![](/html/ae/ae50/ae50a705e5a07ca7cdbbdac8d8f02989a3432017406b0887d312a71a71a65e0b/bg1.png)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel and P-Channel Silicon MOSFETs
Ultrahigh-Speed Switching Applications
Ordering number:ENN6441
CPH5605
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· The CPH5605 incorporates an N-channel MOSFET
and a P-channel MOSFET that feature low ON
resistance and high-speed switching, thereby enabling high-density mounting.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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)eslup(tnerruCniarDI
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erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
SSD
SSG
D
PD
D
Package Dimensions
unit:mm
2168
345
0.40.95
0.4
[CPH5605]
2.8
1.6 0.60.6
0.2
0.9
0.7
0.15
0.2
0.05
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
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lennahc-Nlennahc-P
0202–V
01±01±V
4.11–A
9.0W
˚C
˚C
2.9
12
WP ≤ elcycytud,sµ01 ≤ %16.54–A
Mounted on a ceramic board (600mm2×0.8mm) 1unit
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Electrical Characteristics at Ta = 25˚C
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ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)no(SD
)no(SD
I
SSD)RB(
D
V
V
V
)ffo(SG
1I
D
2I
D
V,Am1=
0=02V
SG
V,V02=
SD
SG
SD
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=4.03.1V
D
Am007=8.15.2S
D
V,Am007=
V4=002062mΩ
SG
V,Am004=
V5.2=062063mΩ
SG
Marking : FE
30300TS (KOTO) TA-2490 No.6441-1/6
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Continued on next page.
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CPH5605
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
]lennahc-P[
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ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SSD
SSG
R
R
r
f
DS
)no(d
)ffo(d
SSD)RB(
)ffo(SG
1I
)no(SD
2I
)no(SD
)no(d
)ffo(d
SD
SD
SD
I
S
I
D
V
SD
V
SG
V
SD
D
D
SD
SD
SD
I
S
zHM1=f,V01=09Fp
zHM1=f,V01=06Fp
zHM1=f,V01=82Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,A4.1=
SG
V,Am1–=
V,V02–=
V,V8±=
I,V01–=
D
D
V,Am005–=
V,Am003–=
V,A0.1–=
D
0=9.02.1V
0=–02V
SG
0=–01Aµ
SG
0=01±Aµ
SD
Am1–=–4.0–4.1V
Am005–=0.14.1S
V4–=024055mΩ
SG
V5.2–=036098mΩ
SG
zHM1=f,V01–=001Fp
zHM1=f,V01–=06Fp
zHM1=f,V01–=52Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS52sn
tiucriCtseTdeificepseeS72sn
tiucriCtseTdeificepseeS23sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=–9.0–5.1V
SG
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A4.1=6Cn
A4.1=1Cn
A4.1=2Cn
A0.1–=5Cn
D
A0.1–=1Cn
D
A0.1–=1Cn
D
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Electrical Connection
G1
S
D2D1
(Top view)
[N-channel]
V
IN
4V
0V
V
IN
PW=10µs
D.C.≤1%
P.G
G
50Ω
G2
VDD=10V
D
S
ID=700mA
RL=14.3Ω
V
OUT
Switching Time Test CircuitSwitching Time Test Circuit
[P-channel]
PW=10µs
D.C.≤1%
P.G
0V
--4V
V
IN
V
IN
VDD=--10V
ID=--500mA
RL=20Ω
D
V
OUT
G
50Ω
S
No.6441-2/6