SANYO CPH5801 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC/DC Converter Applications
Ordering number:EN6427
CPH5801
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· The CPH5801 composite device consists of following two devices to facilitate high-density mounting.
One is an N-channel MOSFET that features low ON
resistance, high-speed switching, and low driving
voltage. The other is a shottky barrier diode that
features short reverse recovery time and low forward
voltage.
· Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]TEFSOM[
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 521+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCtuptuOegarevAI
tnerruCegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
SSD
SSG
D
PD
Mounted on a ceramic board (600mm2×0.8mm) 1unit
D
MRR
MSR
O
MSF
Package Dimensions
unit:mm
2171
2.9
12
WP ≤ elcycytud,sµ01 ≤ %16.5A
elcyc1,evaweniszH05 01A
[CPH5801]
345
0.40.95
0.4
0.15
2.8
1.6 0.60.6
0.2
0.9
0.7
0.2
0.05
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
02V
01±V
4.1A
9.0W
˚C
˚C
03V
03V
1A
˚C
˚C
30300TS (KOTO) TA-2491 No.6427–1/5
CPH5801
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]TEFSOM[
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
]DBS[
egatloVesreveRV
egatloVdrawroF
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRt
ecnatsiseRlamrehTa-jhtR 011
Marking : QA
I
SSD)RB(
V
SSD
V
SSG
)ffo(VSDI,V01=
SG
1)no(IDV,Am007=
SD
2)no(IDV,Am004=
SD
)no(d
r
)ffo(d
f
I
DS
IRAm1=03V
R
VF1IFA5.0=53.04.0V
VF2IFA2=24.074.0V
VRV51= 005Aµ
R
IFI=
rr
V,Am1=
D
SD
SG
SD
SD
SD
S
R
R
0=02V
SG
V,V02=
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
Am1=4.03.1V
D
Am007=8.15.2S
D
V4=002062mΩ
SG
V5.2=062063mΩ
SG
zHM1=f,V01=09Fp
zHM1=f,V01=06Fp
zHM1=f,V01=82Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,A4.1=
SG
D
0=9.02.1V
elcyczHM1=f,V01=53Fp
sgnitaR
nimpytxam
A4.1=6Cn
A4.1=1Cn
A4.1=2Cn
.tiucriCtseTdeificepseeS,Am001= 51sn
tinU
˚C/WMounted on a ceramic board (600mm2×0.8mm)
Electrical Connection (Top view)
ASG
CD
Switching Time Test Circuit Reverse Recovery Time Test Circuit
[MOSFET block] [SBD block]
VDD=10V
V
4V
0V
PW=10µs
D.C.≤1%
P.G
IN
V
IN
G
50Ω
ID=700mA
RL=14.3Ω
D
CPH5801
S
V
OUT
Duty≤10%
10µs
100mA100mA
50Ω 100Ω 10Ω
--5V
10mA
trr
No.6427–2/5
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