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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6152A
CPH6401
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : KA
D
D
R
R
Package Dimensions
unit:mm
2151A
[CPH6401]
2.8
0.9
nimpytxam
0.15
0.05
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
sgnitaR
Continued on next page.
2.9
5
6
1
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %161A
PD
Mounted on a ceramic board (900mm2×0.8mm)
I
V,Am1=
0=02V
SG
V,V02=
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=4.03.1V
D
A2=52.7S
D
V4=5557mΩ
SG
V5.2=57501mΩ
SG
zHM1=f,V01=003Fp
zHM1=f,V01=081Fp
zHM1=f,V01=09Fp
SSD
SSG
)ffo(SG
1IDV,A2=
)no(SD
2IDV,A1=
)no(SD
SSD)RB(
D
V
SD
V
SG
V
SD
SD
SD
SD
4
1.6 0.60.6
23
0.95
0.7 0.2
0.4
0.2
02V
21±V
4A
6.1W
˚C
˚C
tinU
50701TS (KOTO) TA-2126 No.6152-1/4
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CPH6401
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
SG
SG
I
DS
S
SG
V,A4=
0=58.02.1V
SG
Switching Time Test Circuit
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS05sn
tiucriCtseTdeificepseeS86sn
tiucriCtseTdeificepseeS85sn
I,V01=
D
I,V01=
D
I,V01=
D
sgnitaR
nimpytxam
A4=81Cn
A4=1Cn
A4=3Cn
tinU
50Ω
3.0V
ID-
2.0V
2.5V
VDD=10V
D
S
V
DS
ID=2A
RL=5Ω
V
OUT
CPH6401
VGS=1.5V
V
IN
4V
0V
V
IN
PW=10µs
D.C.≤1%
G
P.G
4.5
4.0
3.5
–A
3.0
D
2.5
2.0
1.5
Drain Current, I
1.0
0.5
8.0V 6.0V
10.0V
4.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0
Drain-to-Source Voltage, VDS–V
y
|
fs
|
-
I
100
7
5
3
fs|–S
2
y
10
7
5
3
2
1.0
7
5
3
2
Forward Transfer Admittance, |
0.1
0.01 0.1 1.0 10
Drain Current, ID–A
D
Ta=
75°C
23 5723 5723 57
VDS=10V
25°C
-
25°C
8
VDS=10V
7
6
–A
5
D
4
3
Drain Current, I
2
1
0
0.5 1.0 2.01.5 2.5
Gate-to-Source Voltage, VGS–V
140
120
–mΩ
100
DS(on)
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
ID=2A
1A
10 2345678910
Gate-to-Source Voltage, VGS–V
R
DS(on)
ID-
75°C
V
-
25°C
GS
Ta=
-
25°C
V
GS
Ta=
-
25°C
75°C
25°C
Ta=25°C
No.6152-2/4