SANYO EFC4606 Technical data

Ordering number : ENA1177
EFC4606
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
EFC4606
General-Purpose Switching Device Applications
Features
2.5V drive.
Best suited for LiB charging and discharging switch.
Common-drain type.
Specifications
Absolute Maximum Ratings at T a=25°C
Source-to-Source Voltage V
Gate-to-Source Voltage V
Source Current (DC) I
Source Current (Pulse) I
Total Dissipation P
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
SSS
GSS
S
SP
T
PW100μs, duty cycle1% 60 A
When mounted on ceramic substrate (5000mm2✕0.8mm)
Electrical Characteristics at Ta=25 °C
Parameter Symbol Conditions
Source-to-Source Breakdown Voltage V
Zero-Gate Voltage Source Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VSS=10V, IS=1mA Test Circuit 3 0.5 1.3 V
Forward Transfer Admittance
Static Source-to-Source On-State Resistance
Marking : FF Continued on next page.
(BR)SSSIS
SSS
GSS
yfs
RSS(on)1 IS=3A, VGS=4.5V Test Circuit 5 22 30 38 mΩ
RSS(on)2 IS=3A, VGS=4.0V Test Circuit 5 23 32 41 mΩ
RSS(on)3 IS=1.5A, VGS=3.1V Test Circuit 5 26 35 45 mΩ
RSS(on)4 IS=1.5A, VGS=2.5V Test Circuit 5 30.5 41 57.5 mΩ
=1mA, VGS=0V Test Circuit 1 24 V
VSS=20V, VGS=0V Test Circuit 1 1 μA
VGS=±8V, VSS=0V Test Circuit 2 ±10 μA
VSS=10V, IS=3A Test Circuit 4 5.3 8.9 S
min typ max
Ratings
24 V
±12 V
6A
1.6 W
Unit
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the
'
customer device, the customer should always evaluate and test devices mounted in the customer equipment.
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
'
s products or
www.semiconductor-sanyo.com/network
92408PF TI IM TC-00001623
No. A1177-1/6
EFC4606
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VSS=10V, f=1MHz Test Circuit 8 1050 pF
Output Capacitance Coss VSS=10V, f=1MHz Test Circuit 8 170 pF
Reverse Transfer Capacitance Crss VSS=10V, f=1MHz Test Circuit 8 124 pF
Turn-ON Delay Time td(on) See specified Test Circuit. Test Circuit 7 22 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. Test Circuit 7 205 ns
Fall Time t
Total Gate Charge Qg VSS=10V, VGS=4.5V, IS=6A 13 nC
Forward Source-to-Source Voltage V
F(S-S)IS
See specified Test Circuit. Test Circuit 7 92 ns
r
See specified Test Circuit. Test Circuit 7 141 ns
f
=6A, VGS=0V Test Circuit 6 1 1.2 V
min typ max
Package Dimensions Electrical Connection
unit : mm (typ) 7059-001
1.81
43
2
1.81
Ratings
1
Unit
0.65
12
0.65
12
43
0.37
0.280.27
1 : Source1 2 : Gate1 3 : Gate2 4 : Source2
SANYO : EFCP1818-4CA-055-1
3
1 : Source1 2 : Gate1 3 : Gate2
4
4 : Source2
No. A1177-2/6
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