SANYO CPH6102 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Ordering number:ENN5810
CPH6102/CPH6202
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· DC-DC converter, rela y drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of FBET, MBIT processes.
· High current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall package permitting applied sets to be made small and slim (0.9mm).
· High allowable power dissipation.
( ) : CPH6102
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC OEC OBE
C
PC
Mounted on a ceramic board (600mm2×0.8mm)
C
Package Dimensions
unit:mm
2146A
[CPH6102/6202]
2.9
5
6
1
4
23
0.95
2.8
1.6 0.60.6
0.9
0.7 0.2
0.4
0.15
0.2
0.05
1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector SANYO : CPH6
06)–(V
05)–(V
5)–(V
0.1)–(A
2)–(A
3.1W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
hEF1VECI,V2)–(= hEF2VECI,V2)–(=
V
OBC OBE
T
BC
V
BE
V
EC BC
I,V05)–(=
0=001)–(An
E
I,V4)–(=
0=001)–(An
C C C
I,V01)–(=
C
Am001)–(=
A1)–(=
Am05)–(=051zHM
zHM1=f,V01)–(=
D1099TS (KOTO) TA-1949 No.5810–1/4
sgnitaR
nimpytxam
002065 03
5.8)21(Fp
Continued on next page.
tinU
CPH6102/CPH6202
Continued from preceding page.
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egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
I,Am005)–(=
B
I,Am005)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
EB
I,Aµ01)–(=
C
Am05)–(= Am05)–(=9.0)–(2.1)–(V
0=06)–(V
= 05)–(V
0=5)–(V
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS .tiucrictsetdeificepseeS
sgnitaR
nimpytxam
)081–()005–(Vm
021003Vm
)04(04sn
053sn
)003(sn )03(03sn
tinU
PW=20µs D.C.≤1%
IB1 IB2
INPUT
R
V
B
R
50
100µF 470µF
VBE=–5V VCC=25V
10IB1=–10IB2=IC=500mA
(For PNP, the polarity is reversed.)
OUTPUT
R
+
L
+
No.5810–2/4
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