Sanyo CPH6319 Specifications

Ordering number : ENN7182

CPH6319

P-Channel Silicon MOSFET

CPH6319

High-Speed Switching Applications

Features

Package Dimensions

•

Low ON-resistance.

unit : mm

•

High-speed switching.

2151A

•

1.8V drive.

[CPH6319]

2.9

0.15

0.2

6

5

4

0.6

2.8

0.05

1.6

1

0.6

2

3

0.95

0.2

1 : Drain

2 : Drain

3 : Gate

0.9

0.7

4 : Source

5 : Drain

Specifications

0.4

6 : Drain

Absolute Maximum Ratings at Ta=25°C

SANYO : CPH6

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--12

V

Gate-to-Source Voltage

VGSS

±8

V

Drain Current (DC)

ID

--5

A

Drain Current (Pulse)

IDP

PW£10ms, duty cycle£1%

--20

A

Allowable Power Dissipation

PD

Mounted on a ceramic board (900mm2 0.8mm)

1.5

W

Mounted on a FR4 board PW£5s

2.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0

--12

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--12V, VGS=0

--10

mA

Gate-to-Source Leakage Current

IGSS

VGS=±6.4V, VDS=0

±10

mA

Cutoff Voltage

VGS(off)

VDS=--6V, ID=--1mA

--0.3

--1.0

V

Forward Transfer Admittance

½yfs½

VDS=--6V, ID=--3A

5.8

8.5

S

RDS(on)1

ID=--3A, VGS=--4.5V

36

47

mW

Static Drain-to-Source On-State Resistance

RDS(on)2

ID=--1.5A, VGS=--2.5V

52

73

mW

RDS(on)3

ID=--0.3A, VGS=--1.8V

72

105

mW

Marking : JV

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

41002 TS IM TA-3484 No.7182-1/4

CPH6319

Continued from preceding page.

Parameter	Symbol	Conditions			Ratings		Unit
				min	typ	max
Input Capacitance	Ciss	VDS=--6V, f=1MHz			940		pF
Output Capacitance	Coss	VDS=--6V, f=1MHz			230		pF
Reverse Transfer Capacitance	Crss	VDS=--6V, f=1MHz			180		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit.			12		ns
Rise Time	tr	See specified Test Circuit.			143		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit.			71		ns
Fall Time	tf	See specified Test Circuit.			89		ns
Total Gate Charge	Qg	VDS=--6V, VGS=--4.5V, ID=--5A			11		nC
Gate-to-Source Charge	Qgs	VDS=--6V, VGS=--4.5V, ID=--5A			1.6		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=--6V, VGS=--4.5V, ID=--5A			2.8		nC
Diode Forward Voltage	VSD	IS=--5A, VGS=0			--0.85	--1.5	V

Switching Time Test Circuit

		VDD= --6V
VIN
0V				ID= --3A
--4.5V				RL=2.0Ω
PW=10μs	VIN	D		VOUT
D.C.≤ 1%
	G
P.G	50Ω
			S	CPH6319

	--5.0															ID -- VDS
				0V													5V
				.
																.
	--4.5			3												2
				--
			5V									8V				--
	--4.0
			.						.
			3						1
A	--3.5		--	5V					--				.	5V
--									--			1
			.
D			4
I	--3.0		--
Current,	--2.0
Drain	--2.5
	--1.5
																						V			= --1.0V
	--1.0
																								GS
	--0.5
	0
	0		--0.1				--0.2 --0.3									--0.4 --0.5 --0.6 --0.7							--0.8			--0.9		--1.0
							Drain-to-Source Voltage, VDS																-- V				IT03865
	160											RDS(on) -- VGS
																									Ta=25°C
mΩ	140
--	120									--	1.5A
(on)
DS
Source-to-DrainStatic Resistance,State-OnR	100						--3.0A
	20
	80
	60	I	D= --0.3A
	40
	0
	0			--1			--2									--3		--4		--5			--6			--7		--8
								Gate-to-Source Voltage, VGS															-- V				IT03867

		--9										ID -- VGS
			VDS= --6V
		--8
A		--7
--		--6
D
I		--5
Current,
		--4
Drain
		--3																		C
																		°
		--2															Ta=75							25
																						C		°C
		--1																		25	°
		0																--
		0		--0.2 --0.4 --0.6									--0.8			--1.0						--1.2			--1.4			--1.6			--1.8
							Gate-to-Source Voltage, VGS																		-- V			IT03866
		120								RDS(on) -- Ta
mΩ		100
	--
	(on)	80														= --						1.8V
	DS												0.3A,		VGS
									I	=		--
	Resistance,State-OnR
Source-to-DrainStatic									D
		60														= --						.5V
																						2
									I	=			.5A,VGS
												--1
									D							V			=			4.5V
													.0A,			GS
		40								I	= --3
										D
		20
		0
		--60		--40 --20 0							20		40			60				80 100 120								140			160
								Ambient Temperature, Ta -- °C																					IT03868

No.7182-2/4