SANYO FC151 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Composite Transistor
High-Frequency Amp, Current Mirror
Circuit Applications
Ordering number:EN4652
FC151
Features
· Composite type with 2 transistors contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC151 is formed with two chips, being equivalent to the 2SA1669, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
Package Dimensions
unit:mm
2103A
[FC151]
1:Emitter 1
2:Base 1
3:Emitter 2
4:Collector 2
5:Base 2
6:Collector1
1:Emitter 1
2:Base 1
3:Emitter 2
4:Collector 2
5:Base 2
6:Collector1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
C
T
tinu1 002Wm
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
oitaRniaGtnerruCCDh
ecnereffiDegatloVE-BV
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
niaGrefsnarTdrawroF|e12S|VECI,V01–=
erugiFesioNFNVECI,V01–=
EF
EB
V
OBC
V
OBE
V
EF
/llams(
V
)egral
-egral(
V
)llams
V
T
I,V51–=
BC
BE
EC
EC
EC
EC
BC
0=1.0–Aµ
E
I,V2–=
0=1.0–Aµ
E
I,V01–=
Am5–=02001
C
I,V01–=
Am5–=7.039.0
C
I,V01–=
Am5–=0.351Vm
C
I,V01–=
Am5–=5.10.3zHG
C
zHM1=f,V01–=0.15.1Fp
C
C
zHG9.0=f,Am5–=5Bd
zHG9.0=f,Am3–=0.2Bd
nimpytxam
Note:The specifications shown above are for each individual transistor. However, the specifications of hFE(small/large)
and hFE(large-small) are for pair capability
Marking:151
02–V
51–V
3–V
05–Am
003Wm
˚C
˚C
sgnitaR
tinU
52098HA (KT)/41594TH(KOTO) X-7850 No.4652-1/5
FC151
No.4652-2/5
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