SANYO CPH5605 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel and P-Channel Silicon MOSFETs

Ultrahigh-Speed Switching Applications

Ordering number:ENN6441

CPH5605

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· The CPH5605 incorporates an N-channel MOSFET
and a P-channel MOSFET that feature low ON
resistance and high-speed switching, thereby en­abling high-density mounting.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

SSD
SSG

D

PD

D

Package Dimensions

unit:mm

2168

345

0.40.95

0.4

[CPH5605]

2.8

1.6 0.60.6

0.2

0.9

0.7

0.15

0.2

0.05

1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5

sgnitaR
lennahc-Nlennahc-P
0202–V

01±01±V

4.11–A

9.0W

˚C
˚C

2.9

12

WP ≤ elcycytud,sµ01 ≤ %16.54–A

Mounted on a ceramic board (600mm2×0.8mm) 1unit

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Electrical Characteristics at Ta = 25˚C

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ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

)no(SD
)no(SD

I

SSD)RB(

D

V
V
V

)ffo(SG

1I

D

2I

D

V,Am1=

0=02V

SG

V,V02=

SD
SG
SD

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

Am007=8.15.2S

D
V,Am007=

V4=002062mΩ

SG

V,Am004=

V5.2=062063mΩ

SG

Marking : FE

30300TS (KOTO) TA-2490 No.6441-1/6

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Continued on next page.

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CPH5605

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

]lennahc-P[

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ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

r

f

DS

SSD
SSG

R
R

r

f

DS

)no(d

)ffo(d

SSD)RB(

)ffo(SG

1I

)no(SD

2I

)no(SD

)no(d

)ffo(d

SD
SD
SD

I

S

I

D

V

SD

V

SG

V

SD

D
D

SD
SD
SD

I

S

zHM1=f,V01=09Fp
zHM1=f,V01=06Fp
zHM1=f,V01=82Fp

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,A4.1=

SG

V,Am1–=

V,V02–=

V,V8±=

I,V01–=

D
D

V,Am005–=
V,Am003–=

V,A0.1–=

D

0=9.02.1V

0=–02V

SG

0=–01Aµ

SG

0=01±Aµ

SD

Am1–=–4.0–4.1V

Am005–=0.14.1S

V4–=024055mΩ

SG

V5.2–=036098mΩ

SG

zHM1=f,V01–=001Fp
zHM1=f,V01–=06Fp
zHM1=f,V01–=52Fp

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS52sn
tiucriCtseTdeificepseeS72sn
tiucriCtseTdeificepseeS23sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

0=–9.0–5.1V

SG

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A4.1=6Cn
A4.1=1Cn
A4.1=2Cn

A0.1–=5Cn

D

A0.1–=1Cn

D

A0.1–=1Cn

D

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Electrical Connection

G1

S

D2D1

(Top view)

[N-channel]

V

IN
4V
0V

V

IN

PW=10µs
D.C.≤1%

P.G

G

50Ω

G2

VDD=10V

D

S

ID=700mA
RL=14.3Ω

V

OUT

Switching Time Test CircuitSwitching Time Test Circuit

[P-channel]

PW=10µs
D.C.≤1%

P.G

0V

--4V

V

IN

V

IN

VDD=--10V

ID=--500mA
RL=20Ω

D

V

OUT

G

50Ω

S

No.6441-2/6