SANYO CPH5702 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

TR : NPN Silicon Epitaxial Planar Transistor

SBD : Schottky Barrier Diode

DC/DC Converter Applications

Ordering number:ENN6091

CPH5702

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

2.9

Features

· Composite type with a NPN transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.

· The CPH5702 consists of two chips encapsulated in a
package which are equivalent to the CPH3209 and
the SB07-03C, respectively.

· Ultrasmall-sized package permitting applied sets to
be made small and slim (0.9mm).

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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tnerruCesaBI

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erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 521+ot55–

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OBC
OEC
OBE

C

PC

B

Mounted on a ceramic board (600mm2×0.8mm)

C

MRR
MSR

O

MSF

Package Dimensions

unit:mm

2156

[CPH5702]

345

1.6 0.60.6

12

0.40.95

0.2

0.7

0.4

elcyc1,evaweniszH05 5A

0.15

2.8

0.9

0.2

0.05

1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode
SANYO : CPH5

04V
03V
5V
3A
5A
006Am

9.0W

˚C
˚C

03V
53V
007Am

˚C
˚C

71299TS (KOTO) TA-1726 No.6091–1/5

Electrical Characteristics at Ta = 25˚C

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V
V

Electrical Connection (Top view)

54

CPH5702

sgnitaR

nimpytxam

V

OBC

V

OBE

h

3

V

EF

V

T

1ICI,A5.1=

)tas(EC

2ICI,A5.1=

)tas(EC

I

)tas(EB

C

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E
no
gts

f

I

R

R

I

F

F

VRV51= 08Aµ

R

R

IFI=

rr

I,V02=

BC
BE
EC
EC
BC

R

0=1.0Aµ

E

I,V4=

0=1.0Aµ

C

I,V2=

Am005=

C

I,V01=

Am005=

C

zHM1=f,V01=

Am03=

B

Am57=

B

I,A5.1=

Am03=38.02.1V

B
I,Aµ01=

0=04V

E

R,Am1=

=∞ 03V

EB

I,Am1=

0=5V

C

Aµ003=03V

Am007= 55.0V

.tiucriCtseTdeificepseeS03sn
.tiucriCtseTdeificepseeS003sn
.tiucriCtseTdeificepseeS51sn

elcyczHM1=f,V01=82Fp

.tiucriCtseTdeificepseeS,Am001= 01sn

002065

054zHM
02Fp
021581Vm
501551Vm

tinU

˚C/WMounted on a ceramic board (600mm2×0.8mm)

1

Switching Time Test Circuit

(TR)

PW=20µs
D.C.≤1%

20I

(For PNP, the polarity is reversed.)

(SBD)

Duty≤10%

INPUT

50Ω

=–20IB2=IC=500mA

B1

VBE=–5V

2

I

B1

I

B2

R

B

V

R

++

100µF 470µF

1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode

R

L

VCC=12V

OUTPUT

10µs

50Ω

–5V

100Ω

10Ω

100mA

100mA

10mA

t

rr

No.6091–2/5