Page 1
Ordering number : ENN7154
CPH5611
N-Channel Silicon MOSFET
CPH5611
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
2.5V drive.
•
Composite type with 2 MOSFETs contained in a
single package, facilitaing high-density mounting.
Package Dimensions
unit : mm
2168
[CPH5611]
2.9
345
1.6 0.60.6
12
0.40.95
2.8
0.15
0.05
1 : Drain1
0.2
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
Specifications
0.4
0.2
0.7
0.9
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 12 A
Mounted on a ceramic board (600mm2✕0.8mm)1unit
20 V
±10 V
3A
0.9 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=1.5A, VGS=4V 54 70 mΩ
RDS(on)2 ID=0.7A, VGS=2.5V 73 102 mΩ
=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA
VDS=10V, ID=1.5A 3.4 4.8 S
min typ max
Marking : FR Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41002 TS IM TA-3487
No.7154-1/4
Page 2
CPH5611
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V, f=1MHz 280 pF
Output Capacitance Coss VDS=10V, f=1MHz 60 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 38 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 35 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=4V, ID=3A 8.8 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=3A 0.85 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=3A 0.85 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 35 ns
r
See specified Test Circuit. 25 ns
f
IS=3A, VGS=0 0.84 1.2 V
min typ max
Electrical Connection Switching Time Test Circuit
5
12
34
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
Top view
V
4V
0V
PW=10µs
D.C.≤1%
IN
V
IN
G
Ratings
VDD=10V
ID=1.5A
RL=6.67Ω
D
V
OUT
Unit
3.0
2.5
2.5V
1.8V
D
1.5V
DS
I
-- V
4.0V
-- A
2.0
D
10.0V
1.5
1.0
=1.0V
V
GS
Drain Current, I
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source V oltage, V
160
140
120
(on) -- mΩ
100
DS
80
ID=0.7A
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
0246810
RDS(on) -- V
1.5A
Gate-to-Source V oltage, V
DS
GS
GS
-- V
IT03490
Ta=25°C
-- V
IT04047 IT04048
Ta=75°C
S
GS
GS
CPH5611
--25°C
25°C
GS
=2.5V
=4.0V
GS
-- V
P.G
4.0
VDS=10V
3.5
3.0
-- A
2.5
D
2.0
1.5
Drain Current, I
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
50Ω
I
D
-- V
Gate-to-Source V oltage, V
140
120
100
(on) -- mΩ
DS
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Ta
=0.7A, V
I
D
=1.5A, V
I
D
Ambient Temperature, Ta -- °C
IT03491
No.7154-2/4
Page 3
y
fs -- I
Forward Transfer Admittance, yfs -- S
Switching Time, SW Time -- ns
-- V
3
VDS=10V
2
10
7
5
3
2
1.0
7
5
3
2
0.1
23 57 23 57
Ta= --25
0.1
23 57
Drain Current, I
SW Time -- I
t
(off)
d
100
1.0
3
2
7
5
3
2
10
7
5
3
2
23 57
0.1
Drain Current, I
4.0
VDS=10V
ID=3A
3.5
3.0
VGS -- Qg
D
25°C
°C
°C
75
1.00.01
-- A
D
D
VDD=10V
VGS=
t
r
t
f
td(on)
1.0
23 57
-- A
D
GS
2.5
2.0
1.5
1.0
Gate-to-Source V oltage, V
0.5
0
012345678910
Total Gate Charge, Qg -- nC
P
-- Ta
1.0
0.9
-- W
0.8
D
Mounted on a ceramic board(600mm
D
CPH5611
10
IT03494
4V
10
IT03496
IT03498
I
-- V
F
25°C
--25°C
Ciss
Coss
Crss
A S O
SD
SD
DS
100ms
DC operation
2
✕0.8mm)1unit
1.0 100.10.01
DS
-- V
DS
f=1MHz
-- V
<10µs
100
1ms
10ms
-- V
10
7
5
3
2
-- A
1.0
F
7
5
3
2
0.1
7
Forward Current, I
5
3
2
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Ta=75°C
Diode Forward V oltage, V
1000
7
5
3
2
100
7
5
Ciss, Coss, Crss -- pF
3
2
10
02468101214161820
Ciss, Coss, Crss -- V
Drain-to-Source V oltage, V
2
I
=12A
DP
10
7
5
I
=3A
D
3
2
-- A
1.0
D
7
5
3
2
Operation in this
0.1
Drain Current, I
area is limited by RDS(on).
7
5
3
Ta=25°C
2
Single pulse
Mounted on a ceramic board(600mm
0.01
23 57 23 57 23 57
Drain-to-Source V oltage, V
VGS=0
IT03495
IT03497
µs
32
IT04049
0.6
0.4
0.2
2
✕0.8mm) 1unit
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04050
No.7154-3/4
Page 4
CPH5611
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2002. Specifications and information herein are subject
to change without notice.
No.7154-4/4
PS
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