Sanyo CPH5804 Specifications
Ordering number : ENN6980
CPH5804
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
CPH5804
DC / DC Converter Applications
Features
•Composite type with a P-Channel Sillicon MOSFET (MCH3312) and a Schottky Barrier Diode (SBS006M)
contained in one package facilitating high-density mounting.
[MOSFET]
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V drive.
[SBD]
•Short reverse recovery time.
•Low forward voltage.
Package Dimensions
unit : mm
2171
[CPH5804]
2.9
5 4 3
0.6 |
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1.6 |
2.8 |
0.6 |
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12
0.950.4
0.2 |
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0.7 |
0.9 |
0.4
0.15 |
0.2 |
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0.05 |
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
[MOSFET] |
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Drain-to-Source Voltage |
VDSS |
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--30 |
V |
Gate-to-Source Voltage |
VGSS |
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±20 |
V |
Drain Current (DC) |
ID |
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--2 |
A |
Drain Current (Pulse) |
IDP |
PW≤10μs, duty cycle≤1% |
--8 |
A |
Allowable Power Dissipation |
PD |
Mounted on a ceramic board (600mm2 0.8mm) 1unit |
0.9 |
W |
Channel Temperature |
Tch |
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150 |
°C |
Storage Temperature |
Tstg |
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--55 to +125 |
°C |
[SBD] |
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Repetitive Peak Reverse Voltage |
VRRM |
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30 |
V |
Nonrepetitive Peak Reverse Surge Voltage |
VRSM |
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30 |
V |
Average Output Current |
IO |
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0.5 |
A |
Surge Forward Current |
IFSM |
50Hz sine wave, 1 cycle |
10 |
A |
Junction Temperature |
Tj |
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--55 to +125 |
°C |
Storage Temperature |
Tstg |
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--55 to +125 |
°C |
Marking : QE
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62001 TS IM TA-3172 No.6980-1/5
CPH5804
Electrical Characteristics at Ta=25°C
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Conditions |
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Ratings |
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min |
typ |
max |
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[MOSFET] |
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Drain-to-Source Breakdown Voltage |
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V(BR)DSS |
ID=--1mA, VGS=0 |
--30 |
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V |
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Zero-Gate Voltage Drain Current |
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IDSS |
VDS=--30V, VGS=0 |
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--1 |
mA |
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Gate-to-Source Leakage Current |
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IGSS |
VGSS=±16V, VDS=0 |
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±10 |
mA |
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Cutoff Voltage |
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VGS(off) |
VDS=--10V, ID=--1mA |
--1.2 |
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--2.6 |
V |
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Forward Transfer Admittance |
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½yfs½ |
VDS=--10V, ID=--1A |
1.4 |
2.0 |
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S |
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Static Drain-to-Source On-State Resistance |
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RDS(on)1 |
ID=--1A, VGS=--10V |
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110 |
145 |
mW |
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RDS(on)2 |
ID=--500mA, VGS=--4V |
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205 |
290 |
mW |
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Input Capacitance |
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Ciss |
VDS=--10V, f=1MHz |
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200 |
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pF |
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Output Capacitance |
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Coss |
VDS=--10V, f=1MHz |
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47 |
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pF |
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Reverse Transfer Capacitance |
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Crss |
VDS=--10V, f=1MHz |
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32 |
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pF |
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Turn-ON Delay Time |
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td(on) |
See specified Test Circuit |
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7.2 |
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ns |
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Rise Time |
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tr |
See specified Test Circuit |
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2.9 |
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Turn-OFF Delay Time |
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td(off) |
See specified Test Circuit |
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21 |
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Fall Time |
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tf |
See specified Test Circuit |
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8.7 |
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Total Gate Charge |
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Qg |
VDS=--10V, VGS=--10V, ID=--2A |
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5.5 |
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nC |
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Gate-to-Source Charge |
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Qgs |
VDS=--10V, VGS=--10V, ID=--2A |
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0.98 |
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nC |
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Gate-to-Drain “Miller” Charge |
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Qgd |
VDS=--10V, VGS=--10V, ID=--2A |
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0.82 |
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nC |
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Diode Forward Voltage |
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VSD |
IS=--2A, VGS=0 |
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--0.85 |
--1.5 |
V |
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[SBD] |
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Reverse Voltage |
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VR |
IR=0.5mA |
30 |
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V |
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Forward Voltage |
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VF1 |
IF=0.3A |
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0.35 |
0.4 |
V |
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VF2 |
IF=0.5A |
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0.42 |
0.47 |
V |
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Reverse Current |
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IR |
VR=10V |
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200 |
mA |
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Interterminal Capacitance |
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C |
VR=10V, f=1MHz, 1 cycle |
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20 |
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pF |
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Reverse Recovery Time |
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trr |
IF=IR=100mA, See specified Test Circuit. |
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10 |
ns |
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Electrical Connection (Top view) |
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A |
S |
G |
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G : Gate |
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S : Source |
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A : Anode |
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C : Cathode |
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D : Drain |
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C |
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D |
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Switching Time Test Circuit |
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trr Test Circuit |
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[MOSFET] |
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[SBD] |
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VIN |
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VDD= --15V |
Duty≤ 10% |
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0V |
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--10V |
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VIN |
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ID= --1A |
50Ω |
100Ω |
10Ω |
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RL=15W |
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PW=10ms |
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D |
VOUT |
10µs |
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D.C.≤ 1% |
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--5V |
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G |
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P.G |
50W |
S |
CPH5804 |
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(MOSFET) |
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100mA |
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10mA |
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100mA |
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trr
No.6980-2/5
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