SANYO FC152 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Composite Transistor
High-Frequency Amp, Differential Amp
Applications
Ordering number:EN4653
FC152
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC152 is formed with two chips, being equiva-
Package Dimensions
unit:mm
2104A
[FC152]
lent to the 2SC4270, placed in one package.
· Excellent in thermal equilibrium, pair capability and
especially suited for differerntial amp.
1:Emitter 1
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
6:Collector 1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
C
T
tinu1 002Wm
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
oitaRniaGtnerruCCDh
ecnereffiDegatloVE-BV
tcudorPhtdiwdanB-niaGf
ecnaticapaCtuptuOboCV
niaGrewoPGPVECI,V01=
erugiFesioNFNVECI,V01=
V
OBC
V
OBE
V
EF
V
/llams(EF
)egral
V
-egral(EB
)llams
V
T
I,V02=
BC
BE
EC
EC
EC
EC
BC
0=1.0Aµ
E
I,V2=
0=01Aµ
C
I,V01=
Am5=06002
C
I,V01=
Am5=7.059.0
C
I,V01=
0=0.301Vm
C
I,V01=
Am01=5.10.3zHG
C
zHM1=f,V01=7.00.1Fp
C
C
zHG9.0=f,Am01=21Bd
zHG9.0=f,Am3=0.3Bd
nimpytxam
Note:The specifications shown above are for each individual transistor. However, the specifications of hFE(small/large)
and VBE(large-small) are for pair capability
Marking:152
sgnitaR
52V
51V
3V
05Am
003Wm
˚C
˚C
tinU
52098HA (KT)/41594TH (KOTO) X-7851 No.4653-1/4
FC152
No.4653-2/4
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