SANYO CPH6312 Datasheet
Ordering number : ENN6934
Preliminary
CPH6312
P-Channel Silicon MOSFET
CPH6312
High-Speed Switching Applications
Features
•
Low ON-resistance.
• High-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2151A
2.9
5
6
1
23
[CPH6312]
4
1.6 0.60.6
0.95
2.8
0.15
1 : Drain
0.2
0.05
2 : Drain
3 : Gate
0.9
0.7 0.2
0.4
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --20 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.6 W
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
--30 V
±20 V
--5 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--3A, VGS=--10V 41 53 mΩ
RDS(on)2 ID=--1.5A, VGS=--4.5V 62 87 mΩ
RDS(on)3 ID=--1.5A, VGS=--4V 70 98 mΩ
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--3A 3.6 5.2 S
Marking : JN Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33001 TS IM TA-3174
No.6934-1/4
CPH6312
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 770 pF
Output Capacitance Coss VDS=--10V, f=1MHz 155 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 100 pF
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 58 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--5A 16.5 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--5A 2.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--5A 2.5 nC
Diode Forward Voltage V
SD
See specified Test Circuit 58 ns
r
See specified Test Circuit 47 ns
f
IS=--5A, VGS=0 --0.83 --1.5 V
Switching Time Test Circuit
VDD= --15V
V
IN
0V
--10V
PW=10µs
D.C.≤1%
V
IN
G
ID= --3A
RL=5Ω
D
V
OUT
Ratings
min typ max
Unit
P.G
--
6
--
5
--
4
-- A
D
--
3
--
2
--6.0V
--10.0V
--4.5V
50Ω
I
D
--4.0V
-- V
--3.5V
S
DS
--3.0V
CPH6312
Drain Current, I
--
1
0
0
--
0.2
--
0.1
--
0.4
--
0.3
--
0.6
--
0.5
--
Drain-to-Source V oltage, VDS -- V
140
120
RDS(on) -- V
ID=
--3.0A
GS
--1.5A
100
(on) -- mΩ
DS
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
0--2--4--6--8--10--12--14--16--18--20
Gate-to-Source V oltage, VGS -- V
0.7
V
GS
--
0.8
= --2.5V
--
0.9
IT03141
Ta=25°C
IT03143
I
-- V
--
8
VDS= --10V
--
7
--
6
-- A
--
5
D
--
4
--
3
Drain Current, I
--
2
--
1
--
1.0
0
0--0.5--1.0--1.5--2.0--2.5--3.0--3.5--4.0
D
Gate-to-Source V oltage, VGS -- V
140
120
100
(on) -- mΩ
DS
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
--60
--40 --20 0 20 40 60 80 100 120 160140
RDS(on) -- Ta
I
D
I
D
I
D
Ambient Temperature, Ta -- °C
25°C
= --1.5A, V
= --1.5A, V
= --3.0A, V
GS
GS
Ta=75°C
= --4.0V
GS
= --4.5V
GS
= --10.0V
°C
--25
IT03142
IT03144
No.6934-2/4
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