Page 1
Ordering number : ENN7122
CPH3318
P-Channel Silicon MOSFET
CPH3318
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2152A
[CPH3318]
2.9
0.4
3
1.6 0.60.6
1
2
1.9
0.15
2.8
0.2
0.05
1 : Gate
2 : Source
0.9
0.7 0.2
3 : Drain
SANYO : CPH3
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --4 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.9 W
--30 V
±20 V
--1 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--500mA, VGS=--10V 420 550 mΩ
RDS(on)2 ID=--300mA, VGS=--4V 720 1000 mΩ
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--500mA 0.57 0.82 S
Marking : JT Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM TA-3355
No.7122-1/4
Page 2
CPH3318
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 75 pF
Output Capacitance Coss VDS=--10V, f=1MHz 16 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 9 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 12 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1A 2.6 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1A 0.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1A 0.5 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 4 ns
r
See specified Test Circuit. 4 ns
f
IS=--1A, VGS=0 --0.89 --1.5 V
Switching Time Test Circuit
G
VDD= --15V
ID= --500mA
RL=30Ω
D
V
OUT
0V
--10V
V
IN
PW=10µs
D.C .≤1%
V
IN
Ratings
min typ max
Unit
P.G
--2.0
--1.5
-- A
D
--1.0
Drain Current, I
--0.5
0
0
--0.2
1400
1200
ID= --0.3A
1000
(on) -- mΩ
DS
800
600
400
50Ω
I
D
--10V
-- V
--6V
CPH3318
S
DS
--5V
--8V
--4V
= --3V
V
GS
--0.4 --0.6 --0.8 --2.0--1.0 --1.2 --1.4 --1.6 --1.8
Drain-to-Source V oltage, V
RDS(on) -- V
DS
GS
-- V
Ta=25°C
--0.5A
IT03310
I
-- V
--1.4
VDS= --10V
--1.2
--1.0
-- A
D
--0.8
--0.6
--0.4
Drain Current, I
--0.2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
D
Gate-to-Source V oltage, V
RDS(on) -- Ta
= --0.3A, V
I
D
= --0.5A, V
I
D
(on) -- mΩ
1200
1000
800
DS
600
400
GS
Ta=75°C
GS
GS
--25°C
25°C
GS
= --4V
= --10V
-- V
IT03311
200
Static Drain-to-Source
On-State Resistance, R
0
--1 --2 --3 --4 --6 --7 --8--5 --9 --10
Gate-to-Source V oltage, V
GS
-- V
IT03312
200
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03313
No.7122-2/4
Page 3
yfs -- I
fs -- S
y
1.0
3
2
7
5
3
2
Ta= --25°C
75
D
25°C
°C
Forward Transfer Admittance,
0.1
100
10
Switching Time, SW Time -- ns
1.0
--10
23 57 2 2357
--0.01 --0.1
Drain Current, I
SW Time -- I
VDD= --15V
7
5
3
2
7
5
3
2
35
VGS= --
10V
t
d
td(on)
--0.1 --1.0
2735723
Drain Current, I
VGS -- Qg
VDS= --10V
(off)
t
f
t
r
D
D
ID= --1.0A
--8
-- V
GS
--6
--4
--2
Gate-to-Source V oltage, V
0
0 0.5 1.0 1.5 2.0 3.02.5
Total Gate Charge, Qg -- nC
P
-- Ta
1.0
0.9
-- W
0.8
D
Mounted on a ceramic board(900mm
D
-- A
D
-- A
VDS= --10V
--1.0
IT03314
IT03316
IT03318
CPH3318
3
I
-- V
F
Ta=75°C
Ciss
SD
25°C
--25°C
-- V
SD
DS
5
3
2
--1.0
-- A
7
F
5
3
2
--0.1
7
5
Forward Current, I
3
2
--0.01
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Diode Forward V oltage, V
100
7
5
3
2
Ciss, Coss, Crss -- V
Coss
Ciss, Coss, Crss -- pF
10
7
5
0 --5 --10 --15 --20 --25 --30
Drain-to-Source V oltage, V
--10
7
I
= --4A
5
DP
3
2
I
= --1A
D
--1.0
-- A
7
D
5
3
2
--0.1
Drain Current, I
--0.01
Operation in this
7
area is limited by RDS(on).
5
3
Ta=25°C
2
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm)
23 57 23 57
--0.1 --1.0 --10
Drain-to-Source V oltage, V
Crss
A S O
DC operation
DS
100ms
DS
-- V
10ms
-- V
1ms
VGS=0
IT03315
f=1MHz
IT03317
<10µs
100µs
532
IT03882
0.6
0.4
0.2
Allowable Power Dissipation, P
0020 40
2
✕0.8mm)
60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03879
No.7122-3/4
Page 4
CPH3318
Note on usage : Since the CPH3318 is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.
No.7122-4/4
PS
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