SANYO CPH5501 Datasheet
Ordering number:ENN6257
PNP Epitaxial Planar Silicon Transistor
CPH5501
DC/DC Converter Applications
Applications
· Relay drivers, motor drivers, strobes.
Features
· Composite type with a PNP transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.
· The CPH5501 consists of two chips which are
equivalent to the 2SA1338 and the CPH3105,
respectively.
· Ultrasmall-sized package permitting applied sets to
be made small and slim (mounting height : 0.9mm).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
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erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
OBC
OEC
OBE
C
PC
B
Mounted on a ceramic board (600mm2×0.8mm)
C
Package Dimensions
unit:mm
2162
345
0.40.95
0.4
[CPH5501]
2.8
1.6 0.60.6
0.2
0.9
0.7
2.9
12
0.15
0.2
0.05
1 : Collector (TR1)
2 : Collector (TR2)
3 : Base (TR2)
4 : Emitter Common
5 : Base (TR1)
SANYO : CPH5
06–V
05–V
5–V
005–Am
008–Am
2.0W
˚C
˚C
05–V
05–V
6–V
3–A
6–A
006–Am
9.0W
˚C
˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13100TS (KOTO) TA-2356 No.6257–1/6
CPH5501
Electrical Characteristics at Ta = 25˚C
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emiTNO-nruTt
emiTegarotSt
emiTllaFt
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tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
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egatloVnoitarutaSrettimE-ot-rotcelloC
egatloVnoitarutaSrettimE-ot-esaBV
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h
V
hEF1VEC=– I,V2C=– Am001
hEF2VEC=– I,V2C=– A3
V
V
VBC=– I,V04
OBC
VBE=– I,V4C0=1.0–Aµ
OBE
VEC=– I,V5C=– Am01
EF
VEC=– I,V01C=– Am05
T
IC=– I,Am001
)tas(EC
IC=– I,Am001
)tas(EB
IC=– I,Aµ01
OBC)RB(
IC=– R,Aµ001
OEC)RB(
IE=– I,Aµ01
OBE)RB(
no
gts
f
VBC=– I,V04
OBC
VBE=– I,V4C0=1–Aµ
OBE
VEC=– I,V01C=– Am005
T
1IC=1–I,AB=– Am05
)tas(EC
2IC=– I,A2B=– Am001
)tas(EC
IC=– I,A2B=– Am00188.0–2.1–V
)tas(EB
IC=– I,Aµ01
OBC)RB(
IC=– R,Am1
OEC)RB(
IE=– I,Aµ01
OBE)RB(
no
gts
f
0=1.0–Aµ
E
=– Am01
B
=– Am018.02.1V
B
0=06–V
E
=∞ 05–V
EB
0=5–V
C
0=1–Aµ
E
0=06–V
E
=∞ 05–V
EB
0=6–V
C
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nimpytxam
001065
002zHM
6.5Fp
51.04.0V
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.tiucriCtseTdeificepseeS004sn
.tiucriCtseTdeificepseeS05sn
002065
04
063zHM
42Fp
001–002–Vm
581–005–Vm
.tiucriCtseTdeificepseeS03sn
.tiucriCtseTdeificepseeS032sn
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tinU
Electrical Connection
ECB1 B2
Tr1 Tr2
C1 C2
Switching Time Test Circuit
[TR1]
I
PW=10µs
D.C.≤1%
INPUT
50Ω
B1
I
B2
R
V
–10IB1=10IB2=IC=–100mA
B
R
++
100µF 470µF
5V
OUTPUT
VCC=–20V
[TR2]
I
PW=20µs
D.C.≤1%
INPUT
R
L
VR10
50Ω
B1
I
B2
R
B
++
100µF 470µF
5V
–10IB1=10IB2=IC=–1A
–25V
OUTPUT
R
L
No.6257–2/6
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