Page 1
Ordering number : ENN7145
CPH6602
N-Channel Silicon MOSFET
CPH6602
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
2.5V drive.
•
Composite type with 2 MOSFETs contained in a single
package, facilitating high-density mounting.
Package Dimensions
unit : mm
2202
[CPH6602]
2.9
5
6
1
4
1.6 0.60.6
23
0.95
2.8
0.15
0.05
1 : Source1
0.2
2 : Gate1
0.7 0.2
0.4
Specifications
4 : Source2
5 : Gate2
6 : Drain1
SANYO : CPH6
3 : Drain2
0.9
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 8.0 A
Mounted on a ceramic board (900mm2✕0.8mm)1unit
20 V
±10 V
2.0 A
0.9 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=1A, VGS=4V 100 130 mΩ
RDS(on)2 ID=0.5A, VGS=2.5V 130 180 mΩ
=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA
VDS=10V , ID=1A 2.4 3.5 S
min typ max
Marking : FM Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM T A-3452
No.7145-1/4
Page 2
CPH6602
Continued from preceding page.
D
Ratings
ID=1A
RL=10Ω
V
OUT
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V , f=1MHz 190 pF
Output Capacitance Coss VDS=10V , f=1MHz 40 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 25 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=4V, ID=2A 2.7 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=2A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=2A 0.6 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 25 ns
r
See specified Test Circuit. 18 ns
f
IS=2A, VGS=0 0.87 1.2 V
min typ max
Electrical Connection Switching Time Test Circuit
654
123
Top view
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
V
IN
4V
0V
PW=10µs
D.C.≤1%
V
IN
VDD=10V
G
Unit
2.0
1.8
4.0V
1.6
3.0V
1.4
-- A
D
1.2
1.0
6.0V
0.8
0.6
Drain Current, I
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
ID -- V
2.0V
2.5V
DS
=1.5V
V
GS
Drain-to-Source V oltage, VDS -- V
300
RDS(on) -- V
GS
IT02687
Ta=25°C
P.G
3.0
VDS=10V
2.5
2.0
-- A
D
1.5
1.0
Drain Current, I
0.5
0
0
250
50Ω
CPH6602
S
ID -- V
GS
25°C
Ta=75°C
--25°C
0.4 0.8 1.2 1.6 2.0
Gate-to-Source V oltage, VGS -- V
IT02688
RDS(on) -- Ta
250
(on) -- mΩ
200
DS
ID=0.5A
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
012345678910
1.0A
Gate-to-Source V oltage, VGS -- V
IT02689
200
(on) -- mΩ
DS
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
- -60
- -40 - -20 0 20 40 60 80 100 120 160140
=2.5V
GS
=0.5A, V
I
D
=4.0V
GS
=1.0A, V
I
D
Ambient Temperature, Ta -- °C
IT02690
No.7145-2/4
Page 3
10
VDS=10V
7
5
fs -- S
y
3
2
1.0
7
5
3
Forward Transfer Admittance,
2
23 57
0.01 0.1
100
VDD=10V
7
VGS=4V
5
3
2
10
7
5
3
Switching Time, SW Time -- ns
2
yfs -- I
Ta= --25°C
75°C
Drain Current, I
SW Time -- I
t
t
f
t
r
D
25°C
23 57 23 5
D
-- A
1.0
IT02691
D
(off)
d
td(on)
CPH6602
I
-- V
F
25°C
--25°C
Ciss
Coss
Crss
SD
SD
-- V
DS
10
7
5
3
2
1.0
-- A
F
7
5
3
2
0.1
7
Forward Current, I
5
3
2
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Ta=75°C
Diode Forward V oltage, V
Ciss, Coss, Crss -- V
Ciss, Coss, Crss -- pF
1000
7
5
3
2
100
7
5
3
2
VGS=0
IT02692
f=1MHz
1.0
0.1
4
V
=10V
DS
ID=2A
-- V
3
GS
2
1
Gate-to-Source V oltage, V
0
0
1.0
0.9
-- W
0.8
D
0.6
23 57
Drain Current, I
1.0
D
-- A
VGS -- Qg
123
Total Gate Charge, Qg -- nC
P
-- Ta
D
Mounted on a ceramic board(900mm
23 5
IT02693
IT04054
10
0 5 10 15 20
Drain-to-Source V oltage, V
10
7
IDP=8A
5
3
I
=2A
D
2
-- A
1.0
7
D
5
Operation in this
3
area is limited by RDS(on).
2
0.1
7
Drain Current, I
5
3
Ta=25°C
2
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)1unit
0.01
0.1 1.0
A S O
100ms
DC operation
23 5723 57
Drain-to-Source V oltage, V
DS
10ms
DS
-- V
1ms
10
-- V
IT02694
<10µs
23 5
IT04055
0.4
0.2
2
✕0.8mm)1unit
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Amibient Temperature, Ta -- °C
IT04056
No.7145-3/4
Page 4
CPH6602
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.
No.7145-4/4
PS
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