SANYO CPH5703 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

TR : NPN Silicon Epitaxial Planar Transistor

SBD : Schottky Barrier Diode

DC/DC Converter Applications

Ordering number:ENN6092

CPH5703

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

2.9

Features

· Composite type with a NPN transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.

· The CPH5703 consists of two chips encapsulated in a
package which are equivalent to the CPH3205 and
the SB05-05CP, respectively.

· Ultrasmall-sized package permitting applied sets to
be made small and slim (0.9mm).

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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OBC
OEC
OBE

C

PC

B

Mounted on a ceramic board (600mm2×0.8mm)

C

MRR
MSR

O

MSF

Package Dimensions

unit:mm

2156

[CPH5703]

345

1.6 0.60.6

12

0.40.95

0.2

0.7

0.4

elcyc1,evaweniszH05 5A

0.15

2.8

0.9

0.2

0.05

1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode
SANYO : CPH5

06V
05V
6V
3A
6A
006Am

9.0W

˚C
˚C

05V
55V
005Am

˚C
˚C

71299TS (KOTO) TA-1726 No.6092–1/5

Electrical Characteristics at Ta = 25˚C

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V
V

Electrical Connection (Top view)

54

CPH5703

sgnitaR

nimpytxam

V

OBC

V

OBE

h

3

V

EF

V

T

1ICI,A0.1=

)tas(EC

2ICI,A0.2=

)tas(EC

I

)tas(EB

C

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E
no
gts

f

I

R

R

I

F

F

VRV52= 05Aµ

R

R

IFI=

rr

I,V04=

BC
BE
EC
EC
BC

R

0=1Aµ

E

I,V4=

0=1Aµ

C

I,V2=

Am001=

C

I,V01=

Am005=

C

zHM1=f,V01=

Am05=

B

Am001=

B

I,A0.1=

Am05=9.02.1V

B
I,Aµ01=

0=06V

E

R,Am1=

=∞ 05V

EB

I,Aµ01=

0=6V

C

Aµ002=05V

Am005= 55.0V

.tiucriCtseTdeificepseeS53sn
.tiucriCtseTdeificepseeS003sn
.tiucriCtseTdeificepseeS22sn

zHM1=f,V01=22Fp

.tiucriCtseTdeificepseeS,Am001= 01sn

002065

083zHM
31Fp
08021Vm
041012Vm

tinU

˚C/WMounted on a ceramic board (600mm2×0.8mm)

1

Switching Time Test Circuit

(TR)

PW=20µs
D.C.≤1%

10I

(For PNP, the polarity is reversed.)

(SBD)

Duty≤10%

INPUT

=–10IB2=IC=1A

B1

50Ω

VBE=–5V

I

B1

I

B2

R

B

V

R

+

100µF 470µF

1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode

2

OUTPUT

R

L

+

VCC=25V

10µs

50Ω

–5V

100Ω

10Ω

100mA

100mA

10mA

t

rr

No.6092–2/5