SANYO CPH5704 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
TR : NPN Epitaxial Planar Silicon Transistor
SBD : Schottky Barrier Diode
DC/DC Converter Applications
Ordering number:ENN6320
CPH5704
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2.9
Features
· Composite type with an NPN transistor and a
Schottky barrier diode contained in one package
facilitating high-density mounting.
· Each device incorporated in the CPH5704 is equivalent to the CPH3206 and to the SBS004, respectively.
· Ultrasmall package facilitates miniaturization in end
products.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 521+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCtuptuOegarevAI
tnerruCegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
OBC
OEC
OBE
C
PC
B
Mounted on a ceramic board (600mm2×0.8mm)
C
MRR
MSR
O
MSF
Package Dimensions
unit:mm
2156
[CPH5704]
345
1.6 0.60.6
12
0.40.95
0.2
0.7
0.4
elcyc1,evaweniszH05 01A
0.15
2.8
0.9
0.2
0.05
1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode
SANYO : CPH5
51V
51V
5V
3A
5A
006Am
9.0W
˚C
˚C
51V
51V
1A
˚C
˚C
70500TS (KOTO) TA-2784 No.6320–1/5
CPH5704
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSrettimE-ot-rotcelloC
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
]DBS[
egatloVesreveRV
egatloVdrawroF
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRt
ecnatsiseRlamrehTa-jhtR 011
h
V
VF1IFA5.0=03.053.0V
VF2IFA1=53.004.0V
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
IRAm1=51V
R
VRV6= 005Aµ
R
R
IFI=
rr
I,V21=
BC
BE
EC
EC
BC
R
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
I,V2=
A5.0=
C
I,V2=
A5.0=
C
zHM1=f,V01=
I,A5.1=
Am03=
B
I,A5.1=
Am03=58.02.1V
B
I,Aµ01=
0=51V
E
R,Am1=
=∞ 51V
EB
I,Aµ01=
0=5V
C
zHM1=f,V01=24Fp
sgnitaR
nimpytxam
002065
083zHM
32Fp
001051Vm
.tiucriCtseTdeificepseeS03sn
.tiucriCtseTdeificepseeS012sn
.tiucriCtseTdeificepseeS11sn
.tiucriCtseTdeificepseeS,Am001= 51sn
tinU
˚C/WMounted on a ceramic board (600mm2×0.8mm)
Electrical Connection
AEB
CC
(Top view)
Switching Time Test Circuit
[TR] [SBD]
I
V
R
VBE=–5V
I
B1
B2
1kΩ
+
220µF 470µF
+
VCC=5V
OUTPUT
R
L
PW=20µs
D.C.≤1%
INPUT
50Ω
20IB1= –20IB2= IC=1.5A
Duty≤10%
10µs
50Ω
–5V
100Ω
10Ω
100mA100mA
10mA
t
rr
No.6320–2/5
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