SANYO CPH3414 Datasheet

Ordering number : ENN6862

CPH3414

N-Channel Silicon MOSFET

CPH3414

Ultrahigh-Speed Switching Applications

Features

• Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Specifications

Package Dimensions

unit : mm

2152A

[CPH3414]

2.9

0.4

3

1.6 0.60.6

1.9

2

0.9

0.7 0.2

1

2.8

0.15

0.2

0.05

1 : Gate
2 : Source
3 : Drain

SANYO : CPH3

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 8.8 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.0 W

30 V

±20 V

2.2 A

Electrical Characteristics at T a=25 °C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Marking : KP Continued on next page.

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1A, VGS=10V 115 150 mΩ
RDS(on)2 ID=0.5A, VGS=4V 190 270 mΩ

=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=1A 1.4 2.0 S

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

13001 TS IM TA-3065

No.6862-1/4

CPH3414

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 120 pF
Output Capacitance Coss VDS=10V , f=1MHz 30 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 17 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=2.2A 3.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=2.2A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=2.2A 0.5 nC
Diode Forward Voltage V

SD

See specified Test Circuit 4 ns

r

See specified Test Circuit 5 ns

f

IS=2.2A, VGS=0 0.9 1.2 V

Switching Time Test Circuit

10V

0V

PW=10µs
D.C.≤1%

V

IN

V

IN

VDD=15V

ID=1A
RL=15Ω

D

G

V

OUT

Ratings

min typ max

Unit

P.G

3.0

2.5

2.0

-- A
D

1.5

1.0

5V

6V

8V

10V

50Ω

ID -- V

4V

DS

S

V

GS

Drain Current, I

0.5

0

0 0.2 0.4 0.6 0.8 1.0

Drain-to-Source V oltage, VDS -- V

400

350

300

(on) -- mΩ

250

DS

200

150

100

50

Static Drain-to-Source

On-State Resistance, R

ID=0.5A

0

012345678910

RDS(on) -- V

1A

GS

Gate-to-Source V oltage, VGS -- V

CPH3414

=3V

-- A
D

3.0

VDS=10V

2.5

2.0

1.5

1.0

ID -- V

GS

Drain Current, I

IT02698

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Gate-to-Source V oltage, VGS -- V

300

RDS(on) -- Ta

Ta=75°C

25°C

Ta=25°C

250

=4V

(on) -- mΩ

200

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

- -60 - -40 --20 0 20 40 60 80 100 120 160140

IT02700 IT02701

I

D

Ambient Temperature, Ta -- °C

=0.5A, V

=1.0A, V

I

D

GS

GS

=10V

- -25°C

IT02699

No.6862-2/4