SANYO FC150 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP/NPN Epitaxial Planar Silicon Composite Transistor
Low-Frequency General-Purpose Amp,
Driver Applications
Ordering number:EN3965
FC150
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC150 is formed with two chips, being equivalent to the 2SA1813/2SC4413, placed in one package.
· Adoption of FBET process.
· High DC current gain.
· Hgih V
Electrical Connection
EBO
Package Dimensions
unit:mm
2067
[FC150]
.
E1:Emitter 1
B1:Base 1
C2:Collector 2
E2:Emitter 2
B2:Base 2
C1:Collector 1
TR1=PNP
TR2=NPN
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
Note:The specifications shown above are for each individual transistor.
( ):PNP
Marking:150
OBC
OEC
OBE
C
PC
B
C
T
OBC
OBE
EF
T
tinu1 002Wm
V
BC
V
BE
V
EC
V
EC
BC
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
C
I,V04)V02–(=
0=1.0–Aµ
E
I,V01)–(=
0=1.0–Aµ
C
I,V5)–(=
Am1)–(=008)005(0051)008(0023)0021(
C
I,V01)–(=
C
I,Am05)–(=
B
I,Am05)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
=0 51)–(V
C
Am01)–(=002)012(zHM
zHM1=f,V01)–(=5.1)6.2(Fp
Am1)–(=1.0)51.0–(3.0)–(V
Am1)–(=8.0)87.0–(1.1)–(V
0=06)03–(V
=∞ 05)52–(V
EB
SANYO:CP6
sgnitaR
nimpytxam
06)03–(V
05)52–(V
51)–(V
001)051–(Am
002)003–(Am
02)03–(Am
003Wm
˚C
˚C
tinU
52098HA (KT)/12094TH (KOTO) 8-7600 No.3965-1/4
FC150
No.3965-2/4
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