![](/html/23/2367/2367f4053195981309c1ecb9a69afb0f0718df73bec060f66519ad90a43607f2/bg1.png)
Ordering number : ENN6998
CPH3408
N-Channel Silicon MOSFET
CPH3408
Ultrahigh-Speed Switching Applications
Features
•
Low ON-state resistance.
• Ultrahigh-speed switching.
•
4V drive.
Package Dimensions
unit : mm
2152A
[CPH3408]
2.9
0.4
3
1.6 0.60.6
1
2
1.9
2.8
0.15
1 : Gate
0.2
0.05
2 : Source
3 : Drain
0.9
Specifications
0.7 0.2
SANYO : CPH3
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 20 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.2 W
30 V
±20 V
5A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=3A, VGS=10V 33 43 mΩ
RDS(on)2 ID=1A, VGS=4V 48 68 mΩ
=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=10V, ID=3A 4.5 6.5 S
Marking : KH Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62001 TS IM TA-3079
No.6998-1/4
![](/html/23/2367/2367f4053195981309c1ecb9a69afb0f0718df73bec060f66519ad90a43607f2/bg2.png)
CPH3408
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V, f=1MHz 480 pF
Output Capacitance Coss VDS=10V, f=1MHz 130 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 70 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 36 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=5A 11 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=5A 1.0 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=5A 2.0 nC
Diode Forward Voltage V
SD
See specified Test Circuit 64 ns
r
See specified Test Circuit 45 ns
f
IS=5A, VGS=0 0.8 1.2 V
Switching Time Test Circuit
10V
0V
PW=10µs
D.C.≤1%
V
IN
V
IN
VDD=15V
ID=3A
RL=5Ω
D
G
V
OUT
Ratings
min typ max
Unit
P.G
5.0
4.5
4.0
3.5
-- A
D
3.0
2.5
2.0
1.5
Drain Current, I
1.0
0.5
4.0V
3.0V
6.0V
10.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source V oltage, V
120
100
RDS(on) -- V
I
D
50Ω
-- V
DS
2.5V
DS
GS
S
-- V
CPH3408
=2.0V
V
GS
IT03479
Ta=25°C
I
-- V
-- A
6
VDS=10V
5
4
D
GS
D
3
2
Drain Current, I
1
°C
Ta=75
°C
--25
25°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
120
100
Gate-to-Source V oltage, V
RDS(on) -- Ta
GS
-- V
IT03480
80
(on) -- mΩ
DS
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
02468101214161820
ID=1A
3A
Gate-to-Source V oltage, V
GS
-- V
IT03481
80
(on) -- mΩ
DS
=3A, V
GS
GS
=4V
=10V
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
I
D
I
D
=1A, V
Ambient Temperature, Ta -- °C
IT03482
No.6998-2/4