Sanyo CPH6501 Specifications
Ordering number : ENN6592
CPH6501
NPN Epitaxial Planar Silicon Transistor
CPH6501
DC / DC Converter Applications
Applications
•
Relay drivers, lamp drivers, motor drivers.
Package Dimensions
unit : mm
2187
4
[CPH6501]
1.6 0.60.6
0.9
0.7 0.2
0.4
2.8
0.15
0.05
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
SANYO : CPH6
0.2
Features
•
Composite type with two NPN transistors contained
in one package, facilitating high-density mounting.
• The CPH6501 consists of with two chips which are
equivalent to the CPH3215.
• Ultrasmall-sized package permitting facilitates
miniaturization in end products (0.9mm).
2.9
5
6
1
23
0.95
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Total Dissipation P
Junction T emperature Tj 150 °C
Storage Temperature T stg --55 to +125 °C
CBO
CEO
EBO
C
CP
B
C
T
Mounted on a ceramic board (600mm2✕0.8mm) 0.9 W
Mounted on a ceramic board (600mm2✕0.8mm) 1.2 W
40 V
30 V
5V
1.5 A
3A
300 mA
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
Marking : EA Continued on next page.
CBO
EBO
VCB=30V, IE=0 0.1 µA
VEB=4V, IC=0 0.1 µA
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72100 TS IM TA-2860
No.6592-1/4
CPH6501
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V , f=1MHz 8 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=750mA, IB=15mA 150 225 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=750mA, IB=15mA 0.85 1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
FE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
VCE=2V, IC=100mA 200 560
VCE=10V , IC=300mA 500 MHz
T
=10µA, IE=0 40 V
=1mA, RBE=∞ 30 V
=10µA, IC=0 5 V
See specified Test Circuit 35 ns
See specified Test Circuit 205 ns
See specified Test Circuit 30 ns
f
min typ max
Ratings
Switching Time Test Circuit Electrical Connection
Unit
PW=20µs
D.C.≤1%
INPUT
20IB1= --20IB2=IC=750mA
2.0
1.8
1.6
1.4
-- A
C
1.2
1.0
0.8
0.6
Collector Current, I
0.4
0.2
0
40mA
0
0.20.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, V
1000
7
Ta=75°C
5
25°C
3
FE
DC Current Gain, h
100
--25°C
2
7
5
3
2
10
2 3 57 2 3 57
0.01
V
R
50Ω
I
C
50mA
h
FE
0.1
Collector Current, I
I
B1
I
B2
R
B
+
100µF 470µF
-- V
CE
30mA
CE
-- I
C
-- A
C
+
VCC=12VVBE= --5V
8mA
-- V
C1 B2 E2
OUTPUT
R
L
16Ω
E1 B1 C2
I
V
--
20mA
10mA
1.6
1.4
1.2
-- A
C
1.0
C
BE
6mA
4mA
2mA
IB=0
IT01674 IT01676
VCE=2V
23
1.0
IT01678
0.8
0.6
0.4
Collector Current, I
0.2
0
0 0.2 0.4 0.6 0.8 1.21.0
Ta=75°C
Base-to-Emitter V oltage, V
f
I
--
T
3
2
1000
-- MHz
7
T
5
3
2
100
7
5
Gain-Bandwidth Product, f
3
2
23 57 23 257
0.01 1.00.1
C
Collector Current, I
25°C
--25°C
-- V
BE
-- A
C
VCE=2V
VCE=10V
IT01680
No.6592-2/4
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