Sanyo CPH5802 Specifications

Ordering number : ENN6899

CPH5802

MOSFET : P-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

CPH5802

DC / DC Converter Applications

Features

•Composite type with a P-Channel Sillicon MOSFET (MCH3306) and a Schottky Barrier Diode (SBS004)

contained in one package facilitating high-density mounting.

[MOSFET]

•Low ON-resistance.

•Ultrahigh-speed switching.

•Ultralow voltage drive (1.8V drive).

[SBD]

•Short reverse recovery time.

•Low forward voltage.

Package Dimensions

unit : mm

2171

[CPH5802]

	2.9			0.15		0.2
5	4	3
		0.6
		1.6	2.8			0.05
		0.6
1		2
	0.95	0.4		1	: Cathode
				2	: Drain
		0.2		3	: Gate
				4	: Source
		0.7	0.9
				5	: Anode

0.4SANYO : CPH5

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter	Symbol	Conditions	Ratings	Unit
[MOSFET]
Drain-to-Source Voltage	VDSS		--20	V
Gate-to-Source Voltage	VGSS		±10	V
Drain Current (DC)	ID		--2	A
Drain Current (Pulse)	IDP	PW≤10μs, duty cycle≤1%	--8	A
Allowable Power Dissipation	PD	Mounted on a ceramic board (600mm2 0.8mm) 1unit	0.9	W
Channel Temperature	Tch		150	°C
Storage Temperature	Tstg		--55 to +125	°C
[SBD]
Repetitive Peak Reverse Voltage	VRRM		15	V
Nonrepetitive Peak Reverse Surge Voltage	VRSM		15	V
Average Output Current	IO		1	A
Surge Forward Current	IFSM	50Hz sine wave, 1 cycle	10	A
Junction Temperature	Tj		--55 to +125	°C
Storage Temperature	Tstg		--55 to +125	°C

Marking : QC

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

12201 TS IM TA-3048 No.6899-1/5

CPH5802

Electrical Characteristics at Ta=25°C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
[MOSFET]
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=--1mA, VGS=0	--20			V
Zero-Gate Voltage Drain Current	IDSS	VDS=--20V, VGS=0			--10	mA
Gate-to-Source Leakage Current	IGSS	VGS=±8V, VDS=0			±10	mA
Cutoff Voltage	VGS(off)	VDS=--10V, ID=--1mA	--0.3		--1.0	V
Forward Transfer Admittance	½yfs½	VDS=--10V, ID=--1A	2.1	3.0		S
	RDS(on)1	ID=--1A, VGS=--4V		110	145	mW
Static Drain-to-Source On-State Resistance	RDS(on)2	ID=--0.5A, VGS=--2.5V		140	200	mW
	RDS(on)3	ID=--0.1A, VGS=--1.8V		180	260	mW
Input Capacitance	Ciss	VDS=--10V, f=1MHz		410		pF
Output Capacitance	Coss	VDS=--10V, f=1MHz		60		pF
Reverse Transfer Capacitance	Crss	VDS=--10V, f=1MHz		40		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit		9		ns
Rise Time	tr	See specified Test Circuit		27		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit		42		ns
Fall Time	tf	See specified Test Circuit		38		ns
Total Gate Charge	Qg	VDS=--10V, VGS=--10V, ID=--2A		10		nC
Gate-to-Source Charge	Qgs	VDS=--10V, VGS=--10V, ID=--2A		0.6		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=--10V, VGS=--10V, ID=--2A		1.2		nC
Diode Forward Voltage	VSD	IS=--2A, VGS=0		--0.88	--1.2	V
[SBD]
Reverse Voltage	VR	IR=1mA	15			V
Forward Voltage	VF1	IF=0.5A		0.30	0.35	V
	VF2	IF=1A		0.35	0.40	V
Reverse Current	IR	VR=6V			500	mA
Interterminal Capacitance	C	VR=10V, f=1MHz, 1 cycle		42		pF
Reverse Recovery Time	trr	IF=IR=100mA, See specified Test Circuit.			15	ns
Thermal Resistance	Rth(j-a)	Mounted on a ceramic board (600mm2 0.8mm)		110		°C / W

Electrical Connection (Top view)

A S G

C D

Switching Time Test Circuit				trr Test Circuit
[MOSFET]				[SBD]
VIN		VDD= --10V		Duty≤ 10%
0V
--4V
	VIN		ID= --1A	50Ω	100Ω	10Ω
			RL= --10W
PW=10ms		D	VOUT	10µs
D.C.≤ 1%					--5V
	G
			CPH5802
P.G	50W	S	(MOSFET)

100mA
							10mA
100mA

trr

No.6899-2/5