SANYO ECH8315 Technical data
Ordering number : ENA1387
ECH8315
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8315
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• 4V drive.
• Halogen free compliance.
Specifi cations
Absolute Maximum Ratings
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : JS Continued on next page.
at Ta=25°C
DSS
GSS
D
DP
D
PW≤10μs, duty cycle≤1% --40 A
When mounted on ceramic substrate (900mm
2
0.8mm)
×
at T a=25°C
Ratings
min typ max
(BR)DSSID
VDS=--30V, VGS=0V --1
DSS
GSS
yfs
|
|
RDS(on)1 ID=--3.5A, VGS=--10V 19 25
RDS(on)2 ID=--2A, VGS=--4.5V 31 44
RDS(on)3 ID=--2A, VGS=--4V 35 49
=--1mA, VGS=0V --30 V
VGS=±16V, VDS=0V ±10
VDS=--10V, ID=--3.5A 5 8.4 S
--30 V
±20 V
--7.5 A
1.5 W
Unit
A
μ
A
μ
m
Ω
m
Ω
m
Ω
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
D2408PE MS IM TC-00001772
No. A1387-1/4
ECH8315
2.8
Top View
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Ciss VDS=--10V, f=1MHz 875 pF
Coss VDS=--10V, f=1MHz 200 pF
Crss VDS=--10V, f=1MHz 150 pF
td(on) See specifi ed Test Circuit. 8.1 ns
tr See specifi ed Test Circuit. 33 ns
td(off) See specifi ed Test Circuit. 92 ns
t
f
Qg VDS=--15V, VGS=--10V, ID=--7.5A 18 nC
Qgs VDS=--15V, VGS=--10V, ID=--7.5A 2.1 nC
Qgd VDS=--15V, VGS=--10V, ID=--7.5A 4.7 nC
V
SD
See specifi ed Test Circuit. 60 ns
IS=--7.5A, VGS=0V --0.82 --1.2 V
Package Dimensions Electrical Connection
unit : mm (typ)
7011A-002
2.9
0.25
85
2.3
1
0.65
0.25
0.15
0 to 0.02
4
0.3
8765
1234
min typ max
Ratings
Unit
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
0.9
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
0.07
6 : Drain
7 : Drain
8 : Drain
B o tto m View
SANYO : ECH8
Switching Time Test Circuit
G
50Ω
VDD= --15V
ID= --3.5A
RL=4.3Ω
D
S
V
OUT
ECH8315
V
IN
0V
--10V
P.G
PW=10μs
D.C.≤1%
V
IN
No. A1387-2/4
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