Sanyo CPH5506 Specifications

Ordering number : ENN6590

CPH5506

PNP/NPN Epitaxial Planar Silicon Transistors

CPH5506

DC / DC Converter Applications

Applications

• Relay drivers, Lamp drivers, Motor drivers.

Features

•Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting.

•The CPH5506 consists of two chips encapsulated in a package which are equivalent to the CPH3115 and the CPH3215, respectively.

•Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height)

Specifications

( ):PNP

Absolute Maximum Ratings at Ta=25°C

Package Dimensions

unit : mm

2186

[CPH5506]

2.9

5 4 3

0.6
1.6	2.8
0.6

12

0.950.4

0.2
0.7	0.9

0.4

0.15	0.2
	0.05

1 : Collector(NPN TR)

2 : Collector(PNP TR)

3 : Base(PNP TR)

4 : Common Emitter

5 : Base(NPN TR)

SANYO : CPH5

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		(--30)40	V
Collector-to-Emitter Voltage	VCEO		(--)30	V
Emitter-to-Base Voltage	VEBO		(--)5	V
Collector Current	IC		(--)1.5	A
Collector Current (Pulse)	ICP		(--)5	A
Base Current	IB		(--)300	mA
Collector Dissipation	PC	Mounted on a ceramic board (600mm2 0.8mm)	0.9	W
Total Dissipation	PT	Mounted on a ceramic board (600mm2 0.8mm)	1.2	W
Junction Temperature	Tj		150	°C
Storage Temperature	Tstg		--55 to +150	°C

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71400 TS IM TA-2880 No.6590-1/5

CPH5506

Electrical Characteristics at Ta=25°C

Parameter	Symbol	Conditions		Rathings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=(--)30V, IE=0			(--)0.1	mA
Emitter Cutoff Current	IEBO	VEB=(--)4V, IC=0			(--)0.1	mA
DC Current Gain	hFE	VCE=(--)2V, IC=(--)100mA	200		560
Gain Bandwidth Product	fT	VCE=(--)10V, IC=(--)300mA		(450)500		MHz
Output Capacitance	Cob	VCB=(--)10V, f=1MHz		(9)8		pF
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=(--)750mA, IB=(--)15mA		(--250)150	(--375)225	mV
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=(--)750mA, IB=(--)15mA		(--)0.85	(--)1.2	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=(--)10mA, IE=0	(--30)40			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=(--)1mA, RBE=¥	(--)30			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=(--)10mA, IC=0	(--)5			V
Turn-ON Time	ton	See specified Test Circuit		35		ns
Storage Time	tstg	See specified Test Circuit		(115)205		ns
Fall Time	tf	See specified Test Circuit		30		ns
Marking : EF

Switching Time Test Circuit Electrical Connection

PW=20µs	IB1
D.C.≤ 1%	IB2
INPUT	RB
	VR
50Ω	+
	100µF
	VBE= --5V

OUTPUT

RL 16Ω

+

470µF

20IB1= --20IB2=IC=750mA VCC=12V For PNP, the polarity is reversed.

B1 EC B2

C1 C2

Collector Current, IC -- A

Collector Current, IC -- A

--2.0								IC -- VCE															[PNP]
																				--				50mA
--1.8
--1.6																				--				40mA
																				--				30mA
--1.4
																				--				20mA
--1.2
--1.0																--8mA						--		10mA
--0.8																						--		6mA
--0.6																						--		4mA
--0.4																							--	2mA
--0.2
0																								IB=0
0		--0.1 --0.2 --0.3 --0.4 --0.5 --0.6											--0.7				--0.8					--0.9 --1.0
			Collector-to-Emitter Voltage, VCE -- V																				IT01673
--1.6								IC -- VBE															[PNP]
																	VCE= --2V
--1.4
--1.2
--1.0
--0.8
--0.6
										C		C
--0.4										°	°		C
--0.2										Ta=75	25		°
													25
													--
0
0		--0.2			--0.4			--0.6					--0.8				--1.0					--1.2
				Base-to-Emitter Voltage, VBE													-- V						IT01675

	2.0				IC -- VCE					[NPN]
	1.8		40mA			30mA				20mA
A	1.6
			50mA
--	1.4								8mA	10mA
C
I	1.2
Current,										6mA
	1.0									4mA
	0.8
Collector
	0.6									2mA
	0.4
	0.2
	0									IB=0
	0	0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8	0.9	1.0

		Collector-to-Emitter Voltage, VCE -- V IT01674
	1.6			IC -- VBE						[NPN]
									VCE=2V
A	1.4
	1.2
--
C	1.0
I
Current,	0.8
Collector	0.6
					C	C
					°
	0.4				Ta=75	°	C
							--
						25	°
							25
	0.2
	0

0	0.2	0.4	0.6	0.8	1.0	1.2
	Base-to-Emitter Voltage, VBE -- V					IT01676

No.6590-2/5