SANYO CPH5603 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6388
CPH5603
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
· Composite type with 2 MOSFETs contained in a
single package, facilitaing high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : FC
SSD
SSG
D
PD
D
SSD
SSG
R
)no(SD
R
)no(SD
Package Dimensions
unit:mm
2168
345
0.40.95
0.4
[CPH5603]
2.8
1.6 0.60.6
0.2
0.9
0.7
0.15
0.2
0.05
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
sgnitaR
nimpytxam
Continued on next page.
03–V
02±V
0.1–A
9.0W
2.9
12
WP ≤ elcycytud,sµ01 ≤ %10.4–A
Mounted on a ceramic board (600mm2×0.8mm) 1unit
I
SSD)RB(
D
V
V
V
)ffo(SG
1I
D
2I
D
V,Am1–=
0=–03V
SG
V,V03–=
SD
SG
SD
SD
SD
SD
0=–01Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01–=
Am1–=–0.1–5.2V
D
D
V,Am005–=
V,Am003–=
Am005–=6.09.0S
V01–=063074mΩ
SG
V4–=096079mΩ
SG
zHM1=f,V01–=58Fp
zHM1=f,V01–=55Fp
zHM1=f,V01–=31Fp
˚C
˚C
tinU
30100TS (KOTO) TA-2662 No.6388-1/4
CPH5603
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
I
DS
S
V,A0.1–=
SG
tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS41sn
tiucriCtseTdeificepseeS63sn
tiucriCtseTdeificepseeS42sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=–9.0–5.1V
nimpytxam
A0.1–=4Cn
D
A0.1–=1Cn
D
A0.1–=1Cn
D
sgnitaR
tinU
Electrical Connection
G1
--1.6
--1.4
--1.2
–A
--1.0
D
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0
1000
900
800
–mΩ
700
600
DS(on)
500
ID=--300mA
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
0 --2 --4 --6 --8 --10 --12
S
--0.2
Drain-to-Source Voltage, VDS–V
RDS(on) -- V
Gate-to-Source Voltage, V
G2
D
-- V
--10.0V
(Top view)
DS
--6.0V
D2D1
I
--8.0V
VGS=--2.5V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
GS
--500mA
--14 --16 --18 --20
–V
GS
--4.0V
--3.5V
--3.0V
IT01085
Ta=25°C
IT01087
Switching Time Test Circuit
V
IN
0V
--10V
PW=10µs
D.C.≤1%
P.G
--3.0
VDS=--10V
--2.5
--2.0
–A
D
--1.5
--1.0
Drain Current, I
--0.5
0
0 --1 --2 --3 --4 --5 --6
1200
1100
1000
–mΩ
900
800
700
DS(on)
600
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
- -60
V
IN
G
50Ω
I
Gate-to-Source Voltage, VGS–V
RDS(on) -- Ta
=- -300mA, V
I
D
I
D
--40 --20 0 20 40 60 80 100 120 160140
Ambient Temperature, Ta – °C
VDD=--15V
ID=--500mA
RL=30Ω
D
CPH5603
S
-- V
D
GS
=- -500mA, V
GS
V
=- -4V
GS
OUT
Ta=--25
=- -10V
°C
25°C
75°C
IT01086
IT01088
No.6388-2/4
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