SANYO CPH6351 Datasheet
Ordering number : ENN6936
Preliminary
CPH6351
P-Channel Silicon MOSFET
CPH6351
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2151A
[CPH6351]
2.9
5
6
4
2.8
1.6 0.60.6
0.15
0.2
0.05
1 : Drain
1
23
0.95
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Specifications
0.4
0.7 0.2
0.9
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --12 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.6 W
--20 V
±10 V
--3 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--1.5A, VGS=--4V 90 120 mΩ
RDS(on)2 ID=--0.5A, VGS=--2.5V 140 200 mΩ
=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--1.5A 3.3 4.8 S
Marking : JE Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42501 TS IM TA-2650
No.6936-1/4
CPH6351
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 400 pF
Output Capacitance Coss VDS=--10V, f=1MHz 200 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 100 pF
Turn-ON Delay Time td(on) See specified Test Circuit 15 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 75 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 15 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 1 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 3 nC
Diode Forward Voltage V
SD
See specified Test Circuit 65 ns
r
See specified Test Circuit 70 ns
f
IS=--3A, VGS=0 --0.85 --1.5 V
Switching Time Test Circuit
VDD= --10V
V
IN
0V
--4V
PW=10µs
D.C.≤1%
V
IN
G
D
ID= --1.5A
RL=6.6Ω
V
OUT
Ratings
min typ max
Unit
P.G
--3.0
--2.5
--6.0V
--8.0V
--2.0
-- A
D
--10.0V
--1.5
--1.0
--4.0V
50Ω
I
--3.0V
--2.5V
D
-- V
S
DS
--2.0V
CPH6351
Drain Current, I
--0.5
0
0 --0.2
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
Drain-to-Source V oltage, VDS -- V
200
180
160
140
(on) -- mΩ
DS
120
ID= --0.5A
100
80
60
40
Static Drain-to-Source
On-State Resistance, R
20
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
RDS(on) -- V
--1.5A
GS
Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C
VGS= --1.5V
IT03108
Ta=25°C
IT03110
I
-- V
D
-- A
D
--6
VDS= --10V
--5
--4
--3
--2
Drain Current, I
--1
25°C
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0
Ta=7
°C
5
--25
GS
°C
Gate-to-Source V oltage, VGS -- V
RDS(on) -- Ta
200
180
160
140
(on) -- mΩ
DS
120
100
80
60
40
Static Drain-to-Source
On-State Resistance, R
20
0
--60
--20--40 402008060 140120100 160
RDS(on) -- Ta
GS
= --0.5A, V
I
D
= --1.5A, V
I
D
= --2.5V
= --4.0V
GS
°C
--25
Ta=
25°C
°C
75
IT03109
IT03111
No.6936-2/4
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