SANYO CPH6311 Datasheet
Ordering number : ENN6794
Preliminary
CPH6311
P-Channel Silicon MOSFET
CPH6311
Ultrahigh-Speed Switching Applications
Features
•
Low ON-state resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2151A
[CPH6311]
2.9
5
6
4
1.6 0.60.6
2.8
0.15
0.2
0.05
1 : Drain
1
23
0.95
2 : Drain
3 : Gate
4 : Source
5 : Drain
0.9
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --20 A
Mounted on a ceramic board (900mm
Mounted on a FR4 board PW≤5S 2.0 W
2
0.7 0.2
0.4
✕0.8mm) 1.6 W
6 : Drain
SANYO : CPH6
--20 V
±10 V
--5 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=-- 3A, VGS=--4.5V 32 42 mΩ
RDS(on)2 ID=
=-- 1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --1 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--3A 5.8 8.5 S
--1A, V
=--2.5V 46 60 mΩ
GS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2500 TS IM TA-3168
No.6794-1/4
Unit
CPH6311
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 1230 pF
Output Capacitance Coss VDS=--10V, f=1MHz 200 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 170 pF
Turn-ON Delay Time td(on) See specified Test Circuit 17 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 100 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--5A 31 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--5A 2.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--5A 4.2 nC
Diode Forward Voltage V
Marking : JM
SD
See specified Test Circuit 100 ns
r
See specified Test Circuit 95 ns
f
IS=
--5A, V
=0 --0.83 --1.5 V
GS
Switching Time Test Circuit
VDD= --10V
V
IN
0V
--4.5V
PW=10µs
D.C.≤1%
V
IN
G
D
ID= --3A
RL=3.3Ω
V
OUT
Ratings
min typ max
Unit
--6
--3.5V
--5
--4.0V
--4
-- A
D
--3
--4.5V
--2
Drain Current, I
--1
0
0 --0.2
140
120
P.G
50Ω
I
D
-- V
S
DS
--3.0V
--2.5V
--2.0V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
--1.5V
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
CPH6311
VGS= --1.0V
IT02276
Ta=25°C
I
-- V
--8
VDS= --10V
--7
--6
-- A
--5
D
--4
--3
Drain Current, I
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8
D
GS
Ta=75°C
°C
--25
Gate-to-Source V oltage, VGS -- V
140
120
RDS(on) -- Ta
25°C
IT02277
100
(on) -- mΩ
DS
80
60
ID= --1.0A
40
20
Static Drain-to-Source
On-State Resistance, R
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
--3.0A
Gate-to-Source V oltage, VGS -- V
IT02278
100
(on) -- mΩ
DS
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
--40 --20 0 20 40 60 80 100 120 160140
--60
= --2.5V
= --1.0A, V
I
D
= --3.0A, V
I
D
GS
GS
= --4.5V
Ambient Temperature, Ta -- °C
IT02279
No.6794-2/4
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