Sanyo CPH5905 Specifications

Ordering number : ENN7177

CPH5905

NPN Epitaxial Planar Silicon Transistor

N-Channel Silicon Junction FET

CPH5905

High-Frequency Amplifier , AM Amplifier,

Low-Frequency Amplifier Applications

Features

•

Composite type with J-FET and NPN transistors
contained in the CPH5 package, improving the
mounting efficiency greatly .

•

The CPH5905 contains a 2SK3557-equivalent chip
and a 2SC4639-equivalent chip in one package.

•

Drain and emitter are shared.

Package Dimensions

unit : mm

2196

345

[CPH5905]

1.6 0.60.6

0.40.95

0.2

0.7

0.4

2.8

0.9

2.9

12

0.15

0.2

0.05

1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base

SANYO : CPH5

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
[FET]
Drain-to-Source Voltage V
Gate-to-Drain Voltage V
Gate Current I
Drain Current I
Allowable Power Dissipation P
[TR]
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
[Common Ratings]
Total Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

Marking : 1E

DSX
GDS

G
D

D

CBO
CEO
EBO

C

CP

B

C

T

15 V

--15 V
10 mA
50 mA

200 mW

55 V
50 V

6V
150 mA
300 mA

30 mA

200 mW

300 mW

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22802 TS IM TA-3495

No.7177-1/5

Electrical Characteristics at T a=25°C

CPH5905

Parameter Symbol Conditions

[FET]
Gate-to-Drain Breakdown Voltage` V
Gate Cutoff Current I
Cutoff Voltage VGS(off) VDS=5V, ID=100µA --0.4 --0.7 --1.5 V
Drain Current I
Forward Transfer Admittance
Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz 10.0 pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz 2.9 pF
Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.0 dB
[TR]
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=6V, f=1MHz 1.7 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.08 0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA 0.8 1.0 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t

* : The CPH5905 is classified by I

Rank G H
I

DSS

The specifications shown above are for each individual FET or a transistor.

10.0 to 20.0 16.0 to 32.0

as follows : (unit : mA)

DSS

(BR)GDSIG

GSS

DSS

yfs





CBO
EBO

FE

T

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

f

=--10µA, VDS=0 --15 V

VGS=--10V, VDS=0 --1.0 nA

VDS=5V, VGS=0 10.0* 32.0* mA
VDS=5V, VGS=0, f=1kHz 24 35 mS

VCB=35V, IE=0 0.1 µA
VEB=4V, IC=0 0.1 µA
VCE=6V, IC=1mA 135 400
VCE=6V, IC=10mA 200 MHz

=10µA, IE=0 55 V
=1mA, RBE=∞ 50 V

=10µA, IC=0 6 V
See specified Test Circuit. 0.15 µs
See specified Test Circuit. 0.75 µs
See specified Test Circuit. 0.20 µs

Ratings

min typ max

Unit

Electrical Connection (Top view) Switching Time Test Circuit

B S

CG

20

16

-- mA

12

D

8

Drain Current, I

4

0

0

E / D

I

D

-- V

V

GS

DS

=0

[FET]

--0.1V

--0.2V

--0.3V

--0.4V

--0.5V

--0.6V

--0.7V

0.4 0.8 1.2 1.6 2.0 2.4

Drain-to-Source V oltage, VDS -- V

ITR02749

PC=20µs
D.C.≤1%

INPUT

50Ω

10IB1= --10IB2=IC=10mA

20

16

-- mA

12

D

8

Drain Current, I

4

0

24681012

0

Drain-to-Source V oltage, VDS -- V

I

--0.7V

V

D

I

B1

I

B2

1kΩ

R

220µF 470µF

-- V

+

DS

V

GS

--0.1V

--0.2V

--0.3V

--0.4V

--0.5V

--0.6V

=0

+

VCC=20VVBE= --5V

OUTPUT

R

L

2kΩ

[FET]

ITR02750

No.7177-2/5

I

22

VDS=5V

20
18
16
14

-- mA
D

12
10

8
6

Drain Current, I

4
2

0

--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2

D -- VGS

=30mA

DSS

I

20mA

15mA

10mA

Gate-to-Source V oltage, VGS -- V

7

V

=5V

DS

f=1kHz

5

yfs -- I

D

30mA

3

2

I

DSS

=15mA

CPH5905

[FET]

IT04224

[FET]

I

16

VDS=5V
I

=15mA

DSS

14

12

10

-- mA
D

8

6

Drain Current, I

4

2

0

--1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2

D -- VGS

Ta=--25°C

75°C

25°C

Gate-to-Source V oltage, VGS -- V

100

yfs -- I

7

5

DSS

[FET]

ITR02752

[FET]

VDS=5V
VGS=0
f=1kHz

10

7
5

3

Forward Transfer Admittance, yfs -- mS

2

3

3

2

-- V

(off)

GS

1.0

7

5

Cutoff V oltage, V

3

7

10

7

-- pF

5

75235723

1.0

10

Drain Current, ID -- mA

VGS(off) -- I

DSS

5

IT04225

[FET]

VDS=5V
ID=100µA

10

Drain Current, I

Crss -- V

23 5

DSS

-- mA

DS

IT04227

[FET]

VDS=0
f=1MHz

3

2

Forward Transfer Admittance, yfs -- mS

10

7

3

10

Drain Current, I

Ciss -- V

23 5

DSS

-- mA

DS

IT04226

[FET]

VGS=0
f=1MHz

2

-- pF

10

7

5

Input Capacitance, Ciss

3

72357 23

1.0 10

Drain-to-Source V oltage, V

10

NF -- f

DS

-- V

IT04228

[FET]

VDS=5V
ID=1mA

8

Rg=1kΩ

Noise Figure, NF -- dB

6

4

2

0

2

3 5 7 2 3 5 7 2 3 5 7 2 3 5 7

0.01

0.1 1.0 10

Frequency, f -- kHz

3

2

1.0

7

Reverse Transfer Capacitance, Crss

5

73

1.0

2

Drain-to-Source V oltage, V

10

DS

-- V

2357

IT04229

100

ITR02758

No.7177-3/5

10

8

6

4

NF -- Rg

Noise Figure, NF -- dB

2

0

2

3 5 7 2 3 5 7 2 3 5 7 2 3 5 7

0.1

1.0 10 100

Signal Source Resistance, Rg -- kΩ

I

-- V

C

50

45

40

35

-- mA
C

30

25

20

15

Collector Current, I

10

5
0

0 0.4 1.00.80.60.2 0.3 0.90.70.50.1

500µA

450µA

CE

400µA

Collector-to-Emitter Voltage, V

I

-- V

C

Ta=75°C

BE

25°C

--25°C

160

140

120

-- mA

100

C

80

60

40

Collector Current, I

20

0

0 0.2 0.4 0.80.6 1.0 1.41.2

Base-to-Emitter V oltage, V

f

-- I

T

7
5

3

-- MHz
T

2

100

7
5

Gain-Bandwidth Product, f

3

2

1.0 10

52732

C

Collector Current, IC -- mA

BE

CE

CPH5905

[FET]

VDS=5V

240

ID=1mA
f=1kHz

200

-- mW
D

160

120

80

40

Allowable Power Dissipation, P

0

1000

ITR02759 ITR02760

[TR]

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

12

350µA

300µA

10

250µA

200µA

150µA

100µA

-- V

-- V

5732

50µA

IB=0

ITR10376

[TR]

VCE=6V

ITR10378

[TR]

VCE=6V

100

ITR10380

8

-- mA

C

6

4

Collector Current, I

2

0

020 504010 3015 4535525

Collector-to-Emitter Voltage, V

2

1000

7

FE

5

3
2

100

DC Current Gain, h

7
5

3

5

3

2

-- pF

10

7
5

3

Input Capacitance, Cib

2

1.0

325

0.1

57 5732

1.0 10

Emitter-to-Base Voltage, V

PD -- Ta

I

-- V

C

50µA

45µA

40µA

h

Ta=75°C

25°C

--25°C

1.0

Collector Current, IC -- mA

Cib -- V

CE

35µA

30µA

25µA

-- I

FE

32325

C

10

EB

EB

20µA

CE

-- V

15µA
10µA

5µA

IB=0

-- V

VCE=6V

100

f=1MHz

No.7177-4/5

[FET]

[TR]

ITR10377

[TR]

325

ITR10379

[TR]

ITR10381

5

3
2

-- pF

10

7
5

3
2

Output Capacitance, Cob

1.0
7

5

1.0 10

Collector-to-Base Voltage, V

10

7

V

--

5

(sat)

3

BE

2

Cob -- V

CB

5757 32

VBE(sat) -- I

CPH5905

[TR] [TR]

f=1MHz

5732

-- V

CB

C

100

ITR10382

[TR] [TR]

IC / IB=10

3
2

V

--

1.0
7

(sat)

5

CE

3
2

0.1
7

Collector-to-Emitter

Saturation V oltage, V

5

3
2

1.0

250

200

-- mW
C

150

VCE(sat) -- I

Ta=75

723 5 72235

10 100

--25

C

°C

°C

Collector Current, IC -- mA

P

-- Ta

C

IC / IB=10

25°C

ITR10383

1.0

7

Base-to-Emitter

Saturation V oltage, V

5

3

1.0

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

°C

Ta= --25

°C

75

723 5 72235

10 100

25°C

Collector Current, IC -- mA

ITR10384

100

50

Collector Dissipation, P

0

2006040 80 100 140120 160

Ambient Temperature, Ta -- °C

ITR10385

This catalog provides information as of February, 2002. Specifications and information herein are subject
to change without notice.

No.7177-5/5

PS