Sanyo CPH6401 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6152A

CPH6401

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : KA

D

D

R
R

Package Dimensions

unit:mm

2151A

[CPH6401]

2.8

0.9

nimpytxam

0.15

0.05

1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain

SANYO : CPH6

sgnitaR

Continued on next page.

2.9

5

6

1

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %161A

PD

Mounted on a ceramic board (900mm2×0.8mm)

I

V,Am1=

0=02V

SG

V,V02=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A2=52.7S

D

V4=5557mΩ

SG

V5.2=57501mΩ

SG

zHM1=f,V01=003Fp
zHM1=f,V01=081Fp
zHM1=f,V01=09Fp

SSD
SSG

)ffo(SG

1IDV,A2=

)no(SD

2IDV,A1=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

4

1.6 0.60.6

23

0.95

0.7 0.2

0.4

0.2

02V
21±V
4A

6.1W

˚C
˚C

tinU

50701TS (KOTO) TA-2126 No.6152-1/4

CPH6401

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A4=

0=58.02.1V

SG

Switching Time Test Circuit

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS05sn
tiucriCtseTdeificepseeS86sn
tiucriCtseTdeificepseeS85sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A4=81Cn
A4=1Cn
A4=3Cn

tinU

50Ω

3.0V

ID-

2.0V

2.5V

VDD=10V

D

S

V

DS

ID=2A
RL=5Ω

V

OUT

CPH6401

VGS=1.5V

V

IN

4V
0V

V

IN

PW=10µs
D.C.≤1%

G

P.G

4.5

4.0

3.5

–A

3.0

D

2.5

2.0

1.5

Drain Current, I

1.0

0.5

8.0V 6.0V

10.0V

4.0V

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1.0
7

5
3

2

Forward Transfer Admittance, |

0.1

0.01 0.1 1.0 10

Drain Current, ID–A

D

Ta=

75°C

23 5723 5723 57

VDS=10V

25°C

-

25°C

8

VDS=10V

7

6

–A

5

D

4

3

Drain Current, I

2

1

0

0.5 1.0 2.01.5 2.5

Gate-to-Source Voltage, VGS–V

140

120

–mΩ

100

DS(on)

80

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

ID=2A

1A

10 2345678910

Gate-to-Source Voltage, VGS–V

R

DS(on)

ID-

75°C

V

-

25°C

GS

Ta=

-

25°C

V

GS

Ta=

-

25°C

75°C

25°C

Ta=25°C

No.6152-2/4