC
BC
BC
BE
EC
EC
BC
EC
0=1.0Aµ
E
I,V2=
0=01Aµ
C
I,V01=
Am5=06002
C
I,V01=
Am01=5.10.3zHG
C
zHM1=f,V01=7.00.1Fp
C
C
I,V51–=
0=1.0–Aµ
E
I,V2–=
0=1.0–Aµ
C
I,V01–=
Am5–=02001
C
I,V01–=
Am5–=5.10.3zHG
C
zHM1=f,V01–=0.15.1Fp
I,V01–=
C
C
zHG9.0=f,Am01=21Bd
zHG9.0=f,Am3=0.3Bd
zHG9.0=f,Am5–=5Bd
zHG9.0=f,Am3–=0.2Bd
tinU
No.5099-2/7
FC154
No.5099-3/7
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