Ordering number : ENA1387
ECH8315
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8315
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• 4V drive.
• Halogen free compliance.
Specifi cations
Absolute Maximum Ratings
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : JS Continued on next page.
at Ta=25°C
DSS
GSS
D
DP
D
PW≤10μs, duty cycle≤1% --40 A
When mounted on ceramic substrate (900mm
2
0.8mm)
×
at T a=25°C
Ratings
min typ max
(BR)DSSID
VDS=--30V, VGS=0V --1
DSS
GSS
yfs
|
|
RDS(on)1 ID=--3.5A, VGS=--10V 19 25
RDS(on)2 ID=--2A, VGS=--4.5V 31 44
RDS(on)3 ID=--2A, VGS=--4V 35 49
=--1mA, VGS=0V --30 V
VGS=±16V, VDS=0V ±10
VDS=--10V, ID=--3.5A 5 8.4 S
--30 V
±20 V
--7.5 A
1.5 W
Unit
A
μ
A
μ
m
Ω
m
Ω
m
Ω
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
D2408PE MS IM TC-00001772
No. A1387-1/4
ECH8315
2.8
Top View
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Ciss VDS=--10V, f=1MHz 875 pF
Coss VDS=--10V, f=1MHz 200 pF
Crss VDS=--10V, f=1MHz 150 pF
td(on) See specifi ed Test Circuit. 8.1 ns
tr See specifi ed Test Circuit. 33 ns
td(off) See specifi ed Test Circuit. 92 ns
t
f
Qg VDS=--15V, VGS=--10V, ID=--7.5A 18 nC
Qgs VDS=--15V, VGS=--10V, ID=--7.5A 2.1 nC
Qgd VDS=--15V, VGS=--10V, ID=--7.5A 4.7 nC
V
SD
See specifi ed Test Circuit. 60 ns
IS=--7.5A, VGS=0V --0.82 --1.2 V
Package Dimensions Electrical Connection
unit : mm (typ)
7011A-002
2.9
0.25
85
2.3
1
0.65
0.25
0.15
0 to 0.02
4
0.3
8765
1234
min typ max
Ratings
Unit
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
0.9
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
0.07
6 : Drain
7 : Drain
8 : Drain
B o tto m View
SANYO : ECH8
Switching Time Test Circuit
G
50Ω
VDD= --15V
ID= --3.5A
RL=4.3Ω
D
S
V
OUT
ECH8315
V
IN
0V
--10V
P.G
PW=10μs
D.C.≤1%
V
IN
No. A1387-2/4
--7.5
--7.0
--6.5
--10.0V
--6.0
--5.5
-- A
--5.0
D
Drain Current, I
--15.0V
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
--0.1 --0.4--0.2 --0.6--0.5--0.3 --0.8--0.7 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5
80
70
D
--3.5V
--4.0V
--4.5V
--6.0V
Drain-to-Source Voltage, V
DS
--3.0V
DS
GS
I
-- V
ID= --2A
60
(on) -- mΩ
50
DS
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --10 --12--8--6--4 --14 --16
3
2
10
7
5
3
2
1.0
7
5
3
2
Forward Transfer Admittance, | yfs | -- S
0.1
7
--0.01 --0.1
3
2
--3.5A
Gate-to-Source Voltage, V
| yfs | -- I
Ta= --25
2
Drain Current, I
SW Time -- I
GS
D
C
°
75°C
C
°
25
573
--1.0
-- A
D
D
ECH8315
I
-- V
RDS(on) -- TaRDS(on) -- V
GS
V
V
D
= --4.0V, I
GS
V
-- V
GS
= --2.5V
IT14298
Ta=25°C
--10
VDS= --10V
--9
--8
--7
-- A
D
--6
--5
--4
--3
Drain Current, I
--2
--1
0
70
60
50
(on) -- mΩ
DS
40
30
20
Gate-to-Source Voltage, V
V
10
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
IT14300
-- V
VDS= --10V
25732
573
--10
IT14302 IT14303
VDD= --15V
VGS= --10V
2
--10
7
5
3
2
-- A
S
--1.0
7
5
3
2
--0.1
Source Current, I
7
5
3
2
--0.01
--0.2 --0.4 --0.6 --1.2--1.0--0.8
3
2
Ambient Temperature, Ta -- °C
I
S
°C
Ta=75
Diode Forward Voltage, V
Ciss, Coss, Crss -- V
= --4.5V, I
= --10.0V, I
GS
-- V
C
°
25
--25
C
°
GS
Ta=75°C
= --2.0A
D
= --2.0A
D
SD
GS
= --3.5A
D
SD
--25
25
-- V
-- V
DS
C
°
C
°
VGS=0V
IT14299
IT14301
f=1MHz
Switching Time, SW Time -- ns
100
10
7
5
3
2
7
5
--0.1
2
357
Drain Current, I
t
(off)
d
td(on)
--1.0
t
f
t
r
23 57
-- A
D
IT14304
--10
1000
Ciss, Coss, Crss -- pF
100
Ciss
7
5
3
2
Coss
Crss
7
0
Drain-to-Source Voltage, V
DS
-- V
--30--5 --15 --20 --25--10
IT14305
No. A1387-3/4
ECH8315
--10
VDS= --10V
--9
ID= --7.5A
--8
-- V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source Voltage, V
--1
0
02468 1210 1614 18
VGS -- Qg
Total Gate Charge, Qg -- nC
P
-- Ta
1.8
1.6
1.5
-- W
1.4
D
1.2
1.0
0.8
D
When mounted on ceramic substrate
(900mm2×0.8mm)
IT14306
--100
7
5
3
2
--10
7
5
-- A
3
D
2
--1.0
7
5
3
2
Drain Current, I
--0.1
7
5
3
2
--0.01
--0.01
40A
--
=
I
DP
= --7.5A
I
D
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
5732
--0.1
A S O
DC operation (Ta=25
2
5732
--1.0
Drain-to-Source Voltage, V
PW≤10μs
100μs
1ms
10ms
100ms
°
C)
573235
--10
-- V
DS
IT14307
0.6
0.4
0.2
Allowable Power Dissipation, P
0020 40
60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT14308
Note on usage : Since the ECH8315 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of December, 2008. Specifi cations and information herein are subject
to change without notice.
No. A1387-4/4
PS
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