Sanyo CPH6316 Specifications

Page 1
Ordering number : ENN7026
CPH6316
P-Channel Silicon MOSFET
CPH6316
High-Speed Switching Applications
Features
Low ON-resistance.
High-speed switching.
4V drive.
Package Dimensions
unit : mm
2151A
2.9
5
6
1
23
[CPH6316]
4
1.6 0.60.6
0.95
2.8
0.15
1 : Drain
0.2
0.05
2 : Drain
0.7 0.2
0.4
Specifications
4 : Source 5 : Drain 6 : Drain
SANYO : CPH6
3 : Gate
0.9
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% --12 A Mounted on a ceramic board (1200mm2✕0.8mm)
--30 V
±20 V
--3 A
1.6 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS GSS
yfs
RDS(on)1 ID=--1A, VGS=--10V 115 150 m RDS(on)2 ID=--0.5A, VGS=--4V 210 295 m
=--1mA, VGS=0 --30 V VDS=--30V, VGS=0 --1 µA VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--1A 1.4 2 S
Marking : JS Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92501 TS IM TA-3311
No.7026-1/4
Page 2
CPH6316
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 200 pF Output Capacitance Coss VDS=--10V, f=1MHz 47 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 32 pF Turn-ON Delay Time td(on) See specified Test Circuit. 7.2 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit. 21 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 5.5 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 0.98 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 0.82 nC Diode Forward Voltage V
SD
See specified Test Circuit. 2.9 ns
r
See specified Test Circuit. 8.7 ns
f
IS=--3A, VGS=0 --0.86 --1.2 V
Switching Time Test Circuit
G
VDD= --15V
ID= --1A RL=15
D
V
OUT
0V
--10V
PW=10µs D.C.1%
V
IN
V
IN
Ratings
min typ max
Unit
P.G
--2.0
--1.6
-- A D
--1.2
--0.8
Drain Current, I
--0.4
0
0
400
350
--6.0V
--10.0V
50
--4.0V
I
D
-- V
S
DS
--3.5V
--0.2
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
Drain-to-Source V oltage, V
RDS(on) -- V
CPH6316
DS
GS
V
-- V
= --3.0V
GS
Ta=25°C
IT03223
I
-- V
--5.0
VDS=10V
--4.5
--4.0
--3.5
-- A D
--3.0
--2.5
--2.0
--1.5
Drain Current, I
--1.0
--0.5 0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5
D
Gate-to-Source V oltage, V
400
350
RDS(on) -- Ta
GS
Ta=75°C
--25°C
25°C
GS
-- V
IT03224
300
(on) -- m
250
DS
200
--1.0A
ID= --0.5A
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --12 --14 --16--10 --18 --20
Gate-to-Source V oltage, V
GS
-- V
IT03225
300
(on) -- m
250
DS
200
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
= --0.5A, V
I
D
= --1.0A, V
I
D
GS
GS
= --4V
= --10V
Ambient Temperature, Ta -- °C
IT03226
No.7026-2/4
Page 3
CPH6316
10
7 5
fs -- S
y
3 2
1.0 7 5
3 2
Forward Transfer Admittance,
0.1
23 57 23 57 23 57
--0.01 --0.1
2
VDD= --15V
--10V
VGS=
100
7 5
3 2
Switching Time, SW Time -- ns
10
7 5
3 2
td(on)
yfs -- I
25°C
75°C
Ta= --25°C
Drain Current, I
SW Time -- I
t
(off)
d
t
f
t
r
D
VDS=10V
--1.0 --10
-- A
D
D
IT03227
I
-- V
F
25°C
Ciss
Coss
Crss
SD
--25°C
SD
-- V
DS
--10 7 5
3 2
-- A
--1.0
F
7 5
3 2
--0.1 7
Forward Current, I
5 3
2
--0.01
--0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2
Ta=75°C
Diode Forward V oltage, V
Ciss, Coss, Crss -- V
Ciss, Coss, Crss -- pF
3
2
100
7
5
3
2
VGS=0
IT03228
f=1MHz
1.0
--0.1 --1.0
--10
--9
--8
-- V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source V oltage, V
--1 0
01234 65
23 57 23 5
Drain Current, I
D
-- A
VGS -- Qg
VDS= --10V ID= --3A
Total Gate Charge, Qg -- nC
P
-- Ta
2.0
-- W D
1.6
1.5
Mounted on a ceramic board(1200mm
D
IT03229
IT03231
10
0 --5 --10 --15 --20 --25 --30
Drain-to-Source V oltage, V
3 2
I
= --12A
DP
--10 7 5
I
= --3A
D
3 2
-- A D
--1.0 7 5
3 2
--0.1
Drain Current, I
7 5
3 2
--0.01
Operation in this area is limited by RDS(on).
Ta=25°C Single pulse Mounted on a ceramic board(1200mm2✕0.8mm)
23 57 23 57
--0.1
A S O
23 57
DC operation
--1.0--0.01
Drain-to-Source V oltage, V
DS
10ms
100ms
DS
-- V
1ms
-- V
<10µs
100
--10
IT03230
µ
s
23 5
IT03603
1.0
0.5
2
0.8mm)
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03601
No.7026-3/4
Page 4
CPH6316
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of September, 2001. Specifications and information herein are subject to change without notice.
No.7026-4/4
PS
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