SANYO CPH5608 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6442A
CPH5608
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
· Composite type with 2 MOSFETs contained in a
single package, facilitaing high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : FH
SSD
SSG
D
PD
D
SSD
SSG
R
)no(SD
R
)no(SD
Package Dimensions
unit:mm
2168
345
0.40.95
0.4
[CPH5608]
2.8
1.6 0.60.6
0.2
0.9
0.7
0.15
0.2
0.05
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
sgnitaR
nimpytxam
Continued on next page.
001V
01±V
4.0A
9.0W
2.9
12
WP ≤ elcycytud,sµ01 ≤ %16.1A
Mounted on a ceramic board (600mm2×0.8mm) 1unit
I
V,Am1=
SSD)RB(
D
V
V
V
)ffo(SG
1I
D
2I
D
SD
SG
SD
SD
SD
SD
0=001V
SG
V,V001=
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=5.05.1V
D
Am002=025057Sm
D
V,Am002=
V4=5.23.3
SG
V,Am001=
V5.2=7.28.3
SG
zHM1=f,V02=05Fp
zHM1=f,V02=51Fp
zHM1=f,V02=4Fp
˚C
˚C
tinU
Ω
Ω
60100TS (KOTO) TA-2881 No.6442-1/4
CPH5608
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
SG
SG
I
DS
S
SG
V,Am004=
SG
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn
I,V01=
D
I,V01=
D
I,V01=
D
0=0.12.1V
sgnitaR
nimpytxam
Am004=5Cn
Am004=1Cn
Am004=2Cn
tinU
Electrical Connection
G1 G2
0.40
0.35
0.30
–A
0.25
D
0.20
0.15
Drain Current, I
0.10
D1
S
D2
6.0V
8.0V
10.0V
I
D
(Top view)
-- V
DS
4.0V
3.0V
2.5V
VGS=1.5V
Switching Time Test Circuit
V
IN
4V
0V
V
IN
PW=10µs
D.C.≤1%
P.G
0.40
0.35
0.30
–A
0.25
D
0.20
0.15
Drain Current, I
0.10
VDS=10V
G
50Ω
VDD=50V
I
-- V
D
ID=200mA
RL=250Ω
D
CPH5608
S
GS
25°C
V
OUT
°C
--25
0.05
00
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS–V
5.0
4.5
4.0
– Ω
3.5
ID=0.1A
3.0
DS(on)
2.5
2.0
1.5
1.0
Static Drain-to-Source
On-State Resistance, R
0.5
00
012345678910
RDS(on) -- V
0.2A
Gate-to-Source Voltage, V
GS
GS
–V
IT01043
Ta=25°C
IT01045
0.05
00
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Ta=75°C
Gate-to-Source Voltage, VGS–V
5
– Ω
4
DS(on)
3
2
Static Drain-to-Source
On-State Resistance, R
1
--60 --40 --20 0 20 40 60 80 100 120 160140
RDS(on) -- Ta
=2.5V
GS
=0.1A, V
D
I
I
=0.2A, V
D
GS
=4.0V
Ambient Temperature, Ta – °C
IT01044
IT01046
No.6442-2/4
Loading...