SANYO CPH3307 Datasheet
Ordering number : ENN6996
CPH3307
P-Channel Silicon MOSFET
CPH3307
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2152A
[CPH3307]
2.9
0.4
3
1.6 0.60.6
1
2
1.9
2.8
0.15
1 : Gate
0.2
0.05
2 : Source
3 : Drain
0.9
0.7 0.2
SANYO : CPH3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --12 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.2 W
--20 V
±10 V
--3 A
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--1.5A, VGS=--4V 70 90 mΩ
RDS(on)2 ID=--1A, VGS=--2.5V 95 130 mΩ
=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --1 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--1.5A 3.5 5 S
Marking : JG Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62001 TS IM TA-3076
No.6996-1/4
CPH3307
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 800 pF
Output Capacitance Coss VDS=--10V, f=1MHz 160 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 100 pF
Turn-ON Delay Time td(on) See specified Test Circuit 14 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 56 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--4V, ID=--3A 7.8 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--4V, ID=--3A 1.7 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--3A 1.9 nC
Diode Forward Voltage V
SD
See specified Test Circuit 50 ns
r
See specified Test Circuit 51 ns
f
IS=--3A, VGS=0 --0.8 --1.5 V
Ratings
min typ max
Switching Time Test Circuit
= --10V
V
DD
V
IN
0V
--4V
PW=10µs
D.C.≤1%
P.G
V
IN
G
50Ω
D
ID= --1.5A
RL=6.67Ω
S
V
OUT
CPH3307
Unit
--3.0
--2.5
--2.0
-- A
D
--1.5
--1.0
--10.0V
Drain Current, I
--0.5
0
0
--0.1 --0.2 --0.3 --0.4
160
140
120
(on) -- mΩ
100
DS
ID= --1A
80
60
I
-- V
--4.0V
--2.5V
--3.0V
D
--1.8V
DS
--1.5V
--0.5
--0.6 --0.7 --0.8 --0.9
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
GS
--1.5A
VGS= --1.0V
IT03464
Ta=25°C
--1.0
--6.0
VDS= --10V
--5.5
--5.0
--4.5
--4.0
-- A
D
--3.5
--3.0
--2.5
--2.0
Drain Current, I
--1.5
--1.0
--0.5
0
0
160
140
120
(on) -- mΩ
100
DS
80
60
I
-- V
D
GS
°C
75°C
Ta= --25
°C
Ta=75
--25°C
25°C
--0.5 --1.0 --1.5 --2.0
Gate-to-Source V oltage, VGS -- V
RDS(on) -- Ta
= --2.5V
GS
= --1A, V
I
D
= --1.5A, V
I
D
= --4.0V
GS
25°C
--2.5
IT03465
40
20
Static Drain-to-Source
On-State Resistance, R
0
0
--2 --4 --6 --8
Gate-to-Source V oltage, VGS -- V
IT03466
--10
40
20
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03467
No.6996-2/4
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