SANYO CPH3408 Datasheet

Ordering number : ENN6998

CPH3408

N-Channel Silicon MOSFET

CPH3408

Ultrahigh-Speed Switching Applications

Features

•

Low ON-state resistance.

• Ultrahigh-speed switching.

•

4V drive.

Package Dimensions

unit : mm

2152A

[CPH3408]

2.9

0.4

3

1.6 0.60.6

1

2

1.9

2.8

0.15

1 : Gate

0.2

0.05

2 : Source
3 : Drain

0.9

Specifications

0.7 0.2

SANYO : CPH3

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 20 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.2 W

30 V

±20 V

5A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=3A, VGS=10V 33 43 mΩ
RDS(on)2 ID=1A, VGS=4V 48 68 mΩ

=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=3A 4.5 6.5 S

Marking : KH Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62001 TS IM TA-3079

No.6998-1/4

CPH3408

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V, f=1MHz 480 pF
Output Capacitance Coss VDS=10V, f=1MHz 130 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 70 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 36 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=5A 11 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=5A 1.0 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=5A 2.0 nC
Diode Forward Voltage V

SD

See specified Test Circuit 64 ns

r

See specified Test Circuit 45 ns

f

IS=5A, VGS=0 0.8 1.2 V

Switching Time Test Circuit

10V

0V

PW=10µs
D.C.≤1%

V

IN

V

IN

VDD=15V

ID=3A
RL=5Ω

D

G

V

OUT

Ratings

min typ max

Unit

P.G

5.0

4.5

4.0

3.5

-- A
D

3.0

2.5

2.0

1.5

Drain Current, I

1.0

0.5

4.0V

3.0V

6.0V

10.0V

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source V oltage, V

120

100

RDS(on) -- V

I

D

50Ω

-- V

DS

2.5V

DS

GS

S

-- V

CPH3408

=2.0V

V

GS

IT03479

Ta=25°C

I

-- V

-- A

6

VDS=10V

5

4

D

GS

D

3

2

Drain Current, I

1

°C

Ta=75

°C

--25

25°C

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

120

100

Gate-to-Source V oltage, V

RDS(on) -- Ta

GS

-- V

IT03480

80

(on) -- mΩ

DS

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

02468101214161820

ID=1A

3A

Gate-to-Source V oltage, V

GS

-- V

IT03481

80

(on) -- mΩ

DS

=3A, V

GS

GS

=4V

=10V

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

I

D

I

D

=1A, V

Ambient Temperature, Ta -- °C

IT03482

No.6998-2/4