SANYO DCA010 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : EN1892B

DCA010

Silicon Epitaxial Planar Type (Anode Common)

DCA010

Very High-Speed Switching Diode

Features

•

Ideally suited for use in hybrid ICs because
of very small-sized package.

• Fast switching speed.

• Small interterminal capacitance.

Electrical Connection

Anode

3

Package Dimensions

unit : mm

1117B

[DCA010]

0.4

3

0.95

0.95

1

1.9

2.9

0.5

2.5

1.5

2

0.5

0.16

0 to 0.1

1 : Cathode
2 : Cathode
3 : Anode

21

Cathode

(Top view)

Cathode

1.1

0.8

SANYO : CP

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Peak Reverse Voltage V
Reverse Voltage V
Peak Forward Current I

Average Rectified Current I

Surge Current (1µs) I

Allowable Power Dissipation P 200 mW
Junction T emperature Tj 125 °C
Storage T emperature T stg --55 to +125 °C

RM

R

FM

O

FSM

Unit rating 300 mA
Total rating 450 mA
Unit rating 100 mA
Total rating 150 mA
Unit rating 4 A
Total rating 6 A

85 V
80 V

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

12000 GI IM / 2019MO, TS

No.1892-1/3

DCA010

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions min typ max Unit

Forward Voltage V

Reverse Current I

F1

V

F2

V

F3

R1

I

R2

IF=1mA 0.61 V
IF=10mA 0.74 V
IF=100mA 1.20 V
VR=30V 0.1 µA

VR=80V 0.5 µA
Interterminal Capacitance C VR=0, f=1MHz 4.0 pF
Reverse Recovery Time t

rr

IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp 4.0 ns

Marking : W5

Reverse Recovery Time Test Circuit

0.01µF

--6V

DUT

0

50Ω

2kΩ

50Ω

IF=10mA

Irp

0.1Irp

50ns

IF -- V

3

10

5
2

2

10

5
2

-- mA

F

10

5
2

1.0
5

2

Forward Current, I

--1

10

5
2

--2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

Ta=100°C

F

25°C

--25°C

Forward Voltage, VF -- V

trr -- I

100

-- ns
rr

Reverse Recovery Time, t

1.0

7
5

3
2

10

7
5

3
2

7
5

0.1

352

1.0

Forward Current, IF -- mA

F

352

10 100

t

rr

IR -- V

75°C

50°C

25°C

C -- V

R

R

23 5 2

10 100

10

5
2

1.0
5

-- µA

R

2

--1

10

5
2

--2

10

Reverse Current, I

5
2

--3

10

0 20406080100

IT02033 IT02034

3.0

2.5

2.0

1.5

1.0

0.5

Interterminal Capacitance, C -- pF

352

IT02035 IT02036

0

0.1

23 5

Ta=100°C

Reverse Voltage, VR -- V

23 5

1.0

Reverse Voltage, VR -- V

f=1MHz

No.1892-2/3