SANYO CPH6403 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN5990B
CPH6403
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : KC
D
D
R
R
Package Dimensions
unit:mm
2151A
[CPH6403]
2.8
0.9
0.15
0.05
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
sgnitaR
nimpytxam
Continued on next page.
2.9
5
6
1
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %142A
PD
Mounted on a ceramic board (900mm2×0.8mm)
I
V,Am1=
0=02V
SG
V,V02=
0=1Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=5.03.1V
D
A3=3.69 S
D
V4=8283mΩ
SG
V5.2=8325mΩ
SG
zHM1=f,V01=007Fp
zHM1=f,V01=002Fp
zHM1=f,V01=051Fp
SSD
SSG
)ffo(SG
1IDV,A3=
)no(SD
2IDV,A1=
)no(SD
SSD)RB(
D
V
SD
V
SG
V
SD
SD
SD
SD
4
1.6 0.60.6
23
0.95
0.7 0.2
0.4
0.2
02V
01±V
6A
6.1W
˚C
˚C
tinU
N2100TS (KOTO) TA-2075 No.5990-1/4
CPH6403
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
SG
SG
I
DS
S
SG
V,A6=
0=78.02.1V
SG
Switching Time Test Circuit
tiucriCtseTdeificepseeS41sn
tiucriCtseTdeificepseeS09sn
tiucriCtseTdeificepseeS09sn
tiucriCtseTdeificepseeS001sn
I,V01=
D
I,V01=
D
I,V01=
D
sgnitaR
nimpytxam
A6=42Cn
A6=5.1Cn
A6=2.3Cn
tinU
G
50Ω
ID-
VDD=10V
ID=3A
RL=3.3Ω
D
S
V
DS
V
OUT
CPH6403
12
10
–A
D
8
6
4
4V
0V
P.G
4.0V
V
IN
PW=10µs
D.C.≤1%
3.0V
3.5V
2.5V
V
IN
2.0V
Drain Current, I
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V
Drain-to-Source Voltage, VDS–V
y
|
fs
|
-
I
D
fs|–S
y
100
7
5
3
2
VDS=10V
°C
10
7
5
3
2
Forward Transfer Admittance, |
1.0
23 57 2 2357
0.1 1.0 10
Ta=–25
75°C
25°C
Drain Current, ID–A
G
=1.0V
S
1.5V
ID-
V
12
VDS=10V
10
8
–A
D
6
4
Drain Current, I
2
0
0 0.40.2 0.8 1.2 1.80.6 1.0 1.61.4 2.0
GS
25°C
75°C
Ta=–25
°C
Gate-to-Source Voltage, VGS–V
R
80
70
60
–mΩ
I
=1A
D
50
DS(on)
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
024681012
DS(on)
ID=3A
-
V
GS
Ta=25°C
Gate-to-Source Voltage, VGS–V
No.5990-2/4
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