Sanyo CPH5606 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel and P-Channel Silicon MOSFETs

Ultrahigh-Speed Switching Applications

Ordering number:ENN*6451

CPH5606

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Preliminary
Features

· The CPH5606 incorporates on N-channel MOSFET
and a P-channel MOSFET that feature low ON
resistance and high-speed switching, thereby en­abling high-density mounting.

· 4V drive.

Package Dimensions

unit:mm

2168

2.9

[CPH5606]

345

0.15

0.2

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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]lennahc-N[

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tnerruCniarDegatloVetaG-oreZI
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egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

Marking : FF

D

D

R
R

1.6 0.60.6

12

0.40.95

2.8

0.05

1 : Drain1

0.2

0.9

0.7

0.4

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %16.54–A

PD

Mounted on a ceramic board (600mm2×0.8mm) 1unit

nimpytxam

I

V,Am1=

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=14.2V

D

Am007=2.17.1S

D
V,Am007=

V01=032003mΩ

SG

V,Am004=

V4=053094mΩ

SG

SSD
SSG

)no(SD
)no(SD

SSD)RB(

D

V
V
V

)ffo(SG

1I

D

2I

D

SD
SG
SD

2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5

sgnitaR
lennahc-Nlennahc-P
0303–V

02±02±V

4.11–A

sgnitaR

Continued on next page.

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9.0W

˚C
˚C

tinU

30300TS (KOTO) No.6451-1/6

CPH5606

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

]lennahc-P[

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

r

f

DS

SSD
SSG

R
R

r

f

DS

)no(d

)ffo(d

SSD)RB(

)ffo(SG

1I

)no(SD

2I

)no(SD

)no(d

)ffo(d

SD
SD
SD

I

S

I

D

V

SD

V

SG

V

SD

D
D

SD
SD
SD

I

S

zHM1=f,V01=09Fp
zHM1=f,V01=05Fp
zHM1=f,V01=22Fp

tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS81sn
tiucriCtseTdeificepseeS8sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,A4.1=

SG

V,Am1–=

V,V03–=
V,V61±=
I,V01–=

D
D

V,Am005–=
V,Am003–=

V,A1–=

SG

D

0=29.02.1V

0=–03V

SG

0=–01Aµ

SG

0=01±Aµ

SD

Am1–=–0.1–5.2V

Am005–=6.09.0S
V01–=063074mΩ

SG

V4–=096079mΩ

SG

zHM1=f,V01–=58Fp
zHM1=f,V01–=55Fp
zHM1=f,V01–=31Fp

tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS41sn
tiucriCtseTdeificepseeS63sn
tiucriCtseTdeificepseeS42sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

0=–9.0–5.1V

sgnitaR

nimpytxam

A4.1=5Cn
A4.1=1Cn
A4.1=1Cn

A1–=4Cn

D

A1–=1Cn

D

A1–=1Cn

D

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Electrical Connection

G1

D1

S

D2

[N-channel]

V

IN

10V

0V

V

IN

PW=10µs
D.C.≤1%

P.G

G

50Ω

G2

Top view

VDD=15V

D

S

ID=700mA
RL=21.4Ω

V

OUT

Switching Time Test CircuitSwitching Time Test Circuit

[P-channel]

--10V

PW=10µs
D.C.≤1%

P.G

0V

V

IN

V

IN

VDD=--15V

ID=--500mA
RL=30Ω

D

V

OUT

G

50Ω

S

No.6451-2/6

2.0

1.8

1.6

1.4

–A

1.2

D

1.0

0.8

0.6

Drain Current, I

0.4

0.2

4.0

3.5

3.0

–A

2.5

D

2.0

0

0

VDS=10V

I

-- V

D

DS

6.0V

4.0V

8.0V

10.0V

0.2

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Drain-to-Source Voltage, VDS–V

I

-- V

D

GS

°C

Ta=--25

°C

75

[Nch]

3.5V

3.0V

VGS=2.5V

IT01096

[Nch]

25°C

CPH5606

--1.6

--1.4

--1.2

–A

--1.0

D

--0.8

--0.6

Drain Current, I

--0.4

--0.2

--3.0

--2.5

--2.0

–A

D

--1.5

0

0

VDS=--10V

I

-- V

--0.2

D

--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9

--10.0V

DS

--8.0V

--6.0V

Drain-to-Source Voltage, VDS–V

I

-- V

D

GS

Ta=--25

75°C

[Pch]

--4.0V

--3.5V

--3.0V

VGS=--2.5V

IT01085

[Pch]

°C

25°C

1.5

Drain Current, I

1.0

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5.54.0 4.5 5.0

Gate-to-Source Voltage, VGS–V

800

700

–mΩ

600

500

DS(on)

400mA

400

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

04812

RDS(on) -- V

ID=700mA

Gate-to-Source Voltage, V

600

500

–mΩ

400

DS(on)

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

- -60

--40 --20 0 20 40 60 80 100 120 160140

RDS(on) -- Ta

GS

=400mA, V

I

D

=700mA, V

I

D

Ambient Temperature, Ta – ˚C

GS

GS

=4V

=10V

GS

16 202 6 10 14 18

–V

IT01097

[Nch]

Ta=25°C

IT01098

[Nch]

IT01099

--1.0

Drain Current, I

--0.5

0

0 --1 --2 --3 --4 --5 --6

Gate-to-Source Voltage, VGS–V

1000

900

800

–mΩ

700

600

DS(on)

Static Drain-to-Source

On-State Resistance, R

--300mA

500

400

300

200

100

0

0 --2 --4 --6 --8 --10 --12

ID=--500mA

RDS(on) -- V

GS

Gate-to-Source Voltage, VGS–V

1200
1100
1000

–mΩ

900
800
700

DS(on)

600
500
400
300
200

Static Drain-to-Source

On-State Resistance, R

100

0

--40 --20 0 20 40 60 80 100 120 160140

- -60

RDS(on) -- Ta

GS

=- -300mA, V

I

D

=- -500mA, V

I

D

GS

=- -4V

Ambient Temperature, Ta – ˚C

IT01086

[Pch]

Ta=25°C

--14 --16 --18 --20

IT01087

[Pch]

=- -10V

IT01088

No.6451-3/6

10

7
5

fs|– S

y

3
2

1.0
7
5

3
2

Forward Transfer Admittance, |

0.1

23 57

0.01

yfs -- I

Ta=--25

75°C

23 57 23 57

0.1

D

°C

25°C

1.0

Drain Current, ID–A

I

-- V

F

10

7
5

3
2

–A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Ta=75

SD

°C

25°C

--25°C

Diode Forward Voltage, VSD–V

100

7
5

3
2

SW Time -- I

VDD=15V
VGS=10V

td(off)

D

t

r

[Nch]

VDS=10V

IT01100

[Nch]

V

= 0

GS

IT01101

[Nch]

CPH5606

10

10

7
5

3

fs|– S

2

y

1.0
7
5

3
2

0.1
7

5
3

2

Forward Transfer Admittance, |

0.01

--0.01

23 57

yfs -- I

Ta=--25

75°C

23 57 23 57

--0 .1

D

°C

25°C

--1 .0

Drain Current, ID–A

I

-- V

F

25°C

SD

°C

--25

--1 0
7
5

3
2

–A

--1 .0

F

7
5

3
2

--0 .1
7

Forward Current, I

5
3

2

--0.01
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4

Ta=75°C

Diode Forward Voltage, VSD–V

100

SW Time -- I

7
5

3
2

t

(off)

d

t

f

D

t

r

[Pch]

VDS=--10V

IT01089

[Pch]

V

= 0

GS

IT01090

[Pch]

VDD=--15V
VGS=--10V

--1 0

Switching Time, SW Time – ns

1000

Ciss, Coss, Crss -- pF

10

1.0

100

t

7
5

3
2

0.1

7
5

3
2

f

td(on)

23 57 23 57

Drain Current, ID–A

Ciss, Coss, Crss -- V

1.0

DS

IT01102

[Nch]

f=1MHz

10

Ciss

7
5

3
2

10

0

5

10

Drain-to-Source Voltage, V

Coss

Crss

DS

–V

3015 20 25

IT01103

10

7
5

3

Switching Time, SW Time – ns

2

1.0
57

1000

7
5

3
2

100

7
5

3
2

10

7

Ciss, Coss, Crss -- pF

5
3

2

1.0
0--5

td(on)

23 57 23 57

--0 .1

--1 .0

Drain Current, ID–A

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

--1 0

Drain-to-Source Voltage, V

DS

DS

–V

--1 0

IT01091

[Pch]

f=1MHz

--3 0--15 --20 --25

IT01092

No.6451-4/6

CPH5606

VGS -- Qg

V
–

GS

Gate-to-Source Voltage, V

10

VDS=10V

9

ID=1.4A

8

7

6

5

4
3

2

1
0

0

Total Gate Charge, Qg – nC

10

I

=5.6A

7

DP

5
3

2

I

=1.4A

D

1.0

–A

7

D

,I

5
3

2

Operation in this
area is limited by R

0.1
7

Drain Current

5

Ta=25

°C

3

Single pulse

2

1 unit

Mounted on a ceramic board (600mm

0.01
23 57 23 57 23 57

0.1 1.0 10 100

A S O

DC operation

(on).

DS

100ms

10m

s

2

×0.8mm)

100µs

1ms

Drain-to-Source Voltage, VDS–V

P

1.2

D

-- Ta

[Nch, Pch Common]

[Nch]

IT01104

[Nch]

IT01105

--10

VDS=--10V

--9

ID=--1A

V

--8

–

--7

GS

--6

--5

--4

--3

--2

Gate-to-Source Voltage, V

--1

5.03.0 4.01.0 2.0 4.52.5 3.50.5 1.5

0

0

VGS -- Qg

3.0 4.01.0 2.0 2.5 3.50.5 1.5

Total Gate Charge, Qg – nC

--10
7

I

=--4A

DP

5
3

2

I

=--1A

--1.0

–A

D

,I

--0.1

Drain Current

--0.01

D

7
5

3
2

Operation in this
area is limited by R

7
5

Ta=25

°C

3

Single pulse

2

1 unit

Mounted on a ceramic board (600mm

23 57 23 57 23 57

--0.1

A S O

100

1ms

10ms

100ms

DC operation

(on).

DS

2

×0.8mm)

--1.0 --10 --100

Drain-to-Source Voltage, VDS–V

[Pch]

IT01093

[Pch]

µs

IT01094

1.0

–W

D

0.9

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0020 40

Mounted on a ceramic board (600mm

2

×0.8mm) 1 unit

60

80 100 120

Ambient Temperature, Ta – ˚C

140 160

IT01095

No.6451-5/6

CPH5606

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6451-6/6