Sanyo CPH3417 Specifications

Page 1
CPH3417
N-Channel Silicon MOSFET
CPH3417
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Package Dimensions
unit : mm
2152A
[CPH3417]
2.9
0.4
3
1.6 0.60.6
1
2
1.9
0.15
2.8
0.2
0.05
1 : Gate 2 : Source
0.9
0.7 0.2
3 : Drain SANYO : CPH3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +125 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% 7.2 A Mounted on a ceramic board (900mm2✕0.8mm) 0.9 W
20 V
±10 V
1.8 A
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS GSS
yfs
RDS(on)1 ID=1A, VGS=4V 160 210 m RDS(on)2 ID=0.5A, VGS=2.5V 200 280 m RDS(on)3 ID=0.1A, VGS=1.8V 280 390 m
=1mA, VGS=0 20 V VDS=20V , VGS=0 1 µA VGS=±8V, VDS=0 ±10 µA
VDS=10V , ID=1A 1.9 2.8 S
min typ max
Marking : KS Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM TA-3356
No.7124-1/4
Page 2
CPH3417
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V , f=1MHz 100 pF Output Capacitance Coss VDS=10V , f=1MHz 22 pF Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit. 5.5 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit. 17 ns Fall Time t Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.8A 4.5 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.8A 0.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.8A 0.4 nC Diode Forward Voltage V
SD
See specified Test Circuit. 18 ns
r
See specified Test Circuit. 8 ns
f
IS=1.8A, VGS=0 0.91 1.2 V
min typ max
Switching Time Test Circuit
Ratings
Unit
4V 0V
PW=10µs D.C.1%
P.G
2.0
1.6
6.0V
-- A D
1.2
10.0V
0.8
Drain Current, I
0.4
0
0
400
350
300
(on) -- m
250
DS
ID=0.5A
200
150
V
4.0V
0.2
IN
V
IN
50
I
D
2.5V
3.0V
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
VDD=10V
D
G
S
-- V
DS
1.5V
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
1.0A
ID=1A RL=10
CPH3417
V
V
OUT
=1.0V
GS
IT02983
Ta=25°C
I
-- V
2.0
VDS=10V
1.8
1.6
1.4
-- A D
1.2
1.0
0.8
0.6
Drain Current, I
0.4
0.2 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
D
Ta=75°C
GS
Ta= --25°C
--25°C
25°C
Gate-to-Source V oltage, VGS -- V
RDS(on) -- Ta
=1.8V
GS
=0.1A, V
I
D
GS
=0.5A, V
I
D
I
D
=1.0A, V
GS
=2.5V
=4.0V
(on) -- m
DS
400
350
300
250
200
150
75°C
25°C
IT02984
100
50
Static Drain-to-Source
On-State Resistance, R
0
0246810
Gate-to-Source V oltage, VGS -- V
IT02985
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03880
No.7124-2/4
Page 3
fs -- S
y
Forward Transfer Admittance,
1.0
0.1
0.01
100
10
0.001
7 5
3 2
7 5
3 2
7 5
3 2
7 5
3 2
23 57
VDD=10V VGS=4V
yfs -- I
25°C
75°C
Ta= --25°C
23 57
0.01 0.1
Drain Current, I
SW Time -- I
t
(off)
d
D
VDS=10V
23 571023 57
D
-- A
1.0
IT02987
D
r
t
CPH3417
I
-- V
F
Ta=75°C
25°C
SD
--25°C
SD
-- V
DS
10
7 5
3 2
1.0
-- A F
7 5
3 2
0.1 7
Forward Current, I
5 3
2
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward V oltage, V
1000
7 5
3 2
Ciss, Coss, Crss -- V
VGS=0
IT02988
f=1MHz
10
7 5
3
Switching Time, SW Time -- ns
2
1.0
0.1 1.0
23 57 23 5
td(on)
Drain Current, I
10
VDS=10V
9
ID=1.8A
8
-- V
7
GS
6
5
4
3
2
Gate-to-Source V oltage, V
1 0
012345
VGS -- Qg
Total Gate Charge, Qg -- nC
P
1.0
0.9
0.8
-- W D
Mounted on a ceramic board(900mm
D
-- Ta
D
t
f
-- A
IT02989
IT02991
100
7 5
Ciss, Coss, Crss -- pF
3 2
10
02468101214161820
Drain-to-Source V oltage, V
10
7
I
=7.2A
5
DP
3 2
I
=1.8A
D
-- A
1.0 7
D
5 3
2
Operation in this
0.1
area is limited by RDS(on).
7
Drain Current, I
5 3
Ta=25°C
2
Single pulse Mounted on a ceramic board(900mm2✕0.8mm)
0.01 23 57 23 57
Drain-to-Source V oltage, V
Ciss
Coss
Crss
-- V
DS
A S O
<10µs
1ms
10ms
100ms
DC operation
1.00.1 10
DS
-- V
100µs
IT02990
23
IT03881
0.6
0.4
0.2
Allowable Power Dissipation, P
0020 40
2
0.8mm)
60 80 100 120 140 160
Ambient Tamperature, Ta -- °C
IT03879
No.7124-3/4
Page 4
CPH3417
Note on usage : Since the CPH3417 is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice.
No.7124-4/4
PS
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