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SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7025
CPH5706
TR : PNP Epitaxial Planar Silicon Transistor
SBD : Schottky Barrier Diode
CPH5706
DC / DC Converter Applications
Features
•
Composite type with a PNP transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.
• The CPH5706 consists of two chips which are
equivalent to the CPH3115 and the SBS006,
respectively.
• Ultraminiature package facilitates miniaturization in
Package Dimensions
unit : mm
2156
2.9
[CPH5706]
345
1.6 0.60.6
2.8
0.15
0.2
0.05
end products.(0.9mm)
12
Specifications
0.40.95
0.4
0.2
0.7
0.9
1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode
SANYO : CPH5
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[TR]
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage V
Non-repetitive Peak Reverse Surge Voltage V
Average Recified Current I
Surge Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature T stg --55 to +125 °C
Marking : PF
CBO
CEO
EBO
C
CP
B
C
RRM
RSM
O
FSM
Mounted on a ceramic board (600mm2✕0.8mm) 0.9 W
50Hz sine wave, 1cycle 10 A
--30 V
--30 V
--5 V
--1.5 A
--3 A
--300 mA
30 V
30 V
0.7 A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
92001 TS IM TA-3288
GI IM
No.7025-1/5
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Electrical Characteristics at Ta=25°C
CPH5706
Parameter Symbol Conditions
[TR]
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=--10V, f=1MHz 9 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--750mA, IB=--15mA --250 --375 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=--750mA, IB=--15mA --0.85 --1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
[SBD]
Reverse Voltage V
Forward Voltage VF2I
Reverse Current I
Interterminal Capacitance C VR=10V, f=1MHz 20 pF
Reverse Recovery Time t
CBO
EBO
FE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
VF1I
VF3I
R
VCB=--30V, IE=0 --0.1 µA
VEB=--4V, IC=0 --0.1 µA
VCE=--2V, IC=--100mA 200 560
VCE=--10V, IC=--300mA 450 MHz
T
=--10µA, IE=0 --30 V
=--1mA, RBE=∞ --30 V
=--10µA, IC=0 --5 V
See specified Test Circuit 30 ns
See specified Test Circuit 115 ns
See specified Test Circuit 30 ns
f
IR=0.5mA 30 V
R
rr
=0.3A 0.35 0.40 V
F
=0.5A 0.42 0.47 V
F
=0.7A 0.5 0.55 V
F
VR=10V 200 µA
IF=IR=100mA, See specified Test Circuit 10 ns
Ratings
min typ max
Electrical Connection
Unit
AEB
CC
(Top view)
Switching Time Test Circuit trr Test Circuit
[TR] [SBD]
PW=20µs
D.C.≤1%
INPUT
V
50Ω
R
VBE=5V
--20IB1= 20IB2= IC= --750mA
I
B2
I
B1
R
B
+
220µF 470µF
OUTPUT
R
L
+
VCC= --12V
Duty≤10%
10µs
50Ω 100Ω 10Ω
--5V
100mA100mA
10mA
t
rr
No.7025-2/5