Page 1
Ordering number : ENN7170
CPH5508
NPN Epitaxial Planar Silicon Transistor
CPH5508
High-Current Switching Applications
Applications
•
Inverters, Relay drivers, Lamp drivers, Motor drivers,
Strobes.
Features
•
Composite type with 2 NPN transistors in one
package facilitating high-density mounting.
•
The CPH5508 is composed of 2 CPH3216 equivaient
Package Dimensions
unit : mm
2162
345
[CPH5508]
2.8
1.6 0.60.6
2.9
0.15
0.2
0.05
chips .
•
Ultrasmall package facilitates miniaturization
in end products (mounting height : 0.9mm).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Total Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CES
CEO
EBO
C
CP
B
C
T
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
Mounted on a ceramic board (600mm2✕0.8mm) 1.2 W
12
0.40.95
0.2
0.7
0.4
1 : Collector(TR1)
2 : Collector(TR2)
3 : Base(TR2)
0.9
4 : Emitter Common
5 : Base(TR1)
SANYO : CPH5
100 V
100 V
50 V
5V
1A
3A
200 mA
0.9 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V , f=1MHz 6 pF
Note : The specifications shown above are for each individual transistor. Continued on next page.
Marking : EH
CBO
EBO
FE
VCB=40V, IE=0 0.1 µA
VEB=4V, IC=0 0.1 µA
VCE=2V, IC=100mA 200 560
VCE=10V , IC=300mA 420 MHz
T
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3493
No.7170-1/4
Page 2
CPH5508
Continued from preceding page.
Parameter Symbol Conditions
Collector-to-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=10mA 130 190 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=10mA 0.81 1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
(BR)CBOIC
(BR)CESIC
(BR)CEOIC
(BR)EBOIE
on
stg
f
=10µA, IE=0 100 V
=100µA, RBE=0 100 V
=1mA, RBE=∞ 50 V
=10µA, IC=0 6 V
See specified Test Circuit. 35 ns
See specified Test Circuit. 330 ns
See specified Test Circuit. 40 ns
min typ max
Switching Time Test Circuit Electrical Connection
PW=20µs
D.C.≤1%
I
B1
I
B2
OUTPUT
B1 EC B2
Ratings
Unit
INPUT
50Ω
V
R
R
B
+
100µF 470µF
+
VCC=25VVBE= --5V
IC=20IB1= --20IB2=500mA
I
-- V
1000
40mA
800
C
30mA
20mA
-- mA
C
600
400
Collector Current, I
200
50mA
0
0 0.2 0.4 0.6 0.8 1.0
CE
10mA
8mA
6mA
4mA
2mA
Collector-to-Emitter Voltage, VCE -- V
1000
7
5
Ta=75°C
3
FE
DC Current Gain, h
100
--25°C
2
7
5
3
2
10
0.01
23 57
FE
25°C
0.1
C
23 57
h
-- I
Collector Current, IC -- A
R
VCE=2V
1.0
L
IB=0
IT01644
23
IT01648
C1 C2
I
-- V
C
Ta=75°C
BE
25°C
--25°C
1.0
0.9
0.8
0.7
-- A
C
0.6
0.5
0.4
0.3
Collector Current, I
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter V oltage, VBE -- V
f
-- I
T
5
3
2
1000
-- MHz
T
7
5
3
2
100
7
5
Gain-Bandwidth Product, f
3
2
23 57
0.10.01
C
23 357
Collector Current, IC -- A
VCE=2V
IT01646
VCE=10V
1.0
IT01650
No.7170-2/4
2
Page 3
Output Capacitance, Cob -- pF
100
1.0
CPH5508
Cob -- V
7
5
3
2
10
7
5
3
2
7
23 557
0.1
1.0
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- I
7
5
CB
f=1MHz
23 571023 57
IT01652
C
IC / IB=50
100
1.0
7
5
3
(sat) -- V
2
CE
0.1
7
5
3
Collector-to-Emitter
Saturation V oltage, V
2
0.01
0.01
10
7
5
23 57
VCE(sat) -- I
Ta=75°C
--25°C
0.1
C
25°C
23 57
Collector Current, IC -- A
VBE(sat) -- I
C
IC / IB=20
1.0
IT01654
IC / IB=50
3
(sat) -- V
2
CE
0.1
7
5
3
Collector-to-Emitter
Saturation V oltage, V
2
0.01
0.01
23 57
--25°C
Ta=75°C
0.1
25°C
23 57
Collector Current, IC -- A
5
ICP=3A
3
2
IC=1A
1.0
7
-- A
C
5
3
2
0.1
7
5
Collector Current, I
3
Ta=25°C
2
Single pulse
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
0.01
23 57 23 57 23 57
0.1
A S O
1ms
100ms
DC operation
1.0 10
Collector-to-Emitter Voltage, VCE -- V
1.0
0.9
0.8
0.7
(TR2) -- W
C
0.6
0.5
0.4
0.3
0.2
Collector Dissipation, P
0.1
Mounted on a ceramic board (600mm2✕0.8mm)
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
PC(TR2) -- PC(TR1)
Collector Dissipation, PC(TR1) -- W
10ms
100µs
500µs
50µs
IT01656
10µs
IT04223
IT02365
1.0
3
(sat) -- V
2
BE
1.0
Base-to-Emitter
Saturation V oltage, V
0.1
7
5
3
2
Ta= --25°C
75°C
23 57
25°C
0.10.01
23 57
Collector Current, IC -- A
1.4
1.2
1.0
-- W
C
0.9
0.8
0.6
0.4
Collector Dissipation, P
0.2
Mounted on a ceramic board (600mm
0
0 20 40 60 80 100 120 140 160
P
Total dissipation
C
1unit
--
Ta
2
✕0.8mm)
Ambient Temperature, Ta -- °C
1.0
IT01658
IT02364
No.7170-3/4
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CPH5508
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.
No.7170-4/4
PS
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