Ordering number : ENA1177
EFC4606
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
EFC4606
General-Purpose Switching Device
Applications
Features
• 2.5V drive.
• Best suited for LiB charging and discharging switch.
• Common-drain type.
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Source-to-Source Voltage V
Gate-to-Source Voltage V
Source Current (DC) I
Source Current (Pulse) I
Total Dissipation P
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
SSS
GSS
S
SP
T
PW≤100μs, duty cycle≤1% 60 A
When mounted on ceramic substrate (5000mm2✕0.8mm)
Electrical Characteristics at Ta=25 °C
Parameter Symbol Conditions
Source-to-Source Breakdown Voltage V
Zero-Gate Voltage Source Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VSS=10V, IS=1mA Test Circuit 3 0.5 1.3 V
Forward Transfer Admittance
Static Source-to-Source On-State Resistance
Marking : FF Continued on next page.
(BR)SSSIS
SSS
GSS
yfs
⏐
⏐
RSS(on)1 IS=3A, VGS=4.5V Test Circuit 5 22 30 38 mΩ
RSS(on)2 IS=3A, VGS=4.0V Test Circuit 5 23 32 41 mΩ
RSS(on)3 IS=1.5A, VGS=3.1V Test Circuit 5 26 35 45 mΩ
RSS(on)4 IS=1.5A, VGS=2.5V Test Circuit 5 30.5 41 57.5 mΩ
=1mA, VGS=0V Test Circuit 1 24 V
VSS=20V, VGS=0V Test Circuit 1 1 μA
VGS=±8V, VSS=0V Test Circuit 2 ±10 μA
VSS=10V, IS=3A Test Circuit 4 5.3 8.9 S
min typ max
Ratings
24 V
±12 V
6A
1.6 W
Unit
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
'
customer
device, the customer should always evaluate and test devices mounted in the customer
equipment.
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
'
s products or
www.semiconductor-sanyo.com/network
92408PF TI IM TC-00001623
No. A1177-1/6
EFC4606
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VSS=10V, f=1MHz Test Circuit 8 1050 pF
Output Capacitance Coss VSS=10V, f=1MHz Test Circuit 8 170 pF
Reverse Transfer Capacitance Crss VSS=10V, f=1MHz Test Circuit 8 124 pF
Turn-ON Delay Time td(on) See specified Test Circuit. Test Circuit 7 22 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. Test Circuit 7 205 ns
Fall Time t
Total Gate Charge Qg VSS=10V, VGS=4.5V, IS=6A 13 nC
Forward Source-to-Source Voltage V
F(S-S)IS
See specified Test Circuit. Test Circuit 7 92 ns
r
See specified Test Circuit. Test Circuit 7 141 ns
f
=6A, VGS=0V Test Circuit 6 1 1.2 V
min typ max
Package Dimensions Electrical Connection
unit : mm (typ)
7059-001
1.81
43
2
1.81
Ratings
1
Unit
0.65
12
0.65
12
43
0.37
0.280.27
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
SANYO : EFCP1818-4CA-055-1
3
1 : Source1
2 : Gate1
3 : Gate2
4
4 : Source2
No. A1177-2/6
EFC4606
Test Circuits are example of measuring FET1 side
Test Circuit 1
V
/ I
SSS
SSS
G2
G1
Test Circuit 3
VGS (off)
G2
G1
S2
S1
S2
10V 1mA
Test Circuit 2
I
(+) / (--)
GSS
S2
G2
G1
S1
IT11565 IT11566
Test Circuit 4
⏐yfs⏐
S2
G2
G1
Test Circuit 5
RSS (on)
G2
G1
Test Circuit 7
td (on), tr, td (off), t
V
IN
S1
S2
S1
f
VDD=10V
IT11567 IT11568
Test Circuit 6
VF (S-S)
S2
4.5V
G2
G1
S1
IT11569
IS=3A
RL=3.33Ω
V
OUT
S1
S1
IT11570
PW=10μs
D.C.≤1%
G1
G2
S2
IT11571
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
No. A1177-3/6
Test Circuit 8
Ciss
EFC4606
Coss
G2
G1
Capacitance
bridge
Crss
Capacitance
bridge
G2
G1
S2
S1
S2
IT11972
S2
G2
Capacitance
bridge
G1
S1
IT11973
6.0
5.5
5.0
4.5
-- A
4.0
S
3.5
3.0
2.5
2.0
Source Current, I
1.5
1.0
0.5
4.5V
10.0V
0
0
Source-to-Source Voltage, V
100
90
80
IS=1.5A
70
(on) -- mΩ
60
DS
50
40
30
20
Static Source-to-Source
On-State Resistance, R
10
0
0
Gate-to-Source Voltage, V
S1
I
-- V
S
3.1V
2.5V
4.0V
0.3 1.00.1 0.90.5 0.70.40.2 0.6 0.8
RSS(on) -- V
3A
SS
GS
SS
GS
V
-- V
-- V
IT11974
=1.5V
SS
Ta=25°C
IT14034
IT13590
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
I
-- V
10
9
8
7
-- A
S
6
5
4
3
Source Current, I
2
1
0
0 2.50.5 1.0 1.5 2.0
S
Gate-to-Source Voltage, V
80
70
60
(on) -- mΩ
50
SS
40
30
20
10
Static Source-to-Source
On-State Resistance, R
108246
0
--50 0 50 100 150 200
RSS(on) -- Ta
2.5
=
GS
V
=
GS
V
GS
V
Ambient Temperature, Ta -- °C
3.1
=
V, I
4.5
Ta=75°C
V, I
=1.5A
S
S
V, I
GS
--25°C
=1.5A
=3.0A
S
V
GS
25°C
GS
VSS=10V
IT13589
-- V
=3.0A
S
V, I
4.0
=
IT13591
No. A1177-4/6
EFC4606
⏐yfs⏐ -- I
--25
Ta=
75
fs⏐ -- S
y
10
7
5
3
2
VSS=10V
Forward Transfer Admittance, ⏐
1.0
0.1 1.0
23 57 23 57
Source Current, I
1000
7
5
3
2
100
7
5
3
Switching Time, SW Time -- ns
2
10
0.01 0.1
SW Time -- I
Source Current, I
4.5
VSS=10V
IS=6A
4.0
-- V
3.5
GS
3.0
2.5
2.0
1.5
1.0
Gate-to-Source Voltage, V
0.5
0
048 1310 12112637915
VGS -- Qg
Total Gate Charge, Qg -- nC
1.8
1.6
P
When mounted on ceramic substrate
(5000mm2✕0.8mm)
C
°
°
T
C
t
d
td(on)
S
C
°
25
-- A
S
S
(off)
t
f
t
r
573257325732
1.0 10
-- A
S
-- Ta
IT13592
VSS=10V
VGS=4.5A
IT13810
IT13811
I
-- VF(S-S)
C
°
Tc=75
S
C
C
°
°
25
--25
IT13963
SS
f=1MHz
2
VGS=0V
10
7
5
3
2
1.0
-- A
7
5
S
3
2
0.1
7
5
3
2
Source Current, I
0.01
7
5
3
2
10
0.001
0.20 0.4 0.80.6 1.21.0 1.4
Forward Source-to-Source Voltage, VF(S-S) -- V
3
2
Ciss, Coss, Crss -- V
Ciss
1000
7
5
3
Coss
2
Ciss, Coss, Crss -- pF
100
7
0
15 107983264
Source-to-Source Voltage, V
2
100
ISP=60A
7
5
3
2
10
I
=6A
S
-- A
7
5
S
3
2
1.0
7
5
3
2
Source Current, I
0.1
7
5
3
2
0.01
0.01
Operation in this area
is limited by RSS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (5000mm
23 5 23 57
0.1
Source-to-Source Voltage, V
Crss
A S O
23 57
SS
100ms
DC operation
2
2
357
1.0
SS
-- V
PW≤
1ms
10ms
✕0.8mm)
-- V
10
100
IT13861
100μs
μ
s
IT13594
1.4
-- W
1.2
T
1.0
0.8
0.6
Total Dissipation, P
0.4
0.2
0
0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13595
No. A1177-5/6
EFC4606
Note on usage : Since the EFC4606 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of September, 2008. Specifications and information herein are subject
to change without notice.
PS
No. A1177-6/6
Loading...