SANYO ECH8315 Technical data

Ordering number : ENA1387

ECH8315

SANYO Semiconductors

DATA SHEET

P-Channel Silicon MOSFET

ECH8315

General-Purpose Switching Device
Applications

Features

• Low ON-resistance.

• 4V drive.

• Halogen free compliance.

Specifi cations

Absolute Maximum Ratings

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics

Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V

Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Marking : JS Continued on next page.

at Ta=25°C

DSS

GSS
D
DP

D

PW≤10μs, duty cycle≤1% --40 A
When mounted on ceramic substrate (900mm

2

0.8mm)

×

at T a=25°C

Ratings

min typ max

(BR)DSSID

VDS=--30V, VGS=0V --1

DSS
GSS

yfs

|

|

RDS(on)1 ID=--3.5A, VGS=--10V 19 25
RDS(on)2 ID=--2A, VGS=--4.5V 31 44
RDS(on)3 ID=--2A, VGS=--4V 35 49

=--1mA, VGS=0V --30 V

VGS=±16V, VDS=0V ±10

VDS=--10V, ID=--3.5A 5 8.4 S

--30 V
±20 V

--7.5 A

1.5 W

Unit

A

μ

A

μ

m

Ω

m

Ω

m

Ω

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.

www.semiconductor-sanyo.com/network

D2408PE MS IM TC-00001772

No. A1387-1/4

ECH8315

2.8

Top View

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage

Ciss VDS=--10V, f=1MHz 875 pF
Coss VDS=--10V, f=1MHz 200 pF
Crss VDS=--10V, f=1MHz 150 pF
td(on) See specifi ed Test Circuit. 8.1 ns
tr See specifi ed Test Circuit. 33 ns
td(off) See specifi ed Test Circuit. 92 ns
t

f

Qg VDS=--15V, VGS=--10V, ID=--7.5A 18 nC
Qgs VDS=--15V, VGS=--10V, ID=--7.5A 2.1 nC
Qgd VDS=--15V, VGS=--10V, ID=--7.5A 4.7 nC
V

SD

See specifi ed Test Circuit. 60 ns

IS=--7.5A, VGS=0V --0.82 --1.2 V

Package Dimensions Electrical Connection

unit : mm (typ)
7011A-002

2.9

0.25

85

2.3

1

0.65

0.25

0.15

0 to 0.02

4

0.3

8765

1234

min typ max

Ratings

Unit

1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain

Top view

0.9

1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain

0.07

6 : Drain
7 : Drain
8 : Drain

B o tto m View

SANYO : ECH8

Switching Time Test Circuit

G

50Ω

VDD= --15V

ID= --3.5A
RL=4.3Ω

D

S

V

OUT

ECH8315

V

IN

0V

--10V

P.G

PW=10μs
D.C.≤1%

V

IN

No. A1387-2/4