Sanyo CPH5706 Specifications

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN7025

CPH5706

TR : PNP Epitaxial Planar Silicon Transistor

SBD : Schottky Barrier Diode

CPH5706

DC / DC Converter Applications

Features

•

Composite type with a PNP transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.

• The CPH5706 consists of two chips which are

equivalent to the CPH3115 and the SBS006,
respectively.

• Ultraminiature package facilitates miniaturization in

Package Dimensions

unit : mm

2156

2.9

[CPH5706]

345

1.6 0.60.6

2.8

0.15

0.2

0.05

end products.(0.9mm)

12

Specifications

0.40.95

0.4

0.2

0.7

0.9

1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode

SANYO : CPH5

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
[TR]
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage V
Non-repetitive Peak Reverse Surge Voltage V
Average Recified Current I
Surge Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature T stg --55 to +125 °C

Marking : PF

CBO
CEO
EBO

C

CP

B

C

RRM
RSM

O

FSM

Mounted on a ceramic board (600mm2✕0.8mm) 0.9 W

50Hz sine wave, 1cycle 10 A

--30 V

--30 V

--5 V

--1.5 A

--3 A

--300 mA

30 V
30 V

0.7 A

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

92001 TS IM TA-3288

GI IM

No.7025-1/5

Electrical Characteristics at Ta=25°C

CPH5706

Parameter Symbol Conditions
[TR]

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=--10V, f=1MHz 9 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--750mA, IB=--15mA --250 --375 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=--750mA, IB=--15mA --0.85 --1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
[SBD]
Reverse Voltage V

Forward Voltage VF2I

Reverse Current I
Interterminal Capacitance C VR=10V, f=1MHz 20 pF
Reverse Recovery Time t

CBO
EBO

FE

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

VF1I

VF3I

R

VCB=--30V, IE=0 --0.1 µA
VEB=--4V, IC=0 --0.1 µA
VCE=--2V, IC=--100mA 200 560
VCE=--10V, IC=--300mA 450 MHz

T

=--10µA, IE=0 --30 V
=--1mA, RBE=∞ --30 V

=--10µA, IC=0 --5 V
See specified Test Circuit 30 ns
See specified Test Circuit 115 ns
See specified Test Circuit 30 ns

f

IR=0.5mA 30 V

R

rr

=0.3A 0.35 0.40 V

F

=0.5A 0.42 0.47 V

F

=0.7A 0.5 0.55 V

F

VR=10V 200 µA

IF=IR=100mA, See specified Test Circuit 10 ns

Ratings

min typ max

Electrical Connection

Unit

AEB

CC

(Top view)

Switching Time Test Circuit trr Test Circuit

[TR] [SBD]

PW=20µs
D.C.≤1%

INPUT

V

50Ω

R

VBE=5V

--20IB1= 20IB2= IC= --750mA

I

B2

I

B1

R

B

+

220µF 470µF

OUTPUT

R

L

+

VCC= --12V

Duty≤10%

10µs

50Ω 100Ω 10Ω

--5V

100mA100mA

10mA

t

rr

No.7025-2/5