SANYO CPH5602 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6368
CPH5602
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
· Composite type with 2 MOSFETs contained in a
single package, facilitaing high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : FB
SSD
SSG
D
PD
D
SSD
SSG
R
)no(SD
R
)no(SD
Package Dimensions
unit:mm
2168
345
0.40.95
0.4
[CPH5602]
2.8
1.6 0.60.6
0.2
0.9
0.7
0.15
0.2
0.05
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
sgnitaR
nimpytxam
Continued on next page.
02V
01±V
4.1A
9.0W
2.9
12
WP ≤ elcycytud,sµ01 ≤ %16.5A
Mounted on a ceramic board (600mm2×0.8mm) 1unit
I
V,Am1=
SSD)RB(
D
V
V
V
)ffo(SG
1I
D
2I
D
SD
SG
SD
SD
SD
SD
0=02V
SG
V,V02=
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=4.03.1V
D
Am007=8.15.2S
D
V,Am007=
V4=002062mΩ
SG
V,Am004=
V5.2=062063mΩ
SG
zHM1=f,V01=09Fp
zHM1=f,V01=06Fp
zHM1=f,V01=82Fp
˚C
˚C
tinU
31000TS (KOTO) TA-2488 No.6368-1/4
CPH5602
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
SG
SG
I
DS
S
SG
V,A4.1=
0=9.02.1V
SG
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn
I,V01=
D
I,V01=
D
I,V01=
D
sgnitaR
nimpytxam
A4.1=6Cn
A4.1=1Cn
A4.1=2Cn
tinU
Electrical Connection
G1
2.0
1.8
1.6
1.4
–A
1.2
D
1.0
0.8
0.6
Drain Current, I
0.4
0.2
0
0
500
450
400
–mΩ
350
300
DS(on)
ID=400mA
250
200
150
100
Static Drain-to-Source
On-State Resistance, R
50
0
01 23456
S
8.0V
6.0V
10.0V
0.2
Drain-to-Source Voltage, VDS–V
RDS(on) -- V
700mA
Gate-to-Source Voltage, V
G2
D2D1
I
-- V
D
4.0V
3.0V
DS
2.5V
2.0V
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
GS
78910
–V
GS
VGS=1.5V
IT01074
Ta=25°C
IT01076
Switching Time Test Circuit
V
IN
4V
0V
V
IN
PW=10µs
D.C.≤1%
P.G
4.0
VDS=10V
3.5
3.0
–A
2.5
D
2.0
1.5
Drain Current, I
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
400
350
–mΩ
300
250
DS(on)
200
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
- -60
--40 --20 0 20 40 60 80 100 120 160140
G
50Ω
I
Gate-to-Source Voltage, VGS–V
RDS(on) -- Ta
=400mA, V
I
D
I
D
Ambient Temperature, Ta – ˚C
VDD=10V
ID=700mA
RL=14.3Ω
D
S
-- V
D
=700mA, V
GS
GS
CPH5602
°C
Ta=--25
75°C
=2.5V
=4.0V
GS
V
OUT
25°C
IT01075
IT01077
No.6368-2/4
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