Sanyo CPH6604 Specifications

Ordering number : ENN7147

CPH6604

N-Channel Silicon MOSFET

CPH6604

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

4V drive.

Package Dimensions

unit : mm

2202

[CPH6604]

2.9

5

6

1

4

1.6 0.60.6

23

0.95

2.8

0.15

0.05

1 : Source1

0.2

2 : Gate1

0.7 0.2

0.4

Specifications

4 : Source2
5 : Gate2
6 : Drain1

SANYO : CPH6

3 : Drain2

0.9

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 8.0 A
Mounted on a ceramic board (900mm2✕0.8mm)1unit

30 V

±20 V

2.0 A

0.9 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1A, VGS=10V 115 150 mΩ
RDS(on)2 ID=0.5A, VGS=4V 190 270 mΩ

=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V , ID=1A 1.3 1.8 S

min typ max

Marking : FP Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM T A-3454

No.7147-1/4

CPH6604

Continued from preceding page.

D

Ratings

ID=1A
RL=15Ω

V

OUT

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 120 pF
Output Capacitance Coss VDS=10V , f=1MHz 30 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 17 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=2.0A 3.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=2.0A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=2.0A 0.5 nC
Diode Forward Voltage V

SD

See specified Test Circuit. 4 ns

r

See specified Test Circuit. 5 ns

f

IS=2.0A, VGS=0 0.87 1.2 V

min typ max

Electrical Connection Switching Time T est Circuit

654

123

Top view

1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1

10V

0V

PW=10µs
D.C.≤1%

V

IN

V

VDD=15V

IN

G

Unit

3.0

2.5

2.0

-- A
D

1.5

1.0

5V

6V

8V

10V

ID -- V

4V

DS

=3V

V

GS

Drain Current, I

0.5

0

0 0.2 0.4 0.6 0.8 1.0

Drain-to-Source V oltage, VDS -- V

400

350

300

(on) -- mΩ

250

DS

200

150

100

50

Static Drain-to-Source

On-State Resistance, R

ID=0.5A

0

012345678910

RDS(on) -- V

1A

GS

Gate-to-Source V oltage, VGS -- V

CPH6604

S

ID -- V

GS

-- A
D

P.G

3.0

VDS=10V

2.5

2.0

1.5

1.0

50Ω

Drain Current, I

- -25°C

Ta=75°C

25°C

IT02698

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Gate-to-Source V oltage, VGS -- V

300

RDS(on) -- Ta

Ta=25°C

250

=4V

(on) -- mΩ

200

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

- -60 - -40 --20 0 20 40 60 80 100 120 160140

IT02700 IT02701

I

D

Ambient Temperature, Ta -- °C

=0.5A, V

=1.0A, V

I

D

GS

GS

=10V

IT02699

No.7147-2/4

CPH6604

yfs -- I

Ta= --25°C

fs -- S

y

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance, 

0.1

23 57 23 57 23 57

0.01

0.1 1.0 10

Drain Current, I

100

7
5

3
2

10

7
5

3

Switching Time, SW Time -- ns

2

1.0
7

35 7

SW Time -- I

t

f

t

r

23 5 723 5

0.1

Drain Current, I

10

VDS=10V

VGS -- Qg

ID=2A

8

-- V
GS

6

4

2

Gate-to-Source V oltage, V

0

0

Total Gate Charge, Qg -- nC

1.0

0.9

-- W

0.8

D

P

Mounted on a ceramic board(900mm

D

75°C

t

td(on)

-- Ta

25°C

(off)

d

D

D

D

-- A

D

1.0

-- A

VDS=10V

IT04063

VDD=15V
VGS=10V

IT02704

IT04064

I

-- V

F

25°C

--25°C

SD

SD

-- V

DS

VGS=0

IT02703

f=1MHz

10

7
5

3
2

1.0

-- A
F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Ta=75°C

Diode Forward V oltage, V

1000

7
5

3
2

Ciss, Coss, Crss -- V

Ciss

100

7
5

Ciss, Coss, Crss -- pF

3
2

10

0 5 10 15 20 25 30

Drain-to-Source V oltage, V

10

7

IDP=8A

5
3

I

=2A

D

2

-- A

1.0
7

D

5

Operation in this

3

area is limited by RDS(on).

2

0.1
7

Drain Current, I

5

Ta=25°C

3
2

Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)1unit

4.54.02.0 2.5 3.0 3.50.5 1.0 1.5

0.01

0.1

23 57

Drain-to-Source V oltage, V

Coss

Crss

-- V

DS

A S O

10ms

100ms

DC operation

23 571023 5

1.0

DS

-- V

1ms

100

IT02705

µs

IT04065

<

10µs

0.6

0.4

0.2

2

✕0.8mm)1unit

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Amibient Tamperature, Ta -- °C

IT04066

No.7147-3/4

CPH6604

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.

No.7147-4/4

PS