Sanyo CPH6401 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6152A

CPH6401

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : KA

D

D

R
R

Package Dimensions

unit:mm

2151A

[CPH6401]

2.8

0.9

nimpytxam

0.15

0.05

1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain

SANYO : CPH6

sgnitaR

Continued on next page.

2.9

5

6

1

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %161A

PD

Mounted on a ceramic board (900mm2×0.8mm)

I

V,Am1=

0=02V

SG

V,V02=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A2=52.7S

D

V4=5557mΩ

SG

V5.2=57501mΩ

SG

zHM1=f,V01=003Fp
zHM1=f,V01=081Fp
zHM1=f,V01=09Fp

SSD
SSG

)ffo(SG

1IDV,A2=

)no(SD

2IDV,A1=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

4

1.6 0.60.6

23

0.95

0.7 0.2

0.4

0.2

02V
21±V
4A

6.1W

˚C
˚C

tinU

50701TS (KOTO) TA-2126 No.6152-1/4

CPH6401

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A4=

0=58.02.1V

SG

Switching Time Test Circuit

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS05sn
tiucriCtseTdeificepseeS86sn
tiucriCtseTdeificepseeS85sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A4=81Cn
A4=1Cn
A4=3Cn

tinU

50Ω

3.0V

ID-

2.0V

2.5V

VDD=10V

D

S

V

DS

ID=2A
RL=5Ω

V

OUT

CPH6401

VGS=1.5V

V

IN

4V
0V

V

IN

PW=10µs
D.C.≤1%

G

P.G

4.5

4.0

3.5

–A

3.0

D

2.5

2.0

1.5

Drain Current, I

1.0

0.5

8.0V 6.0V

10.0V

4.0V

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1.0
7

5
3

2

Forward Transfer Admittance, |

0.1

0.01 0.1 1.0 10

Drain Current, ID–A

D

Ta=

75°C

23 5723 5723 57

VDS=10V

25°C

-

25°C

8

VDS=10V

7

6

–A

5

D

4

3

Drain Current, I

2

1

0

0.5 1.0 2.01.5 2.5

Gate-to-Source Voltage, VGS–V

140

120

–mΩ

100

DS(on)

80

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

ID=2A

1A

10 2345678910

Gate-to-Source Voltage, VGS–V

R

DS(on)

ID-

75°C

V

-

25°C

GS

Ta=

-

25°C

V

GS

Ta=

-

25°C

75°C

25°C

Ta=25°C

No.6152-2/4

R

140

120

–mΩ

100

DS(on)

80

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

-20-40-

60 40 60 80 100 120 160140

DS(on)

=1A,V

I

D

I

D

020

=2A,V

GS

-

=2.5V

GS

Ta

=4V

Ambient Temperature, Ta – ˚C

10000

1000

100

Ciss, Coss, Crss – pF

Ciss,Coss,Crss

7
5

3
2

7
5

3
2

7
5

3
2

10

42068101214161820 481216182 6 10 140

Drain-to-Source Voltage, VDS–V

-

CPH6401

IF-

V

10

7

VGS=0

5
3

2

1.0
7

–A

5

F

3
2

0.1
7
5

3
2

0.01

Forward Current, I

7
5

3
2

0.001
0 0.1 0.2 0.3 0.50.4 0.6 0.80.7 0.9 1.0

Diode Forward Voltage, VSD–V

V

DS

f=1MHz

Ciss

Coss

Crss

10

V

–

GS

Gate-to-Source Voltage, V

VDS=10V
ID=4A

9

8

7

6

5

4

3

2

1
0

V

GS

Total Gate Charge, Qg – nC

SD

25°C

Qg

25°C

-

Ta=

75°C

-

1000

VDD=10V

7

VGS=4V

5
3

2

100

7
5

3
2

10

7
5

Switching Time, SW Time – ns

3
2

1.0
72357235

SW Time

t

t

td(on)

Drain Current, ID–A

2.0

–W

1.6

D

1.2

0.8

0.4

P

Mounted on a ceramic board 900mm

d

f

D

(off)

-

I

D

t

r

1.00.1

-

Ta

2

×0.8mm)

3

IDP=16A

2

10

7

ID=4A

5
3

–A

2

D

1.0

,I

7
5

3
2

0.1

Drain Current

0.01

Operation in this area
is limited by RDS(on).

7
5

Ta=25°C

3

1 Pulse

2

Mounted on a ceramic board (900mm2×0.8mm)

A S O

DC operation

0.1 1.0 100.01

Drain-to-Source Voltage, VDS–V

100µs

1ms

10ms

100ms

23 5723 5723 57 23

Allowable Power Dissipation, P

0

20 6040 80 120100 140 1600

Ambient Temperature, Ta – ˚C

No.6152-3/4

CPH6401

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2001. Specifications and information herein are subject to
change without notice.

PS No.6152-4/4