Sanyo CPH5705 Specifications

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6591

Features

•

Composite type with a PNP transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.

• The CPH5705 consists of two chips which are

equivalent to the CPH3109 and the SBS004, respec­tively.

• Ultrasmall package facilitates miniaturization in end

products.

Specifications

Absolute Maximum Ratings at T a=25°C

CPH5705

TR : PNP Epitaxial Planar Silicon Transistor

SBD : Sohottky Barrier Diode

CPH5705

DC / DC Converter Applications

Package Dimensions

unit : mm

2156

[CPH5705]

2.9

345

1.6 0.60.6

12

0.40.95

0.2

0.7

0.4

0.15

2.8

0.9

0.2

0.05

1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode

SANYO : CPH5

Parameter Symbol Conditions Ratings Unit
[TR]
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage V
Non-repetitive Peak Reverse Surge Voltage
Average Output Current I
Surge Forward Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature T stg --55 to +125 °C

Marking : PE

V

CBO
CEO
EBO

C

CP

B

C

RRM
RSM

O

FSM

Mounted on a ceramic board (600mm2✕0.8mm) 0.9 W

50Hz sine wave, 1cycle 10 A

--30 V

--30 V

--5 V

--3 A

--5 A

--600 mA

15 V
15 V

1A

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

61500 TS IM TA-2903

No.6591-1/5

Electrical Characteristics at T a=25 °C

CPH5705

Parameter Symbol Conditions

[TR]
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Output Capacitance Cob VCB=--10V, f=1MHz 25 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--1.5A, IB=--30mA --155 --230 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=--1.5A, IB=--30mA --0.83 --1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
[SBD]
Reverse Voltage V

Forward Voltage
Reverse Current I

Interterminal Capacitance C VR=10V, f=1MHz 42 pF
Reverse Recovery Time t
Thermal Resistance Rth j-a

CBO
EBO

FE

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

VF1I
VF2I

VCB=--12V, IE=0 --0.1 µA
VEB=--4V, IC=0 --0.1 µA
VCE=--2V, IC=--0.5A 200 560
VCE=--2V, IC=--0.5A 380 MHz

T

=--10µA, IE=0 --30 V
=--1mA, RBE=∞ --30 V

=--10µA, IC=0 --5 V
See specified Test Circuit 50 ns
See specified Test Circuit 270 ns
See specified Test Circuit 25 ns

f

IR=1mA 15 V

R

R

rr

=0.5A 0.30 0.35 V

F

=1A 0.35 0.40 V

F

VR=6V 500 µA

IF=IR=100mA, See specified Test Circuit 15 ns
Mounted on a ceramic board (600mm2✕0.8mm)

Ratings

min typ max

110 °C/W

Electrical Connection

Unit

AEB

CC

(Top view)

Switching Time Test Circuit trr Test Circuit

[TR][

I

PW=20µs
D.C.≤1%

INPUT

50Ω

–20IB1= 20IB2= IC= –1.5A

B2

I

B1

R

B

V

R

++

220µF 470µF

VBE=5V

OUTPUT

R

VCC= –5V

L

]

SBD

Duty≤10%

10µs

50Ω

–5V

100Ω

100mA100mA

10Ω

10mA

t

rr

No.6591-2/5

--2.0

--30mA

--40mA

--1.6

-- A
C

--1.2

--0.8

Collector Current, I

--0.4

--50mA

0

0 --400 --1000--800--600--200

Collector-to-Emitter Voltage, VCE -- mV

1000

7
5

3

FE

2

--20mA

Ta=75°C

25°C

--25°C

I

C

h

FE

-- V

-- I

CE

C

CPH5705

--10mA

--8mA

--6mA

--4mA

--2mA

IB=0

IT02116

[TR]

VCE= --2V

--4.0

--3.5

--3.0

-- A
C

--2.5

--2.0

--1.5

--1.0

Collector Current, I

--0.5

0

0 --0.4 --1.2--0.8 --1.0--0.2 --0.6

Base-to-Emitter V oltage, VBE -- V

1000

7
5

3

-- MHz
T

2

I

C

f

T

-- V

-- I

BE

Ta=75°C

C

25°C

[TR][TR]

VCE= --2V

--25°C

IT02117

[TR]

VCE= --10V

100

7
5

DC Current Gain, h

3
2

10

777

325 325

Collector Current, IC -- A

2

100

7

5

3

2

Output Capacitance, Cob -- pF

10

--1.0 --10

372

Collector-to-Base Voltage, VCB -- V

--10
7
5

3
2

(sat) -- V

--1.0
7

CE

5
3

2

--0.1
7
5

3

Collector-to-Emitter

Saturation V oltage, V

2

--0.01
23 5 23 5

Collector Current, IC -- A

325

--0.1

Cob -- V

--1.0

CB

--10--0.01

IT02118

[TR]

f=1MHz

5532

VCE(sat) -- I

C

IT02120

[TR]

IC / IB=50

Ta=75°C

25°C

--25°C

--0.1

23 5777

--1.0

--10--0.01

IT02122

100

7
5

3
2

Gain-Bandwidth Product, f

10

--1.0

(sat) -- V

--0.1

CE

--0.01

Collector -to-Emitter

Saturation V oltage, V

--0.001

--10

(sat) -- V

BE

--1.0

Base-to-Emitter

Saturation V oltage, V

--0.1

2537 2 53237

7
5

3
2

7
5

3
2

7
5

3
2

23 5 23 5

7
5

3
2

7
5

3
2

--100--10

Collector Current, IC -- mA

VCE(sat) -- I

Ta=75°C

--25°C

--0.1

C

25°C

--1.0

Collector Current, IC -- A

VBE(sat) -- I

C

Ta= --25°C

75°C

25°C

--1.0

Collector Current, IC -- A

--1000

IT02119

[TR]

IC / IB=20

23 5777

--10--0.01

IT02121

[TR]

IC / IB=50

23 5723 5723 57

--10--0.1--0.01

IT02123

No.6591-3/5

--10
7

ICP= --5A

5

IC= --3A

3
2

-- A

--1.0

C

7
5

3
2

--0.1
7
5

Collector Current, I

3

Ta=25°C

2

Single pulse

Mounted on ceramic board (600mm2✕0.8mm)

--0.01

--0.1

10

7
5

3
2

-- A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01

537253725372

Collector-to-Emitter Voltage, V

Ta=125°C

A S O

100ms

DC operation

--1.0 --10 --100

IF -- V

100°C

50°C

25°C

0.2 0.3 0.50.40.10

Forward Voltage, V

0.8

-- W

qRectangular wave θ=60°
wRectangular wave θ=120°

0.7

(AV)

eRectangular wave θ=180°

F

rSine wave θ=180°

0.6

0.5

0.4

0.3

0.2

0.1

0

0

Average Forward Power Dissipation, P

0.2

PF(AV) -- I

q

0.4 0.6 1.41.21.00.8

Average Rectified Current, I

1ms

10ms

F

75°C

F

O

-- V

w

100µs

500µs

-- V

CE

r

e

Rectangular
wave

Sine wave

180°

-- A

O

CPH5705

[TR] [TR]

IT02124

[SBD]

IT02126

1.0

0.9

0.8

-- W

0.7

C

0.6

0.5

0.4

0.3

0.2

Collector Dissipation, P

0.1
0

2006040 80 100 140120 160

Ambient Tamperature, Ta -- °C

100

7
5

3
2

10

7
5

-- mA

3

R

2

1.0
7
5

3
2

0.1

Reverse Current, I

7
5

3
2

0.01
0

Ta=

125

100

°C

°C

75°C

50°C

25°C

[SBD]

θ

360°

360°

IT02128

P

-- Ta

C

Mounted on a ceramic board (600mm

2

✕0.8mm)

I

-- V

R

R

51015

Reverse Voltage, VR -- V

IT02125

[SBD]

IT02127

No.6591-4/5

CPH5705

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.

No.6591-5/5

PS