Sanyo CPH3403 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel MOS Silicon FET

Ultrahigh-Speed Switching Applications

Ordering number:EN5985

CPH3403

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

2.9

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : KC

D

D

R
R

Package Dimensions

unit:mm

2152

[CPH3403]

0.4

3

1.6 0.60.6

1

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %18.8A

PD

Mounted on a ceramic board (900mm2×0.8mm)

I

V,Am1=

0=02V

SG

V,V02=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A1=5.26.3S

D

V4=511051mΩ

SG

V5.2=061022mΩ

SG

zHM1=f,V01=071Fp
zHM1=f,V01=09Fp
zHM1=f,V01=34Fp

SSD
SSG

)ffo(SG

1IDV,A1=

)no(SD

2IDV,A5.0=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

2

1.9

0.9

0.7 0.2

0.15

0 to 0.1

2.8

1 : Gate
2 : Source
3 : Drain

SANYO : CPH3

sgnitaR

nimpytxam

Continued on next page.

0.2

02V
21±V

2.2A

0.1W

˚C
˚C

tinU

40599TS (KOTO) TA-1443 No.5985-1/4

CPH3403

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A2.2=

0=0.12.1V

SG

Switching Time Test Circuit

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS63sn
tiucriCtseTdeificepseeS72sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A2.2=5.9Cn
A2.2=1Cn
A2.2=5.1Cn

tinU

G

50Ω

–2.5V

ID-

VDD=10V

D

V

–2.0V

ID=1A
RL=10Ω

S

DS

V

OUT

CPH3403

V

IN

4V
0V

V

–3.0V

–4.0V

IN

PW=10µs
D.C.≤1%

P.G

2.5

–6.0V

2.0

–8.0V

–A

D

1.5

V

GS

1.0

Drain Current, I

0.5

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

D

Ta=–25

°C

75°C

fs|–S

y

10

VDS=10V

7
5

3
2

1.0
7

5

3
2

Forward Transfer Admittance, |

0.1

23 57 23 57 23 5

-0.01

0.1 1.0

Drain Current, ID–A

=–1.5V

°C

25

ID-

V

25

°C

GS

°C

75

°C

Ta=–25

4.5

VDS=–10V

4.0

3.5

3.0

–A

D

2.5

2.0

1.5

Drain Current, I

1.0

0.5

0

0 0.5 1.0 1.5 2.0 2.5

Gate-to-Source Voltage, VGS–V

300

R

DS(on)

-

V

GS

ID=1.0A

250

–mΩ

200

DS(on)

I

=0.5A

D

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

204791356810

Gate-to-Source Voltage, VGS–V

Ta=25°C

No.5985-2/4