Sanyo CPH5705 Specifications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6591
Features
•
Composite type with a PNP transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.
• The CPH5705 consists of two chips which are
equivalent to the CPH3109 and the SBS004, respectively.
• Ultrasmall package facilitates miniaturization in end
products.
Specifications
Absolute Maximum Ratings at T a=25°C
CPH5705
TR : PNP Epitaxial Planar Silicon Transistor
SBD : Sohottky Barrier Diode
CPH5705
DC / DC Converter Applications
Package Dimensions
unit : mm
2156
[CPH5705]
2.9
345
1.6 0.60.6
12
0.40.95
0.2
0.7
0.4
0.15
2.8
0.9
0.2
0.05
1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode
SANYO : CPH5
Parameter Symbol Conditions Ratings Unit
[TR]
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage V
Non-repetitive Peak Reverse Surge Voltage
Average Output Current I
Surge Forward Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature T stg --55 to +125 °C
Marking : PE
V
CBO
CEO
EBO
C
CP
B
C
RRM
RSM
O
FSM
Mounted on a ceramic board (600mm2✕0.8mm) 0.9 W
50Hz sine wave, 1cycle 10 A
--30 V
--30 V
--5 V
--3 A
--5 A
--600 mA
15 V
15 V
1A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
61500 TS IM TA-2903
No.6591-1/5
Electrical Characteristics at T a=25 °C
CPH5705
Parameter Symbol Conditions
[TR]
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Output Capacitance Cob VCB=--10V, f=1MHz 25 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--1.5A, IB=--30mA --155 --230 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=--1.5A, IB=--30mA --0.83 --1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
[SBD]
Reverse Voltage V
Forward Voltage
Reverse Current I
Interterminal Capacitance C VR=10V, f=1MHz 42 pF
Reverse Recovery Time t
Thermal Resistance Rth j-a
CBO
EBO
FE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
VF1I
VF2I
VCB=--12V, IE=0 --0.1 µA
VEB=--4V, IC=0 --0.1 µA
VCE=--2V, IC=--0.5A 200 560
VCE=--2V, IC=--0.5A 380 MHz
T
=--10µA, IE=0 --30 V
=--1mA, RBE=∞ --30 V
=--10µA, IC=0 --5 V
See specified Test Circuit 50 ns
See specified Test Circuit 270 ns
See specified Test Circuit 25 ns
f
IR=1mA 15 V
R
R
rr
=0.5A 0.30 0.35 V
F
=1A 0.35 0.40 V
F
VR=6V 500 µA
IF=IR=100mA, See specified Test Circuit 15 ns
Mounted on a ceramic board (600mm2✕0.8mm)
Ratings
min typ max
110 °C/W
Electrical Connection
Unit
AEB
CC
(Top view)
Switching Time Test Circuit trr Test Circuit
[TR][
I
PW=20µs
D.C.≤1%
INPUT
50Ω
–20IB1= 20IB2= IC= –1.5A
B2
I
B1
R
B
V
R
++
220µF 470µF
VBE=5V
OUTPUT
R
VCC= –5V
L
]
SBD
Duty≤10%
10µs
50Ω
–5V
100Ω
100mA100mA
10Ω
10mA
t
rr
No.6591-2/5
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