Sanyo CPH5706 Specifications

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN7025

CPH5706

TR : PNP Epitaxial Planar Silicon Transistor

SBD : Schottky Barrier Diode

CPH5706

DC / DC Converter Applications

Features

•

Composite type with a PNP transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.

• The CPH5706 consists of two chips which are

equivalent to the CPH3115 and the SBS006,
respectively.

• Ultraminiature package facilitates miniaturization in

Package Dimensions

unit : mm

2156

2.9

[CPH5706]

345

1.6 0.60.6

2.8

0.15

0.2

0.05

end products.(0.9mm)

12

Specifications

0.40.95

0.4

0.2

0.7

0.9

1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode

SANYO : CPH5

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
[TR]
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage V
Non-repetitive Peak Reverse Surge Voltage V
Average Recified Current I
Surge Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature T stg --55 to +125 °C

Marking : PF

CBO
CEO
EBO

C

CP

B

C

RRM
RSM

O

FSM

Mounted on a ceramic board (600mm2✕0.8mm) 0.9 W

50Hz sine wave, 1cycle 10 A

--30 V

--30 V

--5 V

--1.5 A

--3 A

--300 mA

30 V
30 V

0.7 A

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

92001 TS IM TA-3288

GI IM

No.7025-1/5

Electrical Characteristics at Ta=25°C

CPH5706

Parameter Symbol Conditions
[TR]

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=--10V, f=1MHz 9 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--750mA, IB=--15mA --250 --375 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=--750mA, IB=--15mA --0.85 --1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
[SBD]
Reverse Voltage V

Forward Voltage VF2I

Reverse Current I
Interterminal Capacitance C VR=10V, f=1MHz 20 pF
Reverse Recovery Time t

CBO
EBO

FE

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

VF1I

VF3I

R

VCB=--30V, IE=0 --0.1 µA
VEB=--4V, IC=0 --0.1 µA
VCE=--2V, IC=--100mA 200 560
VCE=--10V, IC=--300mA 450 MHz

T

=--10µA, IE=0 --30 V
=--1mA, RBE=∞ --30 V

=--10µA, IC=0 --5 V
See specified Test Circuit 30 ns
See specified Test Circuit 115 ns
See specified Test Circuit 30 ns

f

IR=0.5mA 30 V

R

rr

=0.3A 0.35 0.40 V

F

=0.5A 0.42 0.47 V

F

=0.7A 0.5 0.55 V

F

VR=10V 200 µA

IF=IR=100mA, See specified Test Circuit 10 ns

Ratings

min typ max

Electrical Connection

Unit

AEB

CC

(Top view)

Switching Time Test Circuit trr Test Circuit

[TR] [SBD]

PW=20µs
D.C.≤1%

INPUT

V

50Ω

R

VBE=5V

--20IB1= 20IB2= IC= --750mA

I

B2

I

B1

R

B

+

220µF 470µF

OUTPUT

R

L

+

VCC= --12V

Duty≤10%

10µs

50Ω 100Ω 10Ω

--5V

100mA100mA

10mA

t

rr

No.7025-2/5

--2.0

--1.8

--1.6

--1.4

-- A
C

--1.2

--1.0

--0.8

--0.6

Collector Current, I

--0.4

--0.2
0

0 --0.2--0.1 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0

1000

7
5

Ta=75°C

3

FE

DC Current Gain, h

V

--

(sat)

CE

Collector-to-Emitter

Saturation V oltage, V

Output Capacitance, Cob -- pF

25°C

2

--25°C

100

7
5

3
2

10

--0.01 --1.0--0.1

2

IC / IB=50

--1.0
7

5

3
2

--0.1
7
5

3

Ta= --25°C

2

--0.01

--0.01 --1.0--0.1

100

7
5

3

2

10

7
5

3
2

23 57

0.1 1.0

I

-- V

C

CE

--8mA

Collector-to-Emitter Voltage, VCE -- V

h

FE -- IC

23 57

23 57 23

Collector Current, IC -- A

VCE(sat) -- I

C

75°C

25°C

23 57

23 57 23

Collector Current, IC -- A

Cob -- V

Collector-to-Base Voltage, V

CB

23 571023 5

CB

CPH5706

[TR] [TR]

--50mA

--40mA

--30mA

--20mA

--10mA

--6mA

--4mA

--2mA

IB=0

IT03023 IT03024

[TR]

VCE= --2V

--1.6

--1.4

--1.2

-- A
C

--1.0

--0.8

--0.6

--0.4

Collector Current, I

--0.2

0

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2

Base-to-Emitter V oltage, V

--1.0
7
5

V

--

3

(sat)

2

CE

--0.1
7
5

3
2

Collector-to-Emitter

Saturation V oltage, V

--0.01

IT03025

[TR] [TR]

IT03027

[TR]

f=1MHz

-- V

IT03029

--0.01 --1.0--0.1

--10
7
5

V

--

3

(sat)

2

BE

--1.0
7

5

3
2

Base-to-Emitter

Saturation V oltage, V

--0.1

--0.01 --1.0--0.1

3
2

MHz

1000

--

7

T

5

3
2

100

7
5

Gain-Brandwidth Product, f

3
2

--0.01 --1.0--0.1

Ta=75°C

23 57

Ta= --25°C

75°C

23 57

23 57 23 257

I

C -- VBE

25°C

Ta=75°C

VCE(sat) -- I

--25°C

Collector Current, IC -- A

25°C

23 57 23

VBE(sat) -- I

25°C

Collector Current, IC -- A

Collector Current, IC -- A

23 57 23

f

T -- IC

C

--25°C

BE --

C

VCE= --2V

V

[TR]

IC / IB=20

IT03026

IC / IB=50

IT03028

[TR]

VCE= --10V

IT03030

No.7025-3/5

--10
7
5

ICP= --3A

3

IC= --1.5A

2

-- A

--1.0

C

7
5

3
2

--0.1
7

Collector Current, I

5
3

Ta=25°C

2

Single pulse
Mounted on a ceramic board(600mm2✕0.8mm)

--0.01
23 57 23 57 23 57

--0.1

Collector-to-Emitter Voltage, V

2

1.0
7
5

-- A

3

F

2

0.1
7
5

Forward Current, I

3
2

0.01
0 0.2 0.4 0.6

0.7

-- W

(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°

0.6

(3)Rectangular wave θ=180°

(AV)

F

(4)Sine wave θ=180°

0.5

0.4

100°C

Ta=125°C

A S O

F

100µs

500µs

CE

-- V

O

(4)

(2)

1ms

10ms

100ms

DC operation

--1.0 --10 --100

I

-- V

F

F

25°C

50°C

75°C

Forward Voltage, V

PF(AV) -- I

(1)

CPH5706

[TR] [TR]

IT03031

-- V
[SBD]

IT03033

1.4

1.2

-- W

1.0

C

0.9

0.8

0.6

0.4

Collector Dissipation, P

0.2

0

0 20 40 60 80 100 120 140 160

Mounted on a ceramic board(600mm

Ambient Temperature, Ta -- °C

100

7
5

3
2

10

7

Ta=125°C

5

-- mA

3

R

2

1.0
7
5

3
2

0.1

Reverse Current, I

7
5

3
2

0.01
0 5 10 15 20 25 30

100°C

75°C

50°C

25°C

P

IR -- V

Reverse Voltage, V

[SBD]

(3)

C

--

Ta

R

-- V

R

2

✕0.8mm)

IT03032

[SBD]

IT03034

0.3

0.2

0.1

0

Average Forward Power Dissipation, P

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

Average Rectified Current, I

Rectangular
wave

Sine wave

180°

360°

-- A

O

θ

360°

IT03035

No.7025-4/5

CPH5706

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of September, 2001. Specifications and information herein are subject
to change without notice.

No.7025-5/5

PS