Sanyo CPH5902 Specifications

Ordering number : ENN6962

CPH5902

NPN Epitaxial Planar Silicon Transistor

N-Channel Silicon Junction FET

CPH5902

High-Frequency Amplifier , AM Amplifier,

Low-Frequency Amplifier Applications

Features

• Composite type with J-FET and NPN transistors

contained in the CPH5 package, improving the
mounting efficiency greatly.

• The CPH5902 contains a 2SK2394-equivalent chip

and a 2SC4639-equivalent chip in one package.

•

Drain and emitter are shared.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
[FET]
Drain-to-Source Voltage V
Gate-to-Drain Voltage V
Gate Current I
Drain Current I
Allowable Power Dissipation P
[TR]
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
[Common Ratings]
Total Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

Marking : RB

DSX
GDS

G
D

D

CBO
CEO
EBO

C

CP

B

C

T

Package Dimensions

unit : mm

2196

2.9

12

[CPH5902]

345

1.6 0.60.6

0.40.95

0.2

0.7

0.4

0.9

2.8

0.15

1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base

SANYO : CPH5

0.2

0.05

15 V

--15 V
10 mA
50 mA

200 mW

55 V
50 V

6V
150 mA
300 mA

30 mA

200 mW

300 mW

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52501 TS IM TA-3247

No.6962-1/5

Electrical Characteristics at Ta=25°C

CPH5902

Parameter Symbol Conditions

[FET]
Gate-to-Drain Breakdown Voltage` V
Gate Cutoff Current I
Cutoff Voltage VGS(off) VDS=5V, ID=100µA --0.4 --0.7 --1.5 V
Drain Current I
Forward Transfer Admittance
Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz 10.0 pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz 2.9 pF
Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.0 dB
[TR]
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=6V, f=1MHz 1.7 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.08 0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA 0.8 1.0 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t

* : The CPH5902 is classified by I

DSS

(BR)GDSIG

GSS

DSS

yfs





CBO
EBO

FE

T

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

f

as follows : (unit : mA)

=--10µA, VDS=0 --15 V

VGS=--10V, VDS=0 --1.0 nA

VDS=5V, VGS=0 10.0* 32.0* mA
VDS=5V, VGS=0, f=1kHz 24 38 mS

VCB=35V, IE=0 0.1 µA
VEB=4V, IC=0 0.1 µA
VCE=6V, IC=1mA 135 400
VCE=6V, IC=10mA 200 MHz

=10µA, IE=0 55 V
=1mA, RBE=∞ 50 V

=10µA, IC=0 6 V
See specified Test Circuit 0.15 µs
See specified Test Circuit 0.75 µs
See specified Test Circuit 0.20 µs

Ratings

min typ max

Rank G H
I

DSS

10.0 to 20.0 16.0 to 32.0

The specifications shown above are for each individual FET or transistor.

Unit

Electrical Connection (Top view) Switching Time Test Circuit

B S

CG

20

16

-- mA

12

D

8

Drain Current, I

4

0

0

E / D

I

D

-- V

DS

V

GS

[FET]

=0

--0.1V

--0.2V

--0.3V

--0.4V

--0.7V

--0.5V

--0.6V

0.4 0.8 1.2 1.6 2.0

Drain-to-Source V oltage, V

DS

-- V

ITR10364

PC=20µs
D.C.≤1%

INPUT

50Ω

10IB1= --10IB2=IC=10mA

20

16

-- mA

12

D

8

Drain Current, I

4

0

0

246810

Drain-to-Source V oltage, V

I

B1

I

1kΩ

V

R

220µF 470µF

I

-- V

D

B2

+

DS

--0.7V

DS

+

VCC=20VVBE= --5V

-- V

OUTPUT

R

L

2kΩ

[FET]

=0

V

GS

--0.1V

--0.2V

--0.3V

--0.4V

--0.5V

--0.6V

ITR10365

No.6962-2/5

I

22

VDS=5V

20
18
16

-- mA

14

D

12
10

8
6

Drain Current, I

4
2

0

--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0

Gate-to-Source V oltage, V

7

V

=5V

DS

5

f=1kHz

3

2

D -- VGS

yfs -- I

I

DSS

DSS

I

GS

D

=15mA

=20mA

15mA

-- V

10mA

30mA

CPH5902

[FET]

IT03287

[FET]

I

16

VDS=5V
I

=15mA

DSS

14

12

-- mA

10

D

8

6

Drain Current, I

4

2

0

--1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0

Gate-to-Source V oltage, V

100

7

5

D -- VGS

yfs -- I

Ta= --25°C

DSS

25°C

GS

75°C

-- V

[FET]

ITR10367

[FET]

VDS=5V
VGS=0
f=1kHz

10

7

5

3

Forward Transfer Admittance, yfs -- mS

2

3

2

--1.0

-- V

7

GS(off)

5

3

2

Cutoff V oltage, V

--0.1
7

10

7

5

75235723

1.0

Drain Current, I

VGS(off) -- I

D

10

-- mA

DSS

5

IT03288

[FET]

VDS=5V
ID=100µA

10

Drain Current, I

Crss -- V

23 5

DSS

DS

-- mA

IT03290

[FET]

VGS=0
f=1MHz

3

2

Forward Transfer Admittance, yfs -- mS

10

7

3

2

10

7

5

3

2

Input Capacitance, Ciss -- pF

1.0
7235723

10

10

Drain Current, I

Ciss -- V

1.0 10

Drain-to-Source V oltage, V

23 5

DSS

DS

-- mA

IT03289

[FET]

VGS=0
f=1MHz

-- V

NF -- f

DS

ITR10371

[FET]

VDS=5V
ID=1mA

8

Rg=1kΩ

Noise Figure, NF -- dB

6

4

2

0

357 2357 2357 2357

2

0.01

0.1 1.0 10

Frequency, f -- kHz

3

2

1.0

7

Reverse Transfer Capacitance, Crss -- pF

5

73

1.0

2

Drain-to-Source V oltage, V

10

DS

-- V

2357

ITR10372

100

ITR10373

No.6962-3/5

CPH5902

10

8

6

4

NF -- Rg

Noise Figure, NF -- dB

2

0

2

357 2357 2357 2357

0.1

1.0 10 100

Signal Source Resistance, Rg -- kΩ

50

40

-- mA
C

30

20

Collector Current, I

10

0

0 0.4 1.00.80.60.2

500µA

C

450µA

CE

400µA

I

-- V

Collector-to-Emitter Voltage, V

I

-- V

160

140

120

-- mA

100

C

80

60

40

Collector Current, I

20

0

0 0.2 0.4 0.80.6 1.0 1.41.2

C

Ta=75°C

BE

25°C

--25°C

Base-to-Emitter V oltage, V

f

-- I

T

7
5

3

-- MHz
T

2

100

7
5

Gain-Bandwidth Product, f

3

2

1.0 10

52732

C

Collector Current, IC -- mA

BE

[FET]

VDS=5V

240

PD -- Ta

ID=1mA
f=1kHz

200

-- mW
D

160

120

80

40

Allowable Power Dissipation, P

0

1000

ITR10374 ITR10375

[TR]

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

I

-- V

C

12

CE

350µA

CE

300µA

250µA

200µA

150µA

100µA

50µA

IB=0

-- V

ITR10376

[TR]

VCE=6V

10

50µA

45µA

8

-- mA

C

6

4

Collector Current, I

2

0

020 504010 30

Collector-to-Emitter Voltage, V

2

1000

7

FE

5

3
2

Ta=75°C

25°C

40µA

h

FE

35µA

30µA

-- I

25µA

C

--25°C

100

DC Current Gain, h

7
5

3

325

ITR10378

-- V
[TR]

VCE=6V f=1MHz

5732

100

ITR10380

0.1

5

3

2

-- pF
ib

10

7
5

3

Input Capacitance, c

2

1.0
57 5732

Collector Current, IC -- mA

1.0 10

Emitter-to-Base Voltage, V

32325

1.0

c

-- V

ib

10

EB

EB

20µA

CE

-- V

15µA
10µA

5µA

IB=0

-- V

VCE=6V

100

No.6962-4/5

[FET]

[TR]

ITR10377

[TR]

325

ITR10379

[TR]

ITR10381

CPH5902

5

3
2

-- pF

10

7
5

3
2

Output Capacitance, Cob

1.0
7

5

1.0 10

Collector-to-Base Voltage, V

10

7

V

--

5

(sat)

3

BE

2

1.0

7

Base-to-Emitter

Saturation V oltage, V

5

Cob -- V

5757 32

VBE(sat) -- I

°C

Ta= --25

°C

75

CB

C

CB

25°C

-- V

IC / IB=10

[TR] [TR]

f=1MHz

5732

100

ITR10382

[TR] [TR]

3
2

V

--

1.0
7

(sat)

5

CE

3
2

0.1
7

Collector-to-Emitter

Saturation V oltage, V

5

3
2

1.0

250

200

-- mW
C

150

100

50

Collector Dissipation, P

VCE(sat) -- I

Ta=75

723 5 72235

10 100

--25

C

°C

°C

Collector Current, IC -- mA

P

-- Ta

C

IC / IB=10

25°C

ITR10383

3

1.0

723 5 72235

10 100

Collector Current, IC -- mA

ITR10384

0

2006040 80 100 140120 160

Ambient Temperature, Ta -- °C

ITR10385

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2001. Specifications and information herein are subject
to change without notice.

No.6962-5/5

PS