Sanyo CPH5805 Specifications

Sanyo CPH5805 Specifications

Ordering number : ENN6981

CPH5805

MOSFET : N-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

CPH5805

DC / DC Converter Applications

Features

Composite type with an N-Channel Sillicon MOSFET (MCH3412) and a Schottky Barrier Diode (SBS006)

contained in one package facilitating high-density mounting.

[MOSFET]

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

[SBD]

Short reverse recovery time.

Low forward voltage.

Package Dimensions

unit : mm

2171

[CPH5805]

2.9

5 4 3

0.6

 

1.6

2.8

0.6

 

12

0.950.4

0.2

 

0.7

0.9

0.4

0.15

0.2

 

 

0.05

1 : Cathode

2 : Drain

3 : Gate

4 : Source

5 : Anode

SANYO : CPH5

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

[MOSFET]

 

 

 

 

 

 

 

 

 

Drain-to-Source Voltage

VDSS

 

30

V

Gate-to-Source Voltage

VGSS

 

±20

V

Drain Current (DC)

ID

 

3

A

Drain Current (Pulse)

IDP

PW10μs, duty cycle1%

12

A

Allowable Power Dissipation

PD

Mounted on a ceramic board (600mm2 0.8mm) 1unit

0.9

W

Channel Temperature

Tch

 

150

°C

Storage Temperature

Tstg

 

--55 to +125

°C

[SBD]

 

 

 

 

 

 

 

 

 

Repetitive Peak Reverse Voltage

VRRM

 

30

V

Nonrepetitive Peak Reverse Surge Voltage

VRSM

 

30

V

Average Output Current

IO

 

0.5

A

Surge Forward Current

IFSM

50Hz sine wave, 1 cycle

10

A

Junction Temperature

Tj

 

--55 to +125

°C

Storage Temperature

Tstg

 

--55 to +125

°C

Marking : QF

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62001 TS IM TA-3173 No.6981-1/5

CPH5805

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

 

Ratings

 

Unit

 

 

 

 

 

 

min

typ

max

 

 

 

 

 

 

 

 

[MOSFET]

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0

30

 

 

V

Zero-Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0

 

 

1

mA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0

 

 

±10

mA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.2

 

2.6

V

Forward Transfer Admittance

½yfs½

VDS=10V, ID=1.5A

2.1

3

 

S

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=1.5A, VGS=10V

 

64

84

mW

RDS(on)2

ID=1A, VGS=4V

 

105

150

mW

 

 

Input Capacitance

Ciss

VDS=10V, f=1MHz

 

180

 

pF

Output Capacitance

Coss

VDS=10V, f=1MHz

 

42

 

pF

Reverse Transfer Capacitance

Crss

VDS=10V, f=1MHz

 

25

 

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit

 

7

 

ns

Rise Time

tr

See specified Test Circuit

 

28

 

ns

Turn-OFF Delay Time

td(off)

See specified Test Circuit

 

18.5

 

ns

Fall Time

tf

See specified Test Circuit

 

4.4

 

ns

Total Gate Charge

Qg

VDS=10V, VGS=10V, ID=3A

 

4.9

 

nC

Gate-to-Source Charge

Qgs

VDS=10V, VGS=10V, ID=3A

 

0.93

 

nC

Gate-to-Drain “Miller” Charge

Qgd

VDS=10V, VGS=10V, ID=3A

 

0.63

 

nC

Diode Forward Voltage

VSD

IS=3A, VGS=0

 

0.85

1.2

V

[SBD]

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse Voltage

VR

IR=0.5mA

30

 

 

V

Forward Voltage

VF1

IF=0.3A

 

0.35

0.4

V

VF2

IF=0.5A

 

0.42

0.47

V

 

 

Reverse Current

IR

VR=10V

 

 

200

mA

Interterminal Capacitance

C

VR=10V, f=1MHz cycle

 

20

 

pF

Reverse Recovery Time

trr

IF=IR=100mA

 

 

10

ns

Electrical Connection (Top view)

5 4 3

 

 

 

 

 

 

 

 

 

 

 

 

1

: Cathode

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

: Drain

 

 

 

 

 

 

 

 

 

 

 

 

3

: Gate

 

 

 

 

 

 

 

 

 

 

 

 

4

: Source

1

 

 

 

 

 

 

2

 

5

: Anode

Switching Time Test Circuit

 

trr Test Circuit

 

 

[MOSFET]

 

 

 

[SBD]

 

 

VIN

 

VDD=15V

Duty≤ 10%

 

 

10V

 

 

 

 

 

 

0V

 

 

 

 

 

 

 

VIN

 

ID=1A

50Ω

100Ω

10Ω

 

 

RL=15W

 

 

 

 

 

 

PW=10ms

 

D

VOUT

10µs

 

 

 

 

 

 

 

 

 

 

 

 

 

D.C.≤ 1%

 

 

 

 

--5V

 

 

G

 

 

 

 

 

 

 

 

 

 

 

 

 

CPH5805

 

 

 

P.G

50W

S

(MOSFET)

 

 

 

 

 

 

 

 

 

 

 

 

 

100mA

 

 

 

 

 

 

 

 

 

 

 

 

 

10mA

 

 

 

 

 

 

 

 

 

 

 

100mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

trr

No.6981-2/5

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