SANYO CPH6001 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise
Amplifier Applications
Ordering number:ENN6132A
CPH6001
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· High gain : S21e2=11dB typ (f=1GHz).
· High cutoff frequency : fT=6.7GHz typ.
· Small and slim 6-pin package.
· Large allowable collector dissipation (800mW max).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
Marking : GA
Package Dimensions
unit:mm
2146A
[CPH6001]
2.9
5
6
1
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF|e12S|
erugiFesioN
OBC
OEC
OBE
C
C
V
OBC
OBE
hEF1VECI,V5=
hEF2VECI,V5=
f
T
FNVBCI,V5=
BC
V
BE
V
EC
BC
BC
2
V
BC
I,V01=
0=0.1Aµ
E
I,V1=
0=01Aµ
C
Am03=
C
Am07=
C
I,V5=
Am03=
C
zHM1=f,V5=
zHM1=f,V5=
I,V5=
C
C
zHG1=f,Am03=
zHG1=f,Am7=1.10.2Bd
4
2.8
1.6 0.60.6
23
0.95
0.9
0.7 0.2
0.4
2
mm052(draobcimarecanodetnuoM
× )mm8.0008Wm
0.15
0.2
0.05
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
SANYO : CPH6
02V
21V
2V
001Am
sgnitaR
nimpytxam
09081
07
57.6zHG
59.05.1Fp
6.0Fp
911Bd
˚C
˚C
tinU
60100TS (KOTO) TA-2924 No.6132–1/6
CPH6001
I
-- V
50
45
40
35
–mA
C
30
25
20
15
Collector Current, I
10
5
0
021357468910
7
5
3
2
FE
100
7
5
DC Current Gain, h
3
2
10
10
7
5
3
2
0.35mA
Collector-to-Emitter Voltage, VCE–V
1.0
C
h
3357 223235577
Collector Current, IC–mA
Cob -- V
CE
-- I
FE
C
=5V
V
CE
10 100
CB
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0
IT00469
2V
IT00471
f=1MHz
I
-- V
100
90
80
70
–mA
C
60
50
40
30
Collector Current, I
20
10
0
0 0.20.1 0.3 0.5 0.7 0.9 1.10.4 0.6 0.8 1.0 1.2
10
7
Base-to-Emitter Voltage, VBE–V
C
f
T
-- I
BE
V
C
V
CE
CE
=5V
2V
=5V
–GHz
5
T
3
2
2V
Gain-Bandwidth Product, f
1.0
10
7
5
3
2
23 57
1.0
23 57
Collector Current, IC–mA
10 100
Cre -- V
CB
IT00470
IT00472
f=1MHz
1.0
7
5
3
Output Capacitance, Cob – pFNoise Figure, NF – dB
2
0.1
0.1 1.0 10
10
9
8
7
6
5
4
3
2
1
0
2 3 57 2 3 57
Collector-to-Base Voltage, VCB–V
NF -- I
23 5772357
1.0
Collector Current, IC– mA Collector Current, IC–mA
C
=2V
V
CE
10 100
5V
IT00473
f=1GHz
IT00475
1.0
7
5
3
2
Reverse Transfer Capacitance, Cre – pF
0.1
0.1 1.0 10
14
13
12
–dB
2
11
10
9
8
7
6
5
4
3
2
Forward Transfer Gain, S21e
1
0
1.0 10 100
23 57 23 57
Collector-to-Base Voltage, VCB–V
S21e
2
-- I
C
=5V
V
CE
2V
35723572
IT00474
f=1GHz
IT00476
No.6132–2/6
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