Sanyo CPH6316 Specifications

Ordering number : ENN7026

CPH6316

P-Channel Silicon MOSFET

CPH6316

High-Speed Switching Applications

Features

•Low ON-resistance.

•High-speed switching.

•4V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Package Dimensions

unit : mm

2151A

		[CPH6316]		0.15
	2.9					0.2
6	5	4
		0.6
		1.6	2.8		0.05
1		0.6
	2	3
		0.95		1	: Drain
		0.2		2	: Drain
		0.7	0.9	3	: Gate
				4	: Source
		0.4		5	: Drain
				6	: Drain

SANYO : CPH6

Parameter	Symbol	Conditions			Ratings			Unit
Drain-to-Source Voltage	VDSS						--30	V
Gate-to-Source Voltage	VGSS						±20	V
Drain Current (DC)	ID						--3	A
Drain Current (Pulse)	IDP	PW£10ms, duty cycle£1%					--12	A
Allowable Power Dissipation	PD	Mounted on a ceramic board (1200mm2 0.8mm)					1.6	W
Channel Temperature	Tch						150	°C
Storage Temperature	Tstg				--55 to +150			°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions			Ratings			Unit
			min		typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=--1mA, VGS=0	--30					V
Zero-Gate Voltage Drain Current	IDSS	VDS=--30V, VGS=0					--1	mA
Gate-to-Source Leakage Current	IGSS	VGS=±16V, VDS=0					±10	mA
Cutoff Voltage	VGS(off)	VDS=--10V, ID=--1mA	--1.2				--2.6	V
Forward Transfer Admittance	½yfs½	VDS=--10V, ID=--1A	1.4		2			S
Static Drain-to-Source On-State Resistance	RDS(on)1	ID=--1A, VGS=--10V			115		150	mW
	RDS(on)2	ID=--0.5A, VGS=--4V			210		295	mW
Marking : JS					Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92501 TS IM TA-3311 No.7026-1/4

CPH6316

Continued from preceding page.

Parameter	Symbol	Conditions			Ratings		Unit
				min	typ	max
Input Capacitance	Ciss	VDS=--10V, f=1MHz			200		pF
Output Capacitance	Coss	VDS=--10V, f=1MHz			47		pF
Reverse Transfer Capacitance	Crss	VDS=--10V, f=1MHz			32		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit.			7.2		ns
Rise Time	tr	See specified Test Circuit.			2.9		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit.			21		ns
Fall Time	tf	See specified Test Circuit.			8.7		ns
Total Gate Charge	Qg	VDS=--10V, VGS=--10V, ID=--3A			5.5		nC
Gate-to-Source Charge	Qgs	VDS=--10V, VGS=--10V, ID=--3A			0.98		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=--10V, VGS=--10V, ID=--3A			0.82		nC
Diode Forward Voltage	VSD	IS=--3A, VGS=0			--0.86	--1.2	V

Switching Time Test Circuit

VIN		VDD= --15V
0V
--10V
	VIN		ID= --1A
			RL=15Ω
PW=10μs		D	VOUT
D.C.≤ 1%
	G
	50Ω		CPH6316
P.G			S

ID -- VDS

--2.0	0V	.0V			. 0V
	.			4
	10	6
		--	--
	--
--1.6

A												.5V
--
								3
D								--
	--1.2
I
Current,	--0.8														V		= --3.0V
															GS
Drain
	--0.4
	0
	0		--0.1			--0.2		--0.3 --0.4 --0.5 --0.6 --0.7							--0.8		--0.9		--1.0
						Drain-to-Source Voltage, VDS									-- V		IT03223
	400							RDS(on) -- VGS
																Ta=25°C
Ω	350
m
--	300
(on)
DS	250
Source-to-DrainStatic Resistance,State-OnR								--1.0A
	50
	200
	150		I	D=	--0.5A
	100
	0
	0		--2			--4		--6 --8 --10 --12 --14							--16		--18		--20
						Gate-to-Source Voltage, VGS -- V											IT03225

	--5.0										ID -- VGS
	--4.5	VDS=10V
A	--4.0
	--3.5
--
D	--3.0
I
Current,	--2.0
Drain	--2.5
	--1.5																		C
																		°					°	C
	--1.0																Ta=75			--		25
	--0.5																				°		C
																				25
	0
	0		--0.5 --1.0 --1.5										--2.0 --2.5 --3.0												--3.5			--4.0			--4.5
						Gate-to-Source Voltage, VGS																			-- V			IT03224
	400								RDS(on) -- Ta
Ω	350
m
--	300
(on)
																				--
DS																		=					4V
	250													0		.5A,	VGS
Source-to-DrainStatic Resistance,State-OnR									I		=		--
	50									D
	200
																			= --10V
	150
																.0A,	VGS
										I		=		--1
										D
	100
	0
	--60		--40 --20 0 20											40 60 80										100 120				140			160
							Ambient Temperature, Ta -- °C																					IT03226

No.7026-2/4